Apparatus for establishing flow of a fluid mass having a known velocity

An apparatus for establishing a flow of fluid mass, such as gas, having a known velocity is introduced. The apparatus is characterized by an hermetically sealed chamber conforming to a closed-loop configuration and including a throat and a plurality of axially displaceable pistons for sweeping through the throat a stream of gas including a core and an unsheared boundary layer. Within the throat there is a cylindrical coring body concentrically related to the throat for receiving the core, and a chamber surrounding the cylindrical body for drawing off the boundary layer, whereby the velocity of the core is liberated from the effects of the velocity of the boundary layer

Peeling Bifurcations of Toroidal Chaotic Attractors

Chaotic attractors with toroidal topology (van der Pol attractor) have counterparts with symmetry that exhibit unfamiliar phenomena. We investigate double covers of toroidal attractors, discuss changes in their morphology under correlated peeling bifurcations, describe their topological structures and the changes undergone as a symmetry axis crosses the original attractor, and indicate how the symbol name of a trajectory in the original lifts to one in the cover. Covering orbits are described using a powerful synthesis of kneading theory with refinements of the circle map. These methods are applied to a simple version of the van der Pol oscillator.Comment: 7 pages, 14 figures, accepted to Physical Review

Macroscopic and microscopic studies of electrical properties of very thin silicon dioxide subject to electrical stress

The electrical characteristics of various size tunnel switch diode devices, composed of Al/SiO2/n-Si/p+-Si layers, which operate with a range of parameters (such as current densities in excess of 104 A/cm2) that stress the oxide layer far beyond the levels used in typical thin oxide metal-oxide semiconductor research have been examined. It is found that the first time a large current and electric field are applied to the device, a "forming" process enhances transport through the oxide in the vicinity of the edges of the gate electrode, but the oxide still retains its integrity as a tunnel barrier. The device operation is relatively stable to stresses of greater than 107 C/cm2 areally averaged, time-integrated charge injection. Duplication and characterization of these modified oxide tunneling properties was attempted using scanning tunneling microscopy (STM) to stress and probe the oxide. Electrical stressing with the STM tip creates regions of reduced conductivity, possibly resulting from trapped charge in the oxide. Lateral variations in the conductivity of the unstressed oxide over regions roughly 20–50 nm across were also found

Modulation of endoglin expression in islets of langerhans by VEGF reveals a novel regulator of islet endothelial cell function

BACKGROUND: Endoglin/CD105 is an auxiliary receptor for transforming growth factor-β with established roles in vascular remodelling. It has recently been shown that heterozygous endoglin deficiency in mice decreases insulin secretion in an animal model of obesity, highlighting a potential role for endoglin in the regulation of islet function. We have previously identified two different populations of endoglin expressing cells in human and mouse islets which are: (i) endothelial cells (ECs) and (ii) islet mesenchymal stromal cells. The contribution of islet EC endoglin expression to islet development and sensitivity to VEGF is unknown and is the focus of this study. RESULTS: In vitro culture of mouse islets with VEGF164 for 48 h increased endoglin mRNA levels above untreated controls but VEGF did not modulate VEGFR2, CD31 or CD34 mRNA expression or islet viability. Removal of EC-endoglin expression in vivo reduced islet EC area but had no apparent effect on islet size or architecture. CONCLUSION: EC-specific endoglin expression in islets is sensitive to VEGF and plays partial roles in driving islet vascular development, however such regulation appears to be distinct to mechanisms required to modulate islet viability and size

Take Me To The Chicken Ball

https://digitalcommons.library.umaine.edu/mmb-vp/6518/thumbnail.jp

Longitudinal Strain Pulse Propagation in Wide Rectangular Bars: Part 2—Experimental Observations and Comparisons With Theory

The plane-stress theory presented in Part 1 is shown to predict qualitatively the warping of plane sections observed in transient fringe patterns obtained using birefringent coatings and in dynamic photoelastic pictures obtained in other investigations. Measurements using conventional techniques are described in which wide rectangular bars were subjected to a longitudinal step-function pressure loading produced by a shock tube. Comparisons show that the gross features of the experimental records for the head of the pulse are qualitatively predicted by the theory. Both theory and experiment show that short-wavelength, second-mode disturbances arrive very early. Experimentally it is observed that these disturbances are accomplished by thickness-mode activity which cannot be accounted for by the plane-stress theory

Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy

Using electron beam evaporation, a Si/CeO2/Si(111) structure has been grown in a molecular beam epitaxy machine. In situ low energy electron diffraction, cross sectional transmission electron microscopy, selected area diffraction, and atomic force microscopy have been used to structurally characterize the overlying silicon layer and show it to be single crystalline and epitaxially oriented. Rutherford backscattering and energy dispersive x-ray analysis have been used to confirm the presence of a continuous 23 Å CeO2 layer at the interface. Rutherford backscattering and x-ray photoemission spectroscopy show an additional presence of cerium both at the exposed silicon surface and incorporated in low levels (~ 1%) within the silicon film, suggesting a growth mechanism with cerium riding atop the silicon growth front leaving behind small amounts of cerium incorporated in the growing silicon crystal

Control theory for principled heap sizing

We propose a new, principled approach to adaptive heap sizing based on control theory. We review current state-of-the-art heap sizing mechanisms, as deployed in Jikes RVM and HotSpot. We then formulate heap sizing as a control problem, apply and tune a standard controller algorithm, and evaluate its performance on a set of well-known benchmarks. We find our controller adapts the heap size more responsively than existing mechanisms. This responsiveness allows tighter virtual machine memory footprints while preserving target application throughput, which is ideal for both embedded and utility computing domains. In short, we argue that formal, systematic approaches to memory management should be replacing ad-hoc heuristics as the discipline matures. Control-theoretic heap sizing is one such systematic approach