Superconducting and Normal State Properties of Heavily Hole-Doped Diamond

We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.Comment: 10 pages, 3 figure

Optically tunable nuclear magnetic resonance in a single quantum dot

We report optically detected nuclear magnetic resonance (ODNMR) measurements on small ensembles of nuclear spins in single GaAs quantum dots. Using ODNMR we make direct measurements of the inhomogeneous Knight field from a photoexcited electron which acts on the nuclei in the dot. The resulting shifts of the NMR peak can be optically controlled by varying the electron occupancy and its spin orientation, and lead to strongly asymmetric line shapes at high optical excitation. The all-optical control of the NMR line shape will enable position-selective control of small groups of nuclear spins inside a dot

Size-dependent bandgap and particle size distribution of colloidal semiconductor nanocrystals

A new analytical expression for the size-dependent bandgap of colloidal semiconductor nanocrystals is proposed within the framework of the finite-depth square-well effective mass approximation in order to provide a quantitative description of the quantum confinement effect. This allows one to convert optical spectroscopic data (photoluminescence spectrum and absorbance edge) into accurate estimates for the particle size distributions of colloidal systems even if the traditional effective mass model is expected to fail, which occurs typically for very small particles belonging to the so-called strong confinement limit. By applying the reported theoretical methodologies to CdTe nanocrystals synthesized through wet chemical routes, size distributions are inferred and compared directly to those obtained from atomic force microscopy and transmission electron microscopy. This analysis can be used as a complementary tool for the characterization of nanocrystal samples of many other systems such as the II-VI and III-V semiconductor materials.Comment: 9 pages, 5 figure

Superconductivity in silicon nanostructures

We present the findings of the superconductivity observed in the silicon nanostructures prepared by short time diffusion of boron on the n-type Si(100) surface. These Si-based nanostructures represent the p-type ultra-narrow self-assembled silicon quantum wells, 2nm, confined by the delta - barriers heavily doped with boron, 3nm. The EPR and the thermo-emf studies show that the delta - barriers appear to consist of the trigonal dipole centres, which are caused by the negative-U reconstruction of the shallow boron acceptors. Using the CV and thermo-emf techniques, the transport of two-dimensional holes inside SQW is demonstrated to be accompanied by single-hole tunneling through these negative-U centres that results in the superconductivity of the delta - barriers. The values of the correlation gaps obtained from these measurements are in a good agreement with the data derived from the temperature and magnetic field dependencies of the magnetic susceptibility, which reveal a strong diamagnetism and additionally identify the superconductor gap value.Comment: 4 pages, 6 figures, presented at the 4th International Conference on Vortex Matter in Superconductors, Crete, Greece, September 3-9, 200

Biexciton recombination rates in self-assembled quantum dots

The radiative recombination rates of interacting electron-hole pairs in a quantum dot are strongly affected by quantum correlations among electrons and holes in the dot. Recent measurements of the biexciton recombination rate in single self-assembled quantum dots have found values spanning from two times the single exciton recombination rate to values well below the exciton decay rate. In this paper, a Feynman path-integral formulation is developed to calculate recombination rates including thermal and many-body effects. Using real-space Monte Carlo integration, the path-integral expressions for realistic three-dimensional models of InGaAs/GaAs, CdSe/ZnSe, and InP/InGaP dots are evaluated, including anisotropic effective masses. Depending on size, radiative rates of typical dots lie in the regime between strong and intermediate confinement. The results compare favorably to recent experiments and calculations on related dot systems. Configuration interaction calculations using uncorrelated basis sets are found to be severely limited in calculating decay rates.Comment: 11 pages, 4 figure

Interface optical phonons in spheroidal dots: Raman selection rules

The contribution of interface phonons to the first order Raman scattering in nanocrystals with non spherical geometry is analyzed. Interface optical phonons in the spheroidal geometry are discussed and the corresponding Frohlich-like electron-phonon interaction is reported in the framework of the dielectric continuum approach. It is shown that the interface phonon modes are strongly dependent on the nanocrystal geometry, particularly on the ellipsoid's semi-axis ratio. The new Raman selection rules have revealed that solely interface phonon modes with even angular momentum are allowed to contribute to the first order phonon-assisted scattering of light. On this basis we are able to give an explanation for the observed low frequency shoulders present in the Raman cross-section of several II-VI semiconductor nanostructures.Comment: 8 pages, 2 figure

1D Exciton Spectroscopy of Semiconductor Nanorods

We have theoretically shown that optical properties of semiconductor nanorods are controlled by 1D excitons. The theory, which takes into account anisotropy of spacial and dielectric confinement, describes size dependence of interband optical transitions, exciton binding energies. We have demonstrated that the fine structure of the ground exciton state explains the linear polarization of photoluminescence. Our results are in good agreement with the measurements in CdSe nanorods