High-speed, low drive-voltage silicon-organic hybrid modulator based on a binary-chromophore electro-optic material

We report on the hybrid integration of silicon-on-insulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid Mach-Zehnder modulators that feature low UpL-products of down to 0.52 Vmm and support data rates of up to 40 Gbit/

Reduced Equalization Needs of 100 GHz Bandwidth Plasmonic Modulators

As bit rates of optical interconnects increase, a large amount of complicated signal conditioning is needed to compensate for the insufficient bandwidth of current modulators. In this paper, we evaluate the reduced equalization requirements of high-bandwidth plasmonic modulators in short-reach transmission experiments. It is shown that transmission of 100 Gbit/s nonreturn-to-zero (NRZ) and 112 Gbit/s pulse-amplitude modulation4 over 1 km and 2 km distance is possible without any receiver equalization. At higher bit-rates, such as 120 Gbit/s NRZ, data transmission is demonstrated over 500 m with reduced receiver equalization requirements. Transmission up to 200 Gbit/s over 1 km is also shown with more complex receiver equalization. The reduced complexity of the receiver digital signal processing is attributed to a flat frequency response of at least 108 GHz of the plasmonic modulators. All single wavelength transmissions have been performed at 1540 nm in standard single mode fiber

40 GBd 16QAM signaling at 160 Gb/s in a silicon-organic hybrid modulator

We demonstrate for the first time generation of 16-state quadrature amplitude modulation (16QAM) signals at a symbol rate of 40 GBd using silicon-based modulators. Our devices exploit silicon-organic hybrid (SOH) integration, which combines silicon-on-insulator slot waveguides with electro-optic cladding materials to realize highly efficient phase shifters. The devices enable 16QAM signaling and quadrature phase shift keying (QPSK) at symbol rates of 40 GBd and 45 GBd, respectively, leading to line rates of up to 160 Gbit/s on a single wavelength and in a single polarization. This is the highest value demonstrated by a silicon-based device up to now. The energy consumption for 16QAM signaling amounts to less than 120 fJ/bit – one order of magnitude below that of conventional silicon photonic 16QAM modulators

Compact and ultra-efficient broadband plasmonic terahertz field detector

ISSN:2041-172

Ultrahigh Electro-Optic Coefficients, High Index of Refraction, and Long-Term Stability from Diels-Alder Cross-Linkable Binary Molecular Glasses

status: publishe