Michigan resource inventories: Characteristics and costs of selected projects using high altitude color infrared imagery. Remote Sensing Project

The procedures and costs associated with mapping land cover/use and forest resources from high altitude color infrared (CIR) imagery are documented through an evaluation of several inventory efforts. CIR photos (1:36,000) were used to classify the forests of Mason County, Michigan into six species groups, three stocking levels, and three maturity classes at a cost of $4.58/sq. km. The forest data allow the pinpointing of marketable concentrations of selected timber types, and facilitate the establishment of new forest management cooperatives. Land cover/use maps and area tabulations were prepared from small scale CIR photography at a cost of$4.28/sq. km. and $3.03/sq. km. to support regional planning programs of two Michigan agencies. procedures were also developed to facilitate analysis of this data with other natural resource information. Eleven thematic maps were generated from Windsor Township, Michigan at a cost of$1,500 by integrating grid-geocoded land cover/use, soils, topographic, and well log data using an analytical computer program

Guide to aerial imagery of Michigan

There are no author-identified significant results in this report

A computer software system for integration and analysis of grid-based remote sensing data with other natural resource data. Remote Sensing Project

A computer-based information system is described designed to assist in the integration of commonly available spatial data for regional planning and resource analysis. The Resource Analysis Program (RAP) provides a variety of analytical and mapping phases for single factor or multi-factor analyses. The unique analytical and graphic capabilities of RAP are demonstrated with a study conducted in Windsor Township, Eaton County, Michigan. Soil, land cover/use, topographic and geological maps were used as a data base to develope an eleven map portfolio. The major themes of the portfolio are land cover/use, non-point water pollution, waste disposal, and ground water recharge

Improved resource use decisions and actions through remote sensing

Operational uses of remote sensing for improving management decisions and actions concerning resource uses are considered in terms of first generation, or direct-action; and second generation or indirect, delayed-action applications. From among applications completed during 1974-75, seven case studies are offered in illustration of the many contrasts which can be drawn between first and second generation application studies. These include: (1) multi-agency river basin planning; (2) corridor assessment and route location for highway location together with improvement of county-level planning decisions; (3) improving timber management practices; (4) enforcement of new state statutes; (5) county-wide open space preservation; (6) land value reappraisal relative to property tax equalization; and (7) optimizing agri-business processing plant locations

Land use inventory through merging of LANDSAT (satellite), aerial photography and map sources

There are no author-identified significant results in this report

Remote sensing in Michigan for land resource management: Waterfowl habitat management at Pointe Mouillee

For many years the Pointe Mouillee State Game Area, located on the Lake Erie shoreline just south of Detroit, has been a prime waterfowl habitat. The usefulness of the site for this purpose has been impaired because of the gradual deterioration of the marshland and severe flooding and storms during the spring of 1973. Also, it has been proposed that a dredge spoils area be located in or near the marsh. To aid the future management of a diked refuge area of 148 hectares within the State Game Area, a detailed vegetation inventory was prepared by photointerpretation and a generalized vegetation inventory was obtained by processing multispectral scanner imagery. Also, an analysis was conducted to determine the magnitude of past losses of marshland and the possibilities of replacing this lost habitat. The analysis indicated that large additions to waterfowl habitat could be provided by changes in management of vegetation in existing sections of the State Game Area, through acquisition and conversion of adjacent land by the Michigan Department of Natural Resources, and by the proposed construction of a barrier dike offshore of Pointe Mouillee. Altogether, the various measures considered in this report could affect a total area of nearly 13 sq. km

Analysis of doping concentration and composition in wide bandgap AlGaN:Si by wavelength dispersive x-ray spectroscopy

Detailed knowledge of the dopant concentration and composition of wide band gap AlxGa1−xN layers is of crucial importance for the fabrication of ultra violet light emitting diodes. This paper demonstrates the capabilities of wavelength dispersive x-ray (WDX) spectroscopy in accurately determining these parameters and compares the results with those from high resolution x-ray diffraction (HR-XRD) and secondary ion mass spectrometry (SIMS). WDX spectroscopy has been carried out on different silicon-doped wide bandgap AlxGa1−xN samples (x between 0.80 and 1). This study found a linear increase in the Si concentration with the SiH4/group-III ratio, measuring Si concentrations between 3×10 18 cm−3 and 2.8×10 19 cm−3, while no direct correlation between the AlN composition and the Si incorporation ratio was found. Comparison between the composition obtained by WDX and by HR-XRD showed very good agreement in the range investigated, while comparison of the donor concentration between WDX and SIMS found only partial agreement, which we attribute to a number of effects.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeBMBF, 13N12587, Verbundprojekt: Photonische Plattformtechnologie zur ultrasensitiven und hochspezifischen biochemischen Sensorik auf Basis neuartiger UV-LEDs (UltraSens) - Teilvorhaben: Design, Wachstum und Charakterisierung von UV-C-LEDsBMBF, 03ZZ0105B, Zwanzig20 - Advanced UV for Life - Verbundvorhaben - UV-B effizient; TP2: Optimierung der Epitaxiestruktur und Epitaxieprozesse für den aktiven Bereich, LED-Simulation und ChipdesignBMBF, 03ZZ0103, Zwanzig20 - Advanced UV for Life - Ertüchtigung der Prozesskette für UV-LED

Influence of InN and AlN concentration on the compositional inhomogeneity and formation of InN-rich regions in InxAlyGa1−x−yN

The application of quaternary In xAl yGa 1-x- yN active regions is a promising path towards high efficiency UVB-light emitting diodes (LEDs). For the utilization of In xAl yGa 1-x-yN, detailed knowledge of the interplay between growth parameters, adatom incorporation, optical and structural properties is crucial. We investigated the influence of the trimethylaluminium (TMAl) and trimethylindium (TMIn) flux on the composition and luminescence properties of In xAl yGa 1-x-yN layers by multi-mode scanning electron microscopy. We found that varying the molar TMIn flow from 0 to 17.3 μmol min -1 led to an InN concentration between 0% and 3.2% and an emission energy between 4.17 and 3.75 eV. The variation of the molar TMAl flow from 3.5 to 35.4 μmol min -1 resulted in a AlN composition between 7.8% and 30.7% with an emission energy variation between 3.6 and 4.1 eV. Cathodoluminescence hyperspectral imaging provided evidence for the formation of nanoscale InN-rich regions. Analyzing the emission properties of these InN-rich regions showed that their emission energy is inhomogeneous and varies by ≈150 meV. We provide evidence that the formation of these InN-rich regions is highly dependent on the AlN and InN composition of the layer and that their formation will strongly affect the performance of In xAl yGa 1-x-yN LEDs

Citizenship Education and Liberalism: A State of the Debate Analysis 1990–2010

What kind of citizenship education, if any, should schools in liberal societies promote? And what ends is such education supposed to serve? Over the last decades a respectable body of literature has emerged to address these and related issues. In this state of the debate analysis we examine a sample of journal articles dealing with these very issues spanning a twenty-year period with the aim to analyse debate patterns and developments in the research field. We first carry out a qualitative analysis where we design a two-dimensional theoretical framework in order to systematise the various liberal debate positions, and make us able to study their justifications, internal tensions and engagements with other positions. In the ensuing quantitative leg of the study we carry out a quantitative bibliometric analysis where we weigh the importance of specific scholars. We finally discuss possible merits and flaws in the research field, as evidenced in and by the analysis

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

The scanning electron microscopy techniques of electron backscatter diffraction (EBSD), electron channelling contrast imaging (ECCI) and hyperspectral cathodoluminescence imaging (CL) provide complementary information on the structural and luminescence properties of materials rapidly and non-destructively, with a spatial resolution of tens of nanometres. EBSD provides crystal orientation, crystal phase and strain analysis, whilst ECCI is used to determine the planar distribution of extended defects over a large area of a given sample. CL reveals the influence of crystal structure, composition and strain on intrinsic luminescence and/or reveals defect-related luminescence. Dark features are also observed in CL images where carrier recombination at defects is non-radiative. The combination of these techniques is a powerful approach to clarifying the role of crystallography and extended defects on a materials' light emission properties. Here we describe the EBSD, ECCI and CL techniques and illustrate their use for investigating the structural and light emitting properties of UV-emitting nitride semiconductor structures. We discuss our investigations of the type, density and distribution of defects in GaN, AlN and AlGaN thin films and also discuss the determination of the polarity of GaN nanowires