Large-Scale Urban Developments and the Future of Cities: Possible Checks and Balances

Urban planning deploys large-scale urban development as a preferred strategy in many places around the world. Such an approach to development transforms the urban form, generates new socio-spatial urban relations, and changes planning principles, decision-making and urban power dynamics. This editorial introduces large scale urban development as the current urban policy, discusses possible checks and balances and presents the thematic issue on "Large Urban Development and the Future of Cities.

Characteristics of stress-induced defects under positive bias in high-k/InGaAs stacks

The introduction of InGaAs as a channel material for complementary metal-oxide-semiconductor technology presents major challenges in terms of the characterization of the various defects that affect the performance and reliability. Understanding the generation of defects by constant voltage stresses is crucial in terms of their concentration profiles and energy levels. In particular, we want to understand the real nature of the defects responsible for the dispersion of C-V in strong accumulation. Here, we show that the degradation under positive bias of metal/Al2O3/n-InGaAs capacitors reveals two contributions depending on the temperature that affects the C-V curves in a different way. Based on features of stressed C-V curves, it is possible to estimate the onset point of the distribution of border traps near the midgap condition. The results suggest that these defects are strongly related to the characteristics of the InGaAs substrate.Fil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Winter, R.. Technion - Israel Institute of Technology; IsraelFil: Krylov, I.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; Israe

Characteristics of the dynamics of breakdown filaments in Al2O3/InGaAs stacks

In this paper, the Al2O3/InGaAs interface was studied by X-ray photoelectron spectroscopy (XPS) after a breakdown (BD) event at positive bias applied to the gate contact. The dynamics of the BD event were studied by comparable XPS measurements with different current compliance levels during the BD event. The overall results show that indium atoms from the substrate move towards the oxide by an electro-migration process and oxidize upon arrival following a power law dependence on the current compliance of the BD event. Such a result reveals the physical feature of the breakdown characteristics of III-V based metal-oxide-semiconductor devices.Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Shekhter, P.. Technion - Israel Institute of Technology; IsraelFil: Cohen Weinfeld, K.. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, M.. Technion - Israel Institute of Technology; Israe

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

We describe the electrical properties of atomic layer deposited TiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub> bilayer gate oxides which simultaneously achieve high gate capacitance density and low gate leakage current density. Crystallization of the initially amorphous TiO<sub>2</sub> film contributes to a significant accumulation capacitance increase (∼33%) observed after a forming gas anneal at 400 °C. The bilayer dielectrics reduce gate leakage current density by approximately one order of magnitude at flatband compared to Al<sub>2</sub>O<sub>3</sub> single layer of comparable capacitance equivalent thickness. The conduction band offset of TiO<sub>2</sub> relative to InGaAs is 0.6 eV, contributing to the ability of the stacked dielectric to suppress gate leakage conduction

Urban Morphology and Qualitative Topology: Open Green Spaces in High-Rise Residential Developments

High-rise housing complexes (HRHCs) are a prominent trend in urban development. They generate new configurations of open green spaces, thus creating a new set of human-environment relations and a new constellation of urban landscapes. However, little attention has been devoted by the literature to these new spatial configurations and the urban experience they offer. Focusing on the spaces between buildings, this research article examines the urban morphology of these large urban developments and how they are being experienced by residents. Based on morphological analysis, we propose a set of outputs with which to discern and evaluate various characteristics of these new spaces. Namely, a typology of HRHCs complexes, three evaluation indexes, and a green/gray nolli map. Drawing on morphological analysis, the research discusses the role of green spaces of HRHCs in the experience of residents. We portray different tensions arising from the residents’ experience based on walking interviews and propose how these tensions are connected to the morphology of space. Juxtaposing the morphological and qualitative topological analyses, we focus on the way that different planning aspects of HRHCs’ open spaces might foster everyday use and function as well as attitudes and feelings

Influence of the spatial distribution of border traps in the capacitance frequency dispersion of Al2O3/InGaAs

In this paper, the capacitance frequency dispersion in strong accumulation of capacitance voltage curves has been studied for different high-k dielectric layers in MOS stacks. By studying experimental data at low (77 K) and room temperature (300 K), in oxides with different density of defects, it was possible reflect the spatial distribution of the defects in the capacitance frequency dispersion. The experimental data show that while at room temperature, the capacitance dispersion is dominated by the exchange of carriers from the semiconductor into oxide traps far away from the interface, at low temperature the oxide traps near the Al2O3/InGaAs interface are responsible for the frequency dispersion. The results indicate that the capacitance dispersion in strong accumulation reflect the spatial distribution of traps within the oxide, and that dielectric/semiconductor conduction band offset is a critical parameter for determining the capacitance dispersion for Al2O3/InGaAs based gate stacks.Fil: Palumbo, Félix Roberto Mario. Comisión Nacional de Energía Atómica; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; ArgentinaFil: Aguirre, Fernando Leonel. Universidad Tecnológica Nacional; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Pazos, Sebastián Matías. Consejo Nacional de Investigaciones Científicas y Técnicas; Argentina. Universidad Tecnológica Nacional; Argentina. Comisión Nacional de Energía Atómica; ArgentinaFil: Krylov, Igor. Technion - Israel Institute of Technology; IsraelFil: Winter, Roy. Technion - Israel Institute of Technology; IsraelFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israe

Optimal Product Variety in Radio Markets

A vast theoretical literature shows that inefficient market structures may arise in free entry equilibria. Previous empirical work demonstrated that excessive entry may obtain in local radio markets. Our paper extends that literature by relaxing the assumption that stations are symmetric, allowing instead for endogenous station differentiation along both (observed) horizontal and (unobserved) vertical dimensions. We find that, in most broadcasting formats, a social planner who takes into account the welfare of market participants (stations and advertisers) would eliminate 50%–60% of the stations observed in equilibrium. In 80%–94.9% of markets that have high quality stations in the observed equilibrium, welfare could be unambiguously improved by converting one such station into low quality broadcasting. In contrast, it is never unambiguously welfare-enhancing to convert an observed low quality station into a high quality one. This suggests local over-provision of quality in the observed equilibrium, in addition to the finding of excessive entry

Hf-based high-k dielectrics for p-Ge MOS gate stacks

The physical and electrical properties of the gate stack high-k/Al2O3/GeO2/p-Ge were studied in detail, where the high-k is either HfO2 or alloyed HfO2 (HfZrOy, HfGdOx, or HfAlOx). Electrical measurements combined with x-ray photoelectron spectroscopy chemical bonding analysis and band alignment determination were conducted in order to assess the suitability of hafnium-based high-k for this kind of gate stacks, with emphasis on low density of interface states and border traps. HfAlOx was found to be the most promising high-k from those studied. The authors have also found that the current- voltage trends for the various systems studied can be explained by the band alignment of the samples obtained by our x-ray photoelectron spectroscopy analysis.Fil: Fadida, Sivan. Technion - Israel Institute of Technology; IsraelFil: Palumbo, Félix Roberto Mario. Technion - Israel Institute of Technology; Israel. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Nyns, Laura. Imec; BélgicaFil: Lin, Dennis. Imec; BélgicaFil: Van Elshocht, Sven. Imec; BélgicaFil: Caymax, Matty. Imec; BélgicaFil: Eizenberg, Moshe. Technion - Israel Institute of Technology; Israe

ORCA: Ordering-free Regions for Consistency and Atomicity

Writing correct synchronization is one of the main difficulties of multithreaded programming. Incorrect synchronization causes many subtle concurrency errors such as data races and atomicity violations. Previous work has proposed stronger memory consistency models to rule out certain classes of concurrency bugs. However, these approaches are limited by a program’s original (and possibly incorrect) synchronization. In this work, we provide stronger guarantees than previous memory consistency models by punctuating atomicity only at ordering constructs like barriers, but not at lock operations. We describe the Ordering-free Regions for Consistency and Atomicity (ORCA) system which enforces atomicity at the granularity of ordering-free regions (OFRs). While many atomicity violations occur at finer granularity, in an empirical study of many large multithreaded workloads we find no examples of code that requires atomicity coarser than OFRs. Thus, we believe OFRs are a conservative approximation of the atomicity requirements of many programs. ORCA assists programmers by throwing an exception when OFR atomicity is threatened, and, in exception-free executions, guaranteeing that all OFRs execute atomically. In our evaluation, we show that ORCA automatically prevents real concurrency bugs. A user-study of ORCA demonstrates that synchronizing a program with ORCA is easier than using a data race detector. We evaluate modest hardware support that allows ORCA to run with just 18% slowdown on average over pthreads, with very similar scalability