Seventy Years of Phycology at The Ohio State University

Author Institution: Department of Botany, 1735 Neil Avenue, The Ohio State UniversityPhycology at The Ohio State University had its conception with a Proposed Algological Survey of Ohio by Professor William A. Kellerman in 1902. Seventy years of teaching and research in phycology, and the faculty who have contributed to the program since Professor Kellerman's proposal, are reviewed. This includes the chronological sequence of this development at The Ohio State University, from a Botany Department speciality to an interdisciplinary program. Masters and doctoral degrees granted in phycology are listed, as are the bibliographies that pertain to algae of the phycology faculty for the years from 1902 to 1972 inclusive

Some Algae, Including New Species, from New Mexico

Author Institution: The Ohio State Universit

The Occurrence of Monostroma and Enteromorpha in Ohio

Author Institution: Department of Botany and Plant Pathology, The Ohio State University, Columbus 1

New Records of Algae from the West End of Lake Erie

Author Institution: Department of Botany and Plant Pathology, The Ohio State University, Columbus, 1

Development and fabrication of improved Schottky power diodes, phases I and II

Reproducible methods for the fabrication of silicon Schottky diodes were developed for the metals tungsten, aluminum, conventional platinum silicide and low temperature platinum silicide. Barrier heights and barrier lowering were measured permitting the accurate prediction of ideal forward and reverse diode performance. Processing procedures were developed which permit the fabrication of large area (approximately 1 sqcm) mesa-geometry power Schottky diodes with forward and reverse characteristics that approach theoretical values

A Comparison of the Anterior Horn Cells in the Normal Spinal Cord and After Amputation

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Development and fabrication of improved Schottky power diodes

Reproducible methods for the fabrication of silicon Schottky diodes have been developed for tungsten, aluminum, conventional platinum silicide, and low temperature platinum silicide. Barrier heights and barrier lowering under reverse bias have been measured, permitting the accurate prediction of forward and reverse diode characteristics. Processing procedures have been developed that permit the fabrication of large area (about 1 sq cm) mesageometry power Schottky diodes with forward and reverse characteristics that approach theoretical values. A theoretical analysis of the operation of bridge rectifier circuits has been performed, which indicates the ranges of frequency and voltage for which Schottky rectifiers are preferred to p-n junctions. Power Schottky rectifiers have been fabricated and tested for voltage ratings up to 140 volts