503 research outputs found

    Uniaxial-stress induced phase transitions in [001]c-poled 0.955Pb(Zn1/3Nb2/3)O3-0.045PbTiO3

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    First-order, rhombohedral to orthorhombic, stress-induced phase transitions have been evidenced by bulk charge-stress measurements and X-ray diffraction derived lattice strain measurements in [001]c-poled PZN-4.5PT. The transitions are induced by uniaxial, compressive loads applied either along or perpendicular to the poling direction. In each case, they occur via rotation of the polar vector in the Cm monoclinic plane and the induced lattice strain is hysteretic yet reversible. Although no depoling is observed in the transverse mode, net depolarization is observed under longitudinal stress which is important for the use of [001]c-poled PZN-PT and PMN-PT single crystals in Tonpilz-type underwater projectors.Comment: To be published in Applied Physics Letters, 16 pages, 3 figure

    Bichiral structure of feroelectric domain wall driven by flexoelectricity

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    The influence of flexoelectric coupling on the internal structure of neutral domain walls in tetragonal phase of perovskite ferroelectrics is studied. The effect is shown to lower the symmetry of 180-degree walls which are oblique with respect to the cubic crystallographic axes, while {100} and {110} walls stay "untouched". Being of the Ising type in the absence of the flexoelectric interaction, the oblique domain walls acquire a new polarization component with a structure qualitatively different from the classical Bloch-wall structure. In contrast to the Bloch-type walls, where the polarization vector draws a helix on passing from one domain to the other, in the flexoeffect-affected wall, the polarization rotates in opposite directions on the two sides of the wall and passes through zero in its center. Since the resulting polarization profile is invariant upon inversion with respect to the wall center it does not brake the wall symmetry in contrast to the classical Bloch-type walls. The flexoelectric coupling lower the domain wall energy and gives rise to its additional anisotropy that is comparable to that conditioned by the elastic anisotropy. The atomic orderof- magnitude estimates shows that the new polarization component P2 may be comparable with spontaneous polarization Ps, thus suggesting that, in general, the flexoelectric coupling should be mandatory included in domain wall simulations in ferroelectrics. Calculations performed for barium titanate yields the maximal value of the P2, which is much smaller than that of the spontaneous polarization. This smallness is attributed to an anomalously small value of a component of the "strain-polarization" elecrostictive tensor in this material

    Traits related to drought tolerance mechanisms in cassava

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    Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism

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    Charge compensation at the interface is a fundamental phenomenon determining the operation conditions of thin-film devices incorporating ferroelectrics. The underlying mechanisms have been thoroughly addressed in perovskite ferroelectrics where the charge compensation originates from injection through the interface-adjacent layer. Here, we demonstrate that polarization screening in the polymer ferroelectric polyvinylidene fluoride-trifluoroethylene (P(VDF-TrFE)) films can be dominated by charge injection through the bulk, unlike ferroelectric oxides. The experimental evidence relies on polarization imprint under applied field and time-dependence of the dielectric constant. A linearized electrostatic model correctly accounts for the observed trends and links their occurrence to the unique properties of P(VDF-TrFE). (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754146

    Compositional Inversion Symmetry Breaking in Ferroelectric Perovskites

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    Ternary cubic perovskite compounds of the form A_(1/3)A'_(1/3)A''_(1/3)BO_3 and AB_(1/3)B'_(1/3)B''_(1/3)O_3, in which the differentiated cations form an alternating series of monolayers, are studied using first-principles methods. Such compounds are representative of a possible new class of materials in which ferroelectricity is perturbed by compositional breaking of inversion symmetry. For isovalent substitution on either sublattice, the ferroelectric double-well potential is found to persist, but becomes sufficiently asymmetric that minority domains may no longer survive. The strength of the symmetry breaking is enormously stronger for heterovalent substitution, so that the double-well behavior is completely destroyed. Possible means of tuning between these behaviors may allow for the optimization of resulting materials properties.Comment: 4 pages, two-column style with 3 postscript figures embedded. Uses REVTEX and epsf macros. Also available at http://www.physics.rutgers.edu/~dhv/preprints/index.html#sai_is

    Electrostatic model of atomic ordering in complex perovskite alloys

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    We present a simple ionic model which successfully reproduces the various types of compositional long-range order observed in a large class of complex insulating perovskite alloys. The model assumes that the driving mechanism responsible for the ordering is simply the electrostatic interaction between the different ionic species. A possible new explanation for the anomalous long-range order observed in some Pb relaxor alloys, involving the proposed existence of a small amount of Pb^4+ on the B sublattice, is suggested by an analysis of the model.Comment: 4 pages, two-column style with 1 postscript figure embedded. Uses REVTEX and epsf macros. Also available at http://www.physics.rutgers.edu/~dhv/preprints/index.html#lb_orde

    Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films

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    Several SrTiO3 (STO) thin films without electrodes processed by pulsed laser deposition, of thicknesses down to 40 nm, were studied using infrared transmission and reflection spectroscopy. The complex dielectric responses of polar phonon modes, particularly ferroelectric soft mode, in the films were determined quantitatively. The compressed epitaxial STO films on (100) La0.18Sr0.82Al0.59-Ta0.41O3 substrates (strain 0.9%) show strongly stiffened phonon responses, whereas the soft mode in polycrystalline film on (0001) sapphire substrate shows a strong broadening due to grain boundaries and/or other inhomogeneities and defects. The stiffened soft mode is responsible for a much lower static permittivity in the plane of the compressed film than in the bulk samples.Comment: 11 page
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