5 research outputs found
Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry
We investigate a wafer scale tunnel junction fabrication method, where a
plasma etched via through a dielectric layer covering bottom Al electrode
defines the tunnel junction area. The ex-situ tunnel barrier is formed by
oxidation of the bottom electrode in the junction area. Room temperature
resistance mapping over a 150 mm wafer give local deviation values of the
tunnel junction resistance that fall below 7.5 % with an average of 1.3 %. The
deviation is further investigated by sub-1 K measurements of a device, which
has one tunnel junction connected to four arrays consisting of N junctions (N =
41, junction diameter 700 nm). The differential conductance is measured in
single-junction and array Coulomb blockade thermometer operation modes. By
fitting the experimental data to the theoretical models we found an upper limit
for the local tunnel junction resistance deviation of ~5 % for the array of
2N+1 junctions. This value is of the same order as the minimum detectable
deviation defined by the accuracy of our experimental setup
Toward full carbon interconnects: High conductivity of individual carbon nanotube to carbon nanotube regrowth junctions
acceptedVersionacceptedVersionPeer reviewe
Ferroelectric Control of Spin Polarization
International audienceThis copy is for your personal, non-commercial use only.. clicking here colleagues, clients, or customers by , you can order high-quality copies for your If you wish to distribute this article to others. here following the guidelines can be obtained by Permission to republish or repurpose articles or portions of articles (this information is current as of February 25, 2010): The following resources related to this article are available online at www.sciencemag.or