114 research outputs found

    Positron studies of surfaces, structure and electronic properties of nanocrystals

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    A brief review is given of recent positron studies of metal and semiconductor nanocrystals. The prospects offered by positron annihilation as a sensitive method to access nanocrystal (NC) properties are described and compared with other experimental methods. The tunability of the electronic structure of nanocrystals underlies their great potential for application in many areas. Owing to their large surface-to-volume ratio, the surfaces and interfaces of NCs play a crucial role in determining their properties. Here we focus on positron 2D angular correlation of annihilation radiation (2D-ACAR) and (two-detector) Doppler studies for investigating surfaces and electronic properties of CdSe NCs.Comment: 6 pages, 5 figures, to appear in Physica Status Solidi (b) - basic solid state physics, presented at the 14th International Conference of Positron Annihilation ICPA-1

    Bulk Fermi surface and momentum density in heavily doped La2−x_{2-x}Srx_xCuO4_4 using high resolution Compton scattering and positron annihilation spectroscopies

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    We have observed the bulk Fermi surface (FS) in an overdoped (xx=0.3) single crystal of La2−x_{2-x}Srx_xCuO4_4 by using Compton scattering. A two-dimensional (2D) momentum density reconstruction from measured Compton profiles yields a clear FS signature in the third Brillouin zone along [100]. The quantitative agreement between density functional theory (DFT) calculations and momentum density experiment suggests that Fermi-liquid physics is restored in the overdoped regime. In particular the predicted FS topology is found to be in good accord with the corresponding experimental data. We find similar quantitative agreement between the measured 2D angular correlation of positron annihilation radiation (2D-ACAR) spectra and the DFT based computations. However, 2D-ACAR does not give such a clear signature of the FS in the extended momentum space in either the theory or the experiment.Comment: 9 pages, 8 figure

    Annealing of SnO2 thin films by ultra-short laser pulses

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    Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance [Proc. SPIE 8826, 88260I (2013)]. The figure of merit Ï• = T10 / Rsh was increased up to 59% after laser processing. In this paper we study and discuss the causes of this improvement at the atomic scale, which explain the observed decrease of conductivity as well as the observed changes in the refractive index n and extinction coefficient k. It was concluded that the absorbed laser energy affected the optoelectronic properties preferentially in the top 100-200 nm region of the films by several mechanisms, including the modification of the stoichiometry, a slight desorption of dopant atoms (F), adsorption of hydrogen atoms from the atmosphere and the introduction of laser-induced defects, which affect the strain of the film

    Electronic coupling of colloidal CdSe nanocrystals monitored by thin-film positron-electron momentum density methods

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    The effect of temperature controlled annealing on the confined valence electron states in CdSe nanocrystal arrays, deposited as thin films, was studied using two-dimensional angular correlation of annihilation radiation (2D-ACAR). A reduction in the intensity by ~35% was observed in a feature of the positron annihilation spectrum upon removal of the pyridine capping molecules above 200 degrees Celsius in a vacuum. This reduction is explained by an increased electronic interaction of the valence orbitals of neighboring nanocrystals, induced by the formation of inorganic interfaces. Partial evaporation of the nanoporous CdSe layer and additional sintering into a polycrystalline thin film was observed at a relatively low temperature of ~486 degrees Celsius.Comment: The article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.or

    Nature of the positron state in CdSe quantum dots

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    Previous studies have shown that positron-annihilation spectroscopy is a highly sensitive probe of the electronic structure and surface composition of ligand-capped semiconductor Quantum Dots (QDs) embedded in thin films. Nature of the associated positron state, however, whether the positron is confined inside the QDs or localized at their surfaces, has so far remained unresolved. Our positron-annihilation lifetime spectroscopy (PALS) studies of CdSe QDs reveal the presence of a strong lifetime component in the narrow range of 358-371 ps, indicating abundant trapping and annihilation of positrons at the surfaces of the QDs. Furthermore, our ab-initio calculations of the positron wave function and lifetime employing a recent formulation of the Weighted Density Approximation (WDA) demonstrate the presence of a positron surface state and predict positron lifetimes close to experimental values. Our study thus resolves the longstanding question regarding the nature of the positron state in semiconductor QDs, and opens the way to extract quantitative information on surface composition and ligand-surface interactions of colloidal semiconductor QDs through highly sensitive positron-annihilation techniques.Comment: 14 pages, 3 figure

    Integration of first-principles methods and crystallographic database searches for new ferroelectrics: Strategies and explorations

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    In this concept paper, the development of strategies for the integration of first-principles methods with crystallographic database mining for the discovery and design of novel ferroelectric materials is discussed, drawing on the results and experience derived from exploratory investigations on three different systems: (1) the double perovskite Sr(Sb1/2_{1/2}Mn1/2_{1/2})O3_3 as a candidate semiconducting ferroelectric; (2) polar derivatives of schafarzikite MMSb2_2O4_4; and (3) ferroelectric semiconductors with formula M2M_2P2_2(S,Se)6_6. A variety of avenues for further research and investigation are suggested, including automated structure type classification, low-symmetry improper ferroelectrics, and high-throughput first-principles searches for additional representatives of structural families with desirable functional properties.Comment: 13 pages, 5 figures, 4 table
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