Modeling of low-cost hight-efficiency tandem solar cells based on nitrides of III-V elements

Les nitrures des éléments III-V, ont été largement étudiés en raison de leurs applications dans les diodes électroluminescentes DEL, les diodes laser et les photodétecteurs. L’énergie de la bande interdite « Gap » de ces alliages ternaires ou quaternaires peut être ajustée en fonction de la composition, à des énergies de photons allant de l'infrarouge à l'ultraviolet. Ce gap direct ajustable sur une large gamme, rend ces matériaux très utiles pour les applications photovoltaïques en raison de la possibilité d'inventer non seulement des cellules solaires multi-jonction à haut rendement, mais également les cellules solaires de troisième génération comme les cellules à bandes intermédiaires, reposant uniquement sur les alliages nitrures. En plus de leur grand gap ajustable, les nitrures montrent également d’autres propriétés photovoltaïques intéressantes, comme de faibles masses effectives des porteurs de charge, de fortes mobilités, des coefficients d'absorption élevés ainsi qu’une tolérance aux radiations. La technologie des nitrures III-V a démontré sa capacité à croître des structures cristallines de haute qualité et à fabriquer des dispositifs optoélectroniques, ce qui confirme son potentiel pour le solaire photovoltaïque à très haut rendement. En intégrant ce matériau avec une jonction de silicium cristallin, nous pourrons avoir une cellule multijonction à très haut rendement avec un coût compétitive.Nitrides of III-V elements, have been widely studied because of their interessting applications in the LED light-emitting diodes, laser diodes and photodetectors. The bandgap of such ternary or quaternary alloys can be adjusted depending on the composition, at photon energies ranging from infrared to ultraviolet. This adjustable direct bandgap over a wide range, making these materials valuable for photovoltaic applications due to the possibility of inventing not only multi-junction solar cells at high efficiency, but also third generation solar cells such as cells with intermediate bandgap, based solely on nitrides alloys. In addition to their large adjustable bandgap, nitrides also show other interesting photovoltaic properties, such as low effective masses of the charge carriers, high mobility, high absorption coefficient and a radiation tolerance. The technology of III-V nitrides has demonstrated its ability to grow high quality crystal structures and to manufacture optoelectronic devices, which confirm its potential for photovoltaic solar energy with very high efficiency. By incorporating this material with crystalline silicon junction, we can have a multijunction cell with very high efficiency with a competitive cost

Modélisation de cellules solaires multi-tandem bas coût et très haut rendement à base de nitrures des éléments III-V

Nitrides of III-V elements, have been widely studied because of their interessting applications in the LED light-emitting diodes, laser diodes and photodetectors. The bandgap of such ternary or quaternary alloys can be adjusted depending on the composition, at photon energies ranging from infrared to ultraviolet. This adjustable direct bandgap over a wide range, making these materials valuable for photovoltaic applications due to the possibility of inventing not only multi-junction solar cells at high efficiency, but also third generation solar cells such as cells with intermediate bandgap, based solely on nitrides alloys. In addition to their large adjustable bandgap, nitrides also show other interesting photovoltaic properties, such as low effective masses of the charge carriers, high mobility, high absorption coefficient and a radiation tolerance. The technology of III-V nitrides has demonstrated its ability to grow high quality crystal structures and to manufacture optoelectronic devices, which confirm its potential for photovoltaic solar energy with very high efficiency. By incorporating this material with crystalline silicon junction, we can have a multijunction cell with very high efficiency with a competitive cost.Les nitrures des éléments III-V, ont été largement étudiés en raison de leurs applications dans les diodes électroluminescentes DEL, les diodes laser et les photodétecteurs. L’énergie de la bande interdite « Gap » de ces alliages ternaires ou quaternaires peut être ajustée en fonction de la composition, à des énergies de photons allant de l'infrarouge à l'ultraviolet. Ce gap direct ajustable sur une large gamme, rend ces matériaux très utiles pour les applications photovoltaïques en raison de la possibilité d'inventer non seulement des cellules solaires multi-jonction à haut rendement, mais également les cellules solaires de troisième génération comme les cellules à bandes intermédiaires, reposant uniquement sur les alliages nitrures. En plus de leur grand gap ajustable, les nitrures montrent également d’autres propriétés photovoltaïques intéressantes, comme de faibles masses effectives des porteurs de charge, de fortes mobilités, des coefficients d'absorption élevés ainsi qu’une tolérance aux radiations. La technologie des nitrures III-V a démontré sa capacité à croître des structures cristallines de haute qualité et à fabriquer des dispositifs optoélectroniques, ce qui confirme son potentiel pour le solaire photovoltaïque à très haut rendement. En intégrant ce matériau avec une jonction de silicium cristallin, nous pourrons avoir une cellule multijonction à très haut rendement avec un coût compétitive

Modélisation de cellules tandem InGaN sur Silicium: Comparaison des structures à 2 et 4 contacts

National audienc

Modeling of tandem cells InGaN/Si: Comparison 2-contacts/4-contacts

International audienc

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

Due to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell

Modeling of InGaN/Si tandem cells: comparison between 2-contacts/4-contacts

International audienceDue to its electrical and optical interesting properties, InGaN alloy is being intensively studied to be combined with silicon in order to achieve low-cost high-efficiency solar cell. However, a relatively thick monophasic layer of InGaN is difficult to grow due to the relaxation issue in material. This issue can be avoided by semibulk structure. In this work, we present an InGaN/Si double-junction solar cell modeled using Silvaco-ATLAS TCAD software. We have taken into account polarization effect in III-N materials. We have shown that 50% of indium is needed to ensure the current matching between the top cell and the bottom cell in 2-terminal configuration. Such high indium composition is technologically challenging to grow. Thus, we have modeled a 4-terminals solar cell with relatively low indium composition (In = 25%) where current matching is not needed. With technologically feasible structural parameters, we have shown that an efficiency near to 30% can be achieved with InGaN/Si 4-contact tandem cell