Semiclassical theory of weak antilocalization and spin relaxation in ballistic quantum dots

We develop a semiclassical theory for spin-dependent quantum transport in ballistic quantum dots. The theory is based on the semiclassical Landauer formula, that we generalize to include spin-orbit and Zeeman interaction. Within this approach, the orbital degrees of freedom are treated semiclassically, while the spin dynamics is computed quantum mechanically. Employing this method, we calculate the quantum correction to the conductance in quantum dots with Rashba and Dresselhaus spin-orbit interaction. We find a strong sensitivity of the quantum correction to the underlying classical dynamics of the system. In particular, a suppression of weak antilocalization in integrable systems is observed. These results are attributed to the qualitatively different types of spin relaxation in integrable and chaotic quantum cavities.Comment: 20 page

NN potentials from inverse scattering in the J-matrix approach

An approximate inverse scattering method [7,8] has been used to construct separable potentials with the Laguerre form factors. As an application, we invert the phase shifts of proton-proton in the $^1S_0$ and $^3P_2-^3F_2$ channels and neutron-proton in the $^3S_1-^3D_1$ channel elastic scattering. In the latter case the deuteron wave function of a realistic $np$ potential was used as input.Comment: LaTex2e, 17 pages, 3 Postscript figures; corrected typo

A Discrete Version of the Inverse Scattering Problem and the J-matrix Method

The problem of the Hamiltonian matrix in the oscillator and Laguerre basis construction from the S-matrix is treated in the context of the algebraic analogue of the Marchenko method.Comment: 11 pages. The Laguerre basis case is adde

Inelastic Decay of Electrons in the Shockley-type Metal-Organic Interface States

We present a theoretical study of lifetimes of interface states (IS) on metal-organic interfaces PTCDA/Ag(111), NTCDA/Ag(111), PFP/Ag(111), and PTCDA/Ag(100), describing and explaining the recent experimental data. By means of unfolding the band structure of one of the interfaces under study onto the Ag(111) Brillouin zone we demonstrate, that the Brillouin zone folding upon organic monolayer deposition plays a minor role in the phase space for electron decay, and hence weakly affects the resulting lifetimes. The presence of the unoccupied molecular states below the IS gives a small contribution to the IS decay rate mostly determined by the change of the phase space of bulk states upon the energy shift of the IS. The calculated lifetimes follow the experimentally observed trends. In particular, we explain the trend of the unusual increase of the IS lifetimes with rising temperature.Comment: 8 pages, 5 figure

Proximity Effect Enhancement Induced by Roughness of SN Interface

Critical temperature reduction $\Delta T_c$ is considered for a thin film of a layered superconductor (S) with a rough surface covered by a thick layer of a normal metal (N). The roughness of the SN interface increases the penetration of electrons from the normal metal into the superconductor and leads to an enhancement of the proximity effect. The value of $\Delta T_c$ induced by the roughness of the SN interface can be much higher than $\Delta T_c$ for a film with a plain surface for an extremely anisotropic layered superconductor with the coherence lengths $\xi_a,\xi_b\gg\xi_c$.Comment: 2 page

Depinning transition of dislocation assemblies: pileup and low-angle grain boundary

We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in non-active slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective line tension, the deformations of a dislocation assembly cannot be described by local elastic interactions with a constant tension or stiffness. A nonlocal elastic kernel results as a consequence of long range interactions between dislocations. In light of this result, we revise statistical depinning theories and find novel results for Zener pinning in grain growth. Finally, we discuss the scaling properties of the dynamics of dislocation assemblies and compare theoretical results with numerical simulations.Comment: 13 pages, 8 figure

Depinning transition of dislocation assemblies: pileup and low-angle grain boundary

We investigate the depinning transition occurring in dislocation assemblies. In particular, we consider the cases of regularly spaced pileups and low angle grain boundaries interacting with a disordered stress landscape provided by solute atoms, or by other immobile dislocations present in non-active slip systems. Using linear elasticity, we compute the stress originated by small deformations of these assemblies and the corresponding energy cost in two and three dimensions. Contrary to the case of isolated dislocation lines, which are usually approximated as elastic strings with an effective line tension, the deformations of a dislocation assembly cannot be described by local elastic interactions with a constant tension or stiffness. A nonlocal elastic kernel results as a consequence of long range interactions between dislocations. In light of this result, we revise statistical depinning theories and find novel results for Zener pinning in grain growth. Finally, we discuss the scaling properties of the dynamics of dislocation assemblies and compare theoretical results with numerical simulations.Comment: 13 pages, 8 figure

Nonlinear resonance in a three-terminal carbon nanotube resonator

The RF-response of a three-terminal carbon nanotube resonator coupled to RF-transmission lines is studied by means of perturbation theory and direct numerical integration. We find three distinct oscillatory regimes, including one regime capable of exhibiting very large hysteresis loops in the frequency response. Considering a purely capacitive transduction, we derive a set of algebraic equations which can be used to find the output power (S-parameters) for a device connected to transmission lines with characteristic impedance $Z_0$.Comment: 16 pages, 8 figure