Finite bias charge detection in a quantum dot

We present finite bias measurements on a quantum dot coupled capacitively to a quantum point contact used as a charge detector. The transconductance signal measured in the quantum point contact at finite dot bias shows structure which allows us to determine the time-averaged charge on the dot in the non-blockaded regime and to estimate the coupling of the dot to the leads.Comment: 6 pages, 4 figure

Time-Resolved Detection of Individual Electrons in a Quantum Dot

We present measurements on a quantum dot and a nearby, capacitively coupled, quantum point contact used as a charge detector. With the dot being weakly coupled to only a single reservoir, the transfer of individual electrons onto and off the dot can be observed in real time in the current signal from the quantum point contact. From these time-dependent traces, the quantum mechanical coupling between dot and reservoir can be extracted quantitatively. A similar analysis allows the determination of the occupation probability of the dot states.Comment: 3 pages, 3 figure

Hyperfine-mediated gate-driven electron spin resonance

An all-electrical spin resonance effect in a GaAs few-electron double quantum dot is investigated experimentally and theoretically. The magnetic field dependence and absence of associated Rabi oscillations are consistent with a novel hyperfine mechanism. The resonant frequency is sensitive to the instantaneous hyperfine effective field, and the effect can be used to detect and create sizable nuclear polarizations. A device incorporating a micromagnet exhibits a magnetic field difference between dots, allowing electrons in either dot to be addressed selectively.Comment: related papers available at http://marcuslab.harvard.ed

In Situ Treatment of a Scanning Gate Microscopy Tip

In scanning gate microscopy, where the tip of a scanning force microscope is used as a movable gate to study electronic transport in nanostructures, the shape and magnitude of the tip-induced potential are important for the resolution and interpretation of the measurements. Contaminations picked up during topography scans may significantly alter this potential. We present an in situ high-field treatment of the tip that improves the tip-induced potential. A quantum dot was used to measure the tip-induced potential.Comment: 3 pages, 1 figure, minor changes to fit published versio

Intrinsic Metastabilities in the Charge Configuration of a Double Quantum Dot

We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of the switching. We present an extension of the canonical double dot theory based on an intrinsic, thermal electron exchange process through the reservoirs, giving excellent agreement with the experiment. The electron spin is randomized by the exchange process, thus facilitating fast, gate-controlled spin initialization. At the same time, this process sets an intrinsic upper limit to the spin relaxation time.Comment: 4 pages, 5 figures (color

Dynamics of Electrons in Graded Semiconductors

I present a theory of electron dynamics in semiconductors with slowly varying composition. I show that the frequency-dependent conductivity, required for the description of transport and optical properties, can be obtained from a knowledge of the band structures and momentum matrix elements of homogeneous semiconductor alloys. New sum rules for the electronic oscillator strengths, which apply within a given energy band or between any two bands, are derived, and a general expression for the width of the intraband absorption peak is given. Finally, the low-frequency dynamics is discussed, and a correspondence with the semiclassical motion is established.Comment: 4 pages, Revte

The Resonant Exchange Qubit

We introduce a solid-state qubit in which exchange interactions among confined electrons provide both the static longitudinal field and the oscillatory transverse field, allowing rapid and full qubit control via rf gate-voltage pulses. We demonstrate two-axis control at a detuning sweet-spot, where leakage due to hyperfine coupling is suppressed by the large exchange gap. A {\pi}/2-gate time of 2.5 ns and a coherence time of 19 {\mu}s, using multi-pulse echo, are also demonstrated. Model calculations that include effects of hyperfine noise are in excellent quantitative agreement with experiment

Imaging a Coupled Quantum Dot - Quantum Point Contact System

We performed measurements on a quantum dot and a capacitively coupled quantum point contact by using the sharp metallic tip of a low-temperature scanning force microscope as a scanned gate. The quantum point contact served as a detector for charges on the dot or nearby. It allowed us to distinguish single electron charging events in several charge traps from charging events on the dot. We analyzed the tip-induced potential quantitatively and found its shape to be independent of the voltage applied to the tip within a certain range of parameters. We estimate that the trap density is below 0.1% of the doping density and that the interaction energy between the quantum dot and a trap is a significant portion of the dot's charging energy. Possibly, such charge traps are the reason for frequently observed parametric charge rearrangements.Comment: 6 pages, 5 figure