The three-dimensional BF Model with Cosmological Term in the Axial Gauge

We quantize the three-dimensional $BF$-model using axial gauge conditions. Exploiting the rich symmetry-structure of the model we show that the Green-functions correspond to tree graphs and can be obtained as the unique solution of the Ward-Identities. Furthermore, we will show that the theory can be uniquely determined by symmetry considerations without the need of an action principle.Comment: one reference added, transmission errors correcte

Two-terminal monolithic InP-based tandem solar cells with tunneling intercell ohmic connections

A monolithic two-terminal InP/InGaAsP tandem solar cell was successfully fabricated. This tandem solar cell consists of a p/n InP homojunction top subcell and a 0.95 eV p/n InGaAsP homojunction bottom subcell. A patterned 0.95 eV n(+)/p(+) InGaAsP tunnel diode was employed as an intercell ohmic connection. The solar cell structure was prepared by two-step liquid phase epitaxial growth. Under one sun, AM1.5 global illumination, the best tandem cell delivered a conversion efficiency of 14.8 pct

An empirical study of the performance of APMOVPE AM0 InP homojunction solar cells as a function of emitter thickness and doping, and base doping

Their excellent radiation resistance and conversion efficiencies greater than 20 percent, measured under global conditions, make InP shallow-homojunction solar cells very attractive for space or terrestrial application. In addition, modeling studies show that, for optimized design, efficiencies of these devices should exceed 20 percent even under AM0 conditions. However, a systematic experimental investigation of the influence of the various cell design parameters on cell performance has not as yet been made. For the n+/p/p+ structures investigated in the previous modeling study, the design parameters include the impurity concentrations and thicknesses of the emitter and base layers. In the work reported here, researchers discuss an experimental investigation of the effects on cell performance of varying the impurity concentrations of the emitter and base and thickness of the emitter

High-efficiency heteroepitaxial InP solar cells

High-efficiency, thin-film InP solar cells grown heteroepitaxially on GaAs and Si single-crystal bulk substrates are being developed as a means of eliminating the problems associated with using single-crystal InP substrates. A novel device structure employing a compositionally graded Ga(x)In(1-x)As layer between the bulk substrate and the InP cell layers is used to reduce the dislocation density and improve the minority carrier properties in the InP. The structures are grown in a continuous sequence of steps using computer-controlled atmospheric pressure metalorganic vapor phase epitaxy (APMOVPE). Dislocation densities as low as 3 x 10(exp 7) sq cm and minority carrier lifetimes as high as 3.3 ns are achieved in the InP layers with this method using both GaAs or Si substrates. Structures prepared in this fashion are also completely free of microcracks. These results represent a substantial improvement in InP layer quality when compared to heteroepitaxial InP prepared using conventional techniques such as thermally cycled growth and post-growth annealing. The present work is is concerned with the fabrication and characterization of high-efficiency, thin-film InP solar cells. Both one-sun and concentrator cells were prepared for device structures grown on GaAs substrates. One-cell cells have efficiencies as high as 13.7 percent at 25 C. However, results for the concentrator cells are emphasized. The concentrator cell performance is characterized as a function of the air mass zero (AM0) solar concentration ratio and operating temperature. From these data, the temperature coefficients of the cell performance parameters are derived as a function of the concentration ratio. Under concentration, the cells exhibit a dramatic increase in efficiency and an improved temperature coefficient of efficiency. At 25 C, a peak conversion efficiency of 18.9 percent is reported. At 80 C, the peak AM0 efficiency is 15.7 percent at 75.6 suns. These are the highest efficiencies yet reported for InP heteroepitaxial cells. Approaches for further improving the cell performance are discussed

InP concentrator solar cells for space applications

The design, fabrication, and characterization of high-performance, n(+)/p InP shallow-homojunction (SHJ) concentrator solar cells is described. The InP device structures were grown by atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). A preliminary assessment of the effects of grid collection distance and emitter sheet resistance on cell performance is presented. At concentration ratios of over 100, cells with AM0 efficiencies in excess of 21 percent at 25 C and 19 percent at 80 C are reported. These results indicate that high-efficiency InP concentrator cells can be fabricated using existing technologies. The performance of these cells as a function of temperature is discussed, and areas for future improvement are outlined

Andreev scattering in the asymmetric ladder with preformed bosonic pairs

We discuss the phase coherence which emanates from the ladder-like proximity effect between a ``weak superconductor'' with preformed bosonic pairs (here, a single-chain Luther-Emery liquid with superconducting correlations that decay approximately as $x^{-1}$) and a Fermi gas with unpaired fermions. Carefully studying tunneling mechanism(s), we show that the boson-mediated Cooper pairing between remaining unpaired electrons results in a quasi long-range superconductivity: Superconducting correlations decay very slowly as $x^{-\eta}$ with $\eta\approx 1/2$. This process is reminiscent of the coupling of fermions to preformed bosonic pairs introduced in the context of high-Tc cuprates.Comment: 5 pages, final version (To appear in PRB Rapid Communication

InP/Ga0.47In0.53As monolithic, two-junction, three-terminal tandem solar cells

The work presented has focussed on increasing the efficiency of InP-based solar cells through the development of a high-performance InP/Ga(0.47)In(0.53)As two-junction, three-terminal monolithic tandem cell. Such a tandem is particularly suited to space applications where a radiation-hard top cell (i.e., InP) is required. Furthermore, the InP/Ga(0.47)In(0.53)As materials system is lattice matched and offers a top cell/bottom cell bandgap differential (0.60 eV at 300 K) suitable for high tandem cell efficiencies under AMO illumination. A three-terminal configuration was chosen since it allows for independent power collection from each subcell in the monolithic stack, thus minimizing the adverse impact of radiation damage on the overall tandem efficiency. Realistic computer modeling calculations predict an efficiency boost of 7 to 11 percent from the Ga(0.47)In(0.53)As bottom cell under AMO illumination (25 C) for concentration ratios in the 1 to 1000 range. Thus, practical AMO efficiencies of 25 to 32 percent appear possible with the InP/Ga(0.47)In(0.53)As tandem cell. Prototype n/p/n InP/Ga(0.47)In(0.53)As monolithic tandem cells were fabricated and tested successfully. Using an aperture to define the illuminated areas, efficiency measurements performed on a non-optimized device under standard global illumination conditions (25 C) with no antireflection coating (ARC) give 12.2 percent for the InP top cell and 3.2 percent for the Ga(0.47)In(0.53)As bottom cell, yielding an overall tandem efficiency of 15.4 percent. With an ARC, the tandem efficiency could reach approximately 22 percent global and approximately 20 percent AMO. Additional details regarding the performance of individual InP and Ga(0.47)In(0.53)As component cells, fabrication and operation of complete tandem cells and methods for improving the tandem cell performance, are also discussed

Incommensurate Magnetism around Vortices and Impurities in High-TcT_c Superconductors

By solving self-consistently an effective Hamiltonian including interactions for both antiferromagnetic spin-density wave (SDW) and d-wave superconducting (DSC) orderings, a comparison study is made for the local magnetic structure around superconducting vortices and unitary impurities. To represent the optimally doped regime of cuprates, the parameter values are chosen such that the DSC is dominant while the SDW is vanishingly small. We show that when vortices are introduced into the superconductor, an oscillating SDW is induced around them. The oscillation period of the SDW is microscopically found, consistent with experiments, to be eight lattice constants ($8a_0$). The associated charge-density wave (CDW) oscillates with a period of one half ($4a_0$) of the SDW. In the case of unitary impurities, we find a SDW modulation with identical periodicity, however without an associated CDW. We propose neutron scattering experiments to test this prediction.Comment: 5 pages, 4 eps figures (color) included in the tex

On the Validity of the Tomonaga Luttinger Liquid Relations for the One-dimensional Holstein Model

For the one-dimensional Holstein model, we show that the relations among the scaling exponents of various correlation functions of the Tomonaga Luttinger liquid (LL), while valid in the thermodynamic limit, are significantly modified by finite size corrections. We obtain analytical expressions for these corrections and find that they decrease very slowly with increasing system size. The interpretation of numerical data on finite size lattices in terms of LL theory must therefore take these corrections into account. As an important example, we re-examine the proposed metallic phase of the zero-temperature, half-filled one-dimensional Holstein model without employing the LL relations. In particular, using quantum Monte Carlo calculations, we study the competition between the singlet pairing and charge ordering. Our results do not support the existence of a dominant singlet pairing state.Comment: 7 page

Superconducting Fluctuations in a Multi-Band 1D Hubbard Model

A renormalization-group and bosonization approach for a multi-band Hubbard Hamiltonian in one dimension is described. Based on the limit of many bands, it is argued that this Hamiltonian with bare repulsive electron-electron interactions is scaled under specific conditions to a model in which superconducting fluctuations dominate.Comment: 12 pages + 1 fig, Revtex, Preprint - Los Alamo