913 research outputs found

    Novel fabrication technique for planar glass waveguides

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    A novel technique has been developed for the deposition of low-loss planar glass waveguides by directly spin coating from the liquid, thus overcoming the problems of reproducing glass stoichiometry when depositing from the vapour

    Q-switched neodymium-doped phosphate glass fibre lasers

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    The operation of a short-pulse, Q-switched, neodymium-doped fiber laser operating at 1.054µm is described experimentally and theoretically. The laser is efficiently pumped with a single-stripe AlGaAs laser diode and emits &gt;1kW pulses. It is seen that due to high gain, short pulses with high energy extraction efficiency can be obtained. The feature of broad emission lines associated with rare-earth-doped glasses is exploited to demonstrate tunable, Q-switched operation over a 40 nm tuning range. <br/

    Cavity dumping of neodymium-doped fibre lasers using acousto-optic modulator

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    We report high-repetition-rate pulses obtained by cavity dumping of a neodymium-doped phosphate glass fibre laser operating at 1053 nm using a specially constructed acoustooptic modulator. With 27 mW absorbed pump power at 812 nm we obtained stable trains of output pulses with repetition rate in the range 0.5 to 8MHz having corresponding pulse widths in the range 127 to 19 ns without significant sacrifice in the average output power of 8 mW

    Vacuum production of OTFTs by vapour jet deposition of dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) on a lauryl acrylate functionalised dielectric surface

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    Roll-to-roll (R2R) production of organic transistors and circuits require patterned deposition of organic layers at high deposition rate. Here we demonstrate a vapour-jet process for the rapid deposition of the organic semiconductor dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). The deposition rate achieved, equivalent to ~200 nm/s onto a stationary substrate, was several orders of magnitude faster than ordinary thermal evaporation. Nevertheless, transistor yield was 100% with an average mobility of 0.4 cm2/Vs in a single pass deposition onto a substrate moving at 0.15 m/min. We also demonstrate a vacuum, high rate R2R-compatible process for surfacefunctionalising a gate dielectric layer with lauryl acrylate which enabled an all-vacuum route to the fabrication of a five-stage ring oscillator

    Stable organic static random access memory from a roll-to-roll compatible vacuum evaporation process

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    An organic Static Random Access Memory (SRAM) based on p-type, six-transistor cells is demonstrated. The bottom-gate top-contact thin film transistors composing the memory were fabricated on flexible polyethylene naphthalate substrates. All metallization layers and the p-type semiconductor dinaphtho[2,3-b:2',3'-f] thieno[3,2-b]thiophene were deposited by thermal evaporation. The gate dielectric was deposited in a vacuum roll-to-roll environment at a web speed of 25 m/min by flash-evaporation and subsequent plasma polymerisation of tripropyleneglycol diacrylate (TPGDA). Buffering the TPGDA with a polystyrene layer yields hysteresis-free transistor characteristics with turn-on voltage close to zero. The static transfer characteristic of diode-connected load inverters were also hysteresis-free with maximum gain &gt;2 and noise margin ∼2.5 V. When incorporated into SRAM cells the time-constant for writing data into individual SRAM cells was less than 0.4 ms. Little change occurred in the magnitude of the stored voltages, when the SRAM was powered continuously from a −40 V rail for over 27 h testifying to the electrical stability of the threshold voltage of the individual transistors. Unencapsulated SRAM cells measured two months after fabrication showed no significant degradation after storage in a clear plastic container in normal laboratory ambient

    Organic Digital Logic and Analog Circuits Fabricated in a Roll-to-Roll Compatible Vacuum-Evaporation Process

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    We report the fabrication of a range of organic circuits produced by a high-yielding, vacuum-based process compatible with roll-to-roll production. The circuits include inverters, NAND and NOR logic gates, a simple memory element (set-reset latch), and a modified Wilson current mirror circuit. The measured circuit responses are presented together with simulated responses based on a previously reported transistor model of organic transistors produced using our fabrication process. Circuit simulations replicated all the key features of the experimentally observed circuit performance. The logic gates were capable of operating at frequencies in excess of 1 kHz while the current mirror circuit produced currents up to 18 μA

    A high-yield vacuum-evaporation-based R2R-compatible fabrication route for organic electronic circuits

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    Advances are described in a vacuum-evaporation-based approach for the roll-to-roll (R2R) production of organic thin film transistors (TFTs) and circuits. Results from 90-transistor arrays formed directly onto a plasma-polymerised diacrylate gate dielectric are compared with those formed on polystyrene-buffered diacrylate. The latter approach resulted in stable, reproducible transistors with yields in excess of 90%. The resulting TFTs had low turn-on voltage, on-off ratios ∼106 and mobility ∼1 cm2/V s in the linear regime, as expected for dinaphtho[2,3-b: 2′,3′-f] thieno[3,2-b]thiophene the air stable small molecule used as the active semiconductor. We show that when device design is constrained by the generally poor registration ability of R2R processes, parasitic source-drain currents can lead to a >50% increase in the mobility extracted from the resulting TFTs, the increases being especially marked in low channel width devices. Batches of 27 saturated-load inverters were fabricated with 100% yield and their behaviour successfully reproduced using TFT parameters extracted with Silvaco's UOTFT Model. 5- and 7-stage ring oscillator (RO) outputs ranged from ∼120 Hz to >2 kHz with rail voltages, VDD, increasing from -15 V to -90 V. From simulations an order of magnitude increase in frequency could be expected by reducing parasitic gate capacitances. During 8 h of continuous operation at VDD = -60 V, the frequency of a 7-stage RO remained almost constant at ∼1.4 kHz albeit that the output signal amplitude decreased from ∼22 V to ∼10 V. Over the next 30 days of intermittent operation further degradation in performance occurred although an unused RO showed no deterioration over the same period. © 2014 The Authors. Published by Elsevier B.V

    Human papillomavirus 16 L2 inhibits the transcriptional activation function, but not the DNA replication function, of HPV-16 E2

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    In this study we analysed the outcome of the interaction between HPV-16 L2 and E2 on the transactivation and DNA replication functions of E2. When E2 was expressed on its own, it transactivated a number of E2-responsive promoters but co-expression of L2 led to the down-regulation of the transcription transactivation activity of the E2 protein. This repression is not mediated by an increased degradation of the E2 protein. In contrast, the expression of L2 had no effect on the ability of E2 to activate DNA replication in association with the viral replication factor E1. Deletion mutagenesis identified L2 domains responsible for binding to E2 (first 50 N-terminus amino acid residues) and down-regulating its transactivation function (residues 301–400). The results demonstrate that L2 selectively inhibits the transcriptional activation property of E2 and that there is a direct interaction between the two proteins, although this is not sufficient to mediate the transcriptional repression. The consequences of the L2–E2 interaction for the viral life cycle are discussed

    The Flare-energy Distributions Generated by Kink-unstable Ensembles of Zero-net-current Coronal Loops

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    It has been proposed that the million degree temperature of the corona is due to the combined effect of barely-detectable energy releases, so called nanoflares, that occur throughout the solar atmosphere. Alas, the nanoflare density and brightness implied by this hypothesis means that conclusive verification is beyond present observational abilities. Nevertheless, we investigate the plausibility of the nanoflare hypothesis by constructing a magnetohydrodynamic (MHD) model that can derive the energy of a nanoflare from the nature of an ideal kink instability. The set of energy-releasing instabilities is captured by an instability threshold for linear kink modes. Each point on the threshold is associated with a unique energy release and so we can predict a distribution of nanoflare energies. When the linear instability threshold is crossed, the instability enters a nonlinear phase as it is driven by current sheet reconnection. As the ensuing flare erupts and declines, the field transitions to a lower energy state, which is modelled by relaxation theory, i.e., helicity is conserved and the ratio of current to field becomes invariant within the loop. We apply the model so that all the loops within an ensemble achieve instability followed by energy-releasing relaxation. The result is a nanoflare energy distribution. Furthermore, we produce different distributions by varying the loop aspect ratio, the nature of the path to instability taken by each loop and also the level of radial expansion that may accompany loop relaxation. The heating rate obtained is just sufficient for coronal heating. In addition, we also show that kink instability cannot be associated with a critical magnetic twist value for every point along the instability threshold

    Regenerative Nd-glass amplifier seeded with a Nd fibre laser

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    Wavelength tuning and broad-bandwidth operation of a passively mode-locked Nd:fiber laser is demonstrated at 1060 nm. The oscillator pulses are used to seed a bulk regenerative Nd:glass amplifier, and 300-fs transform-limited pulses with an energy of 10µJ are obtained after 31 round trips at a repetition rate of 500 Hz
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