114 research outputs found
Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime
In order to achieve polariton lasing at room temperature, a new fabrication
methodology for planar microcavities is proposed: a ZnO-based microcavity in
which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and
in which two dielectric mirrors are used. This approach allows as to
simultaneously obtain a high-quality active layer together with a high photonic
confinement as demonstrated through macro-, and micro-photoluminescence
({\mu}-PL) and reflectivity experiments. A quality factor of 675 and a maximum
PL emission at k=0 are evidenced thanks to {\mu}-PL, revealing an efficient
polaritonic relaxation even at low excitation power.Comment: 12 pages, 3 figure
Valence band offset of the ZnO/AlN heterojunction determined by X-ray photoemission spectroscopy
The valence band offset of ZnO/AlN heterojunctions is determined by high resolution x-ray photoemission spectroscopy. The valence band of ZnO is found to be 0.43±0.17 eV below that of AlN. Together with the resulting conduction band offset of 3.29±0.20 eV, this indicates that a type-II (staggered) band line up exists at the ZnO/AlN heterojunction. Using the III-nitride band offsets and the transitivity rule, the valence band offsets for ZnO/GaN and ZnO/InN heterojunctions are derived as 1.37 and 1.95 eV, respectively, significantly higher than the previously determined values
On the quantum and classical scattering times due to charged dislocations in an impure electron gas
We derive the ratio of transport and single particle relaxation times in
three and two - dimensional electron gases due to scattering from charged
dislocations in semiconductors. The results are compared to the respective
relaxation times due to randomly placed charged impurities. We find that the
ratio is larger than the case of ionized impurity scattering in both three and
two-dimensional electron transport.Comment: 4 pages, 3 figure
ESTUDIO CITOLÓGICO, EXO Y ENDOMORFOLÓGICO EN ATRIPLEX LAMPA (MOQ.) D. DIETR. (CHENOPODIACEAE)
Atriplex lampa (Moq.) D. Dietr. is a halophytic, dioecious shrub native to Patagonia,Argentina. Although relatively neglected byscience, it is important for sand-stabilizationand for biomass and fodder production dueto its nutritional characteristics and acceptable percentage of gross protein.The objective of this study is to provide cytological and morpho-anatomical informationabout A. lampa, which could be useful whenapplied in recovery and repopulation plansintending to use this species in areas degraded by petroleum industry activity.Natural populations in the Province of Chubut (45°-46° S; 67°- 68° W), Argentina, werestudied. Karyotypes and meiotic behaviorwere analyzed according to conventionalprotocols, as were anatomical and morphological comparisons. Analysis of variancewas used to test morphometrical differencesbetween populations and cytotypes. Voucherspecimens are deposited at the Facultad deCiencias Naturales, Universidad NacionalSan Juan Bosco de Patagonia, Argentina.Our results show that A. lampa has two cytotypes: diploids (2n = 2x = 18) and tetraploids(2n = 4x = 36). The stems and roots haveanomalous secondary growth, and the leavesare amphistomatic, with a Kranz structure,and are covered with dense glandular trichomes. The leaves and fruit bracteoles aredifferent sizes in the two cytotypes.Atriplex lampa (Moq.) D. Dietr. es una especie que habita en ambientes áridos y suelossalinos, produce considerable cantidad debiomasa, aportando forraje de buena calidaden épocas de receso invernal. En Argentina, Provincia de Chubut, Departamento deEscalante, se observaron dos poblacionesnaturales fenotÃpicamente diferentes.El objetivo de este trabajo fue estudiarlascitológica, exo y endomorfológicamente afin de comprobar si las variantes fenotÃpicas responden a variaciones en el númerosomático.Por primera vez se presenta el análisiscariotÃpico y meiótico de la especie.Hasta el momento la especie era descritacomo diploide, 2 n = 2 x = 18, en este estudiose encontró un citotipo tetraploide 2n = 4x =36. Las diferencias entre ambos citotipos sebasan en el número somático, la morfologÃacromosómica, el comportamiento meiótico,el porte arbustivo y el tamaño de hojas ybractéolas fructÃferas.La fórmula cariotÃpica, longitud genómicatotal y rango de variación en longitud cromosómica no se alejan de los valores observados para otras especies del género.Durante la meiosis se observa formaciónde tetravalentes, evidenciando alta homologÃa entre los genomas lo que justifica suorigen autopoliploide, que aún no alcanzóla diploidización. La formación de puentesy fragmentos durante anafase I sugiere laexistencia de dos pares de cromosomashomólogos, heterocigóticos estructurales,para inversiones paracéntricas. La presenciade puentes en la segunda división indicarecombinación meiótica en un amplio segmento invertido.Las observaciones y mediciones exomorfológicas dan resultados significativos para eltetraploide. Los caracters endomorfológicosse mantienen constantes en ambos niveles deploidÃa al igual que el espesor de la hoja
Atomic resolution interface structure and vertical current injection in highly uniform heterojunctions with bulk GaN
The integration of two-dimensional with recently attracted
significant interest for future electronic/optoelectronic applications.
However, the reported studies have been mainly carried out using
heteroepitaxial templates on sapphire substrates, whereas the growth of
on low-dislocation-density bulk GaN can be strategic for the
realization of truly vertical devices. In this paper, we report the growth of
ultrathin films, mostly composed by single-layers (), onto
homoepitaxial on bulk substrates by sulfurization of a
pre-deposited film. Highly uniform and conformal coverage of the
surface was demonstrated by atomic force microscopy, while very low
tensile strain (0.05%) and a significant -type doping () of was evaluated by Raman mapping. Atomic
resolution structural and compositional analyses by aberration-corrected
electron microscopy revealed a nearly-ideal van der Waals interface between
and the -terminated crystal, where only the topmost
atoms are affected by oxidation. Furthermore, the relevant lattice parameters
of the heterojunction, such as the van der Waals gap, were
measured with high precision. Finally, the vertical current injection across
this 2D/3D heterojunction has been investigated by nanoscale current-voltage
analyses performed by conductive atomic force microscopy, showing a rectifying
behavior with an average turn-on voltage under forward bias,
consistent with the expected band alignment at the interface between
doped and .Comment: 21 pages, 6 figure
Western European Populations of the Ichneumonid Wasp Hyposoter didymator Belong to a Single Taxon
Hyposoter didymator (Hymenoptera, Ichneumonidae) is a generalist solitary endoparasitoid of noctuid larvae. In the present work, we tested whether populations of H. didymator were divided in several genetically distinct taxa as described for many other generalist parasitoid species, and whether differences in H. didymator parasitism rates were explained by the insect host species and/or by the plant on which these hosts were feeding on. The genetic analysis of natural populations collected in different regions in France and Spain on seven different insect hosts and seven different host plants (775 individuals) showed that H. didymator populations belong to a unique single taxon. However, H. didymator seems to be somewhat specialized. Indeed, in the fields it more often parasitized Helicoverpa armigera compared to the other host species collected in the present work. Also, H. didymator parasitism rates in field conditions and semi-field experimental studies were dependent on the host plants on which H. armigera larvae are feeding. Still, H. didymator can occur occasionally on non-preferred noctuid species. One hypothesis explaining the ability of H. didymator to switch hosts in natura could be related to fluctuating densities of the preferred host over the year; this strategy would allow the parasitoid to avoid seasonal population collapses
Cleaved-facet violet laser diodes with lattice-matched Al0.82In0.18N/GaN multilayers as n-cladding
Electrically injected, edge-emitting cleaved-facet violet laser diodes were realized using a 480 nm thick lattice matched Si doped Al0.82In0.18N/GaN multilayer as the cladding on the n-side of the waveguide. Far-field measurements verify strong mode confinement to the waveguide. An extra voltage is measured and investigated using separate mesa structures with a single AlInN insertion. This showed that the electron current has a small thermally activated shunt resistance with a barrier of 0.135 eV and a current which scales according to V-n, where n similar to 3 at current densities appropriate to laser operation. (C) 2011 American Institute of Physics. (doi:10.1063/1.3589974
Extreme ultraviolet detection using AlGaN-on-Si inverted Schottky photodiodes
We report on the fabrication of aluminum gallium nitride (AlGaN) Schottky diodes for extreme ultraviolet (EUV) detection. AlGaN layers were grown on silicon wafers by molecular beam epitaxy with the conventional and inverted Schottky structure, where the undoped, active layer was grown before or after the n-doped layer, respectively. Different current mechanisms were observed in the two structures. The inverted Schottky diode was designed for the optimized backside sensitivity in the hybrid imagers. A cut-off wavelength of 280 nm was observed with three orders of magnitude intrinsic rejection ratio of the visible radiation. Furthermore, the inverted structure was characterized using a EUV source based on helium discharge and an open electrode design was used to improve the sensitivity. The characteristic He I and He II emission lines were observed at the wavelengths of 58.4 nm and 30.4 nm, respectively, proving the feasibility of using the inverted layer stack for EUV detectio
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates
Dislocation-free high-quality AlGaN/GaN heterostructures have been grown by molecular-beam epitaxy on semi-insulating bulk GaN substrates. Hall measurements performed in the 300 K–50 mK range show a low-temperature electron mobility exceeding 60 000 cm2/V s for an electron sheet density of 2.4×1012 cm−2. Magnetotransport experiments performed up to 15 T exhibit well-defined quantum Hall-effect features. The structures corresponding to the cyclotron and spin splitting were clearly resolved. From an analysis of the Shubnikov de Hass oscillations and the low-temperature mobility we found the quantum and transport scattering times to be 0.4 and 8.2 ps, respectively. The high ratio of the scattering to quantum relaxation time indicates that the main scattering mechanisms, at low temperatures, are due to long-range potentials, such as Coulomb potentials of ionized impurities
GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates
We report on AlGaN/GaN heterostructures and heterostructurefield-effect transistors(HFETs) fabricated on high-pressure-grown bulk GaN substrates. The 2delectron gas channel exhibits excellent electronic properties with room-temperature electron Hall mobility as high as μ=1650 cm2/V s combined with a very large electron sheet density ns≈1.4×1013 cm−2.The HFET devices demonstrated better linearity of transconductance and low gate leakage, especially at elevated temperatures. We also present the comparative study of high-current AlGaN/GaN HFETs(nsμ\u3e2×1016 V−1 s−1) grown on bulk GaN, sapphire, and SiC substrates under the same conditions. We demonstrate that in the high-power regime, the self-heating effects, and not a dislocation density, is the dominant factor determining the device behavior
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