Not lost in translation: writing auditorily presented words at study increases correct recognition “at no cost”

© 2016 Taylor & Francis. Previous studies have reported a translation effect in memory, whereby encoding tasks that involve translating between processing domains produce a memory advantage relative to tasks that involve a single domain. We investigated the effects of translation on true and false memories using the Deese/Roediger-McDermott (DRM) procedure [Deese, J. (1959). On the prediction of occurrence of particular verbal intrusions in immediate recall. Journal of Experimental Psychology, 58, 17–22; Roediger, H. L., III, & McDermott, K. B. (1995). Creating false memories: Remembering words not presented in lists. Journal of Experimental Psychology: Learning, Memory, & Cognition, 21, 803–814]. Translation between modalities enhanced correct recognition but had no effect on false recognition. Results are consistent with previous research showing that correct memory can be enhanced “at no cost” in terms of accuracy. Findings are discussed in terms of understanding the relationship between true and false memories produced by the DRM procedure

Thermodynamic properties in polynomial form for carbon, hydrogen, nitrogen, and oxygen systems from 300 to 15000 K

Thermodynamic properties in polynomial form for carbon, hydrogen, nitrogen, and oxygen systems form 300 to 15000

Adaptive false memory: Imagining future scenarios increases false memories in the DRM paradigm

Previous research has shown that rating words for their relevance to a future scenario enhances memory for those words. The current study investigated the effect of future thinking on false memory using the Deese/Roediger–McDermott (DRM) procedure. In Experiment 1, participants rated words from 6 DRM lists for relevance to a past or future event (with or without planning) or in terms of pleasantness. In a surprise recall test, levels of correct recall did not vary between the rating tasks, but the future rating conditions led to significantly higher levels of false recall than the past and pleasantness conditions did. Experiment 2 found that future rating led to higher levels of false recognition than did past and pleasantness ratings but did not affect correct recognition. The effect in false recognition was, however, eliminated when DRM items were presented in random order. Participants in Experiment 3 were presented with both DRM lists and lists of unrelated words. Future rating increased levels of false recognition for DRM lures but did not affect correct recognition for DRM or unrelated lists. The findings are discussed in terms of the view that false memories can be associated with adaptive memory functions

Febrile seizures Familial risk factors, outcome and preventive use of antipyretic drugs

Febrile seizures (FS) occur in early childhood during a febrile illness. A typical or simple FS is characterized by a sudden loss of consciousness with either stiffening and myoclonic jerking or total loss of muscle tone. During a short initial tonic phase of the seizure, the child may stop breathing and tum blue. After a clonic phase of up to approximately 10 minutes of jerking or a phase of mere flacidness, the seizure stops and consciousness is recuperated. The child may then either fail into a deep sleep or be confused and disorientated for some time. Atypical or complex FS are either prolonged (i.e. duration longer than 30 minutes), focal, or occur multiple times within 24 hours. Usually, the febrile illness is one of the viral infectious diseases which are common in young infants. i ,2 Besides the fever) no other cause of the seizure can be found in the history, at physical examination, nor with additional laboratory investigations

Magnetic-field effects in defect-controlled ferromagnetic Ga_{1-x}Mn_xAs semiconductors

We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga_{1-x}Mn_xAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the Tc critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure, with maxima increasing with applied magnetic field, which indicates that application to diluted-magnetic-semiconductor devices would require quality-control of the Mn-doping composition. We also compare various experimental data for Tc(x) and p(x) on different Ga_{1-x}Mn_xAs samples and stress the need of further detailed experimental work to assure that the experimental measurements are reproducible.Comment: RevTeX 4, 3 two-column pages, 4 colour figures; to appear in J Appl Phy

Hole spin polarization in GaAlAs:Mn structures

A self-consistent calculation of the electronic properties of GaAlAs:Mn magnetic semiconductor quantum well structures is performed including the Hartree term and the sp-d exchange interaction with the Mn magnetic moments. The spin polarization density is obtained for several structure configurations. Available experimental results are compared with theory.Comment: 4 page