On The Mobile Behavior of Solid 4^4He at High Temperatures

We report studies of solid helium contained inside a torsional oscillator, at temperatures between 1.07K and 1.87K. We grew single crystals inside the oscillator using commercially pure $^4$He and $^3$He-$^4$He mixtures containing 100 ppm $^3$He. Crystals were grown at constant temperature and pressure on the melting curve. At the end of the growth, the crystals were disordered, following which they partially decoupled from the oscillator. The fraction of the decoupled He mass was temperature and velocity dependent. Around 1K, the decoupled mass fraction for crystals grown from the mixture reached a limiting value of around 35%. In the case of crystals grown using commercially pure $^4$He at temperatures below 1.3K, this fraction was much smaller. This difference could possibly be associated with the roughening transition at the solid-liquid interface.Comment: 15 pages, 6 figure

A Field Effect Transitor based on the Mott Transition in a Molecular Layer

Here we propose and analyze the behavior of a FET--like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal--insulator transition. The device has FET-like characteristics with a low ``ON'' impedance and high ``OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed.Comment: Revtex 11pages, Figures available upon reques

Stochastic Tunneling of Two Mutations in a Population of Cancer Cells

Cancer initiation, progression, and the emergence of drug resistance are driven by specific genetic and/or epigenetic alterations such as point mutations, structural alterations, DNA methylation and histone modification changes. These alterations may confer advantageous, deleterious or neutral effects to mutated cells. Previous studies showed that cells harboring two particular alterations may arise in a fixed-size population even in the absence of an intermediate state in which cells harboring only the first alteration take over the population; this phenomenon is called stochastic tunneling. Here, we investigated a stochastic Moran model in which two alterations emerge in a cell population of fixed size. We developed a novel approach to comprehensively describe the evolutionary dynamics of stochastic tunneling of two mutations. We considered the scenarios of large mutation rates and various fitness values and validated the accuracy of the mathematical predictions with exact stochastic computer simulations. Our theory is applicable to situations in which two alterations are accumulated in a fixed-size population of binary dividing cells

Electronic Orders Induced by Kondo Effect in Non-Kramers f-Electron Systems

This paper clarifies the microscopic nature of the staggered scalar order, which is specific to even number of f electrons per site. In such systems, crystalline electric field (CEF) can make a singlet ground state. As exchange interaction with conduction electrons increases, the CEF singlet at each site gives way to Kondo singlets. The collective Kondo singlets are identified with itinerant states that form energy bands. Near the boundary of itinerant and localized states, a new type of electronic order appears with staggered Kondo and CEF singlets. We present a phenomenological three-state model that qualitatively reproduces the characteristic phase diagram, which have been obtained numerically with use of the continuous-time quantum Monte Carlo combined with the dynamical mean-field theory. The scalar order observed in PrFe_4P_{12} is ascribed to this staggered order accompanying charge density wave (CDW) of conduction electrons. Accurate photoemission and tunneling spectroscopy should be able to probe sharp peaks below and above the Fermi level in the ordered phase.Comment: 7 pages, 8 figure

On the origin of multiple ordered phases in PrFe4P12

The nature of multiple electronic orders in skutterudite PrFe_4P_{12} is discussed on the basis of a model with antiferro-quadrupole (AFQ) interaction of \Gamma_3 symmetry. The high-field phase can be reproduced qualitatively provided (i) ferro-type interactions are introduced between the dipoles as well as between the octupoles of localized f-electrons, and (ii) separation is vanishingly small between the \Gamma_1-\Gamma_4^{(1)} crystalline electric field (CEF) levels. The high-field phase can have either the same ordering vector q=(1,0,0) as in the low-field phase, or a different one q=0 depending on the parameters. In the latter case, distortion of the crystal perpendicular to the (111) axis is predicted. The corresponding anomaly in elastic constants should also appear. The electrical resistivity is calculated with account of scattering within the CEF quasi-quartet. It is found that the resistivity as a function of the direction of magnetic field shows a sharp maximum around the (111) axis at low temperatures because of the level crossing.Comment: 16 pages, 5 figure

Quantitative analysis of electronic transport through weakly-coupled metal/organic interfaces

Using single-crystal transistors, we have performed a systematic experimental study of electronic transport through oxidized copper/rubrene interfaces as a function of temperature and bias. We find that the measurements can be reproduced quantitatively in terms of the thermionic emission theory for Schottky diodes, if the effect of the bias-induced barrier lowering is included. Our analysis emphasizes the role of the coupling between metal and molecules, which in our devices is weak due to the presence of an oxide layer at the surface of the copper electrodes.Comment: 4 pages, 3 figure

Role of p-f Hybridization in the Metal-Non-Metal Transition of PrRu4P12

Electronic state evolution in the metal-non-metal transition of PrRu4P12 has been studied by X-ray and polarized neutron diffraction experiments. It has been revealed that, in the low-temperature non-metallic phase, two inequivalent crystal-field (CF) schemes of Pr3+ 4f^2 electrons with Gamma_1 and Gamma_4^(2) ground states are located at Pr1 and Pr2 sites forming the bcc unit cell surrounded by the smaller and larger cubic Ru-ion sublattices, respectively. This modulated electronic state can be explained by the p-f hybridization mechanism taking two intermediate states of 4f^1 and 4f^3. The p-f hybridization effect plays an important role for the electronic energy gain in the metal-non-metal transition originated from the Fermi surface nesting.Comment: 5 pages, 5 figures. Accepted by J. Phys. Soc. Jp

Microscopic Mechanism for Staggered Scalar Order in PrFe4P12

A microscopic model is proposed for the scalar order in PrFe4P12 where f2 crystalline electric field (CEF) singlet and triplet states interact with two conduction bands. By combining the dynamical mean-field theory and the continuous-time quantum Monte Carlo, we obtain an electronic order with staggered Kondo and CEF singlets with the total conduction number being unity per site. The ground state becomes semimetallic provided that the two conduction bands have different occupation numbers. This model naturally explains experimentally observed properties in the ordered phase of PrFe4P12 such as the scalar order parameter, temperature dependence of the resistivity, field-induced staggered moment, and inelastic features in neutron scattering. The Kondo effect plays an essential role for ordering, in strong contrast with ordinary magnetic orders by the RKKY interaction.Comment: 4 pages, 4figure

Infrared spectra of one- and two-dimensional fullerene polymer structures: RbC60 and rhombohedral C-60

We compare the infrared spectra of two types of fullerene polymers: the linear-chain RbC60 and the two-dimensional pressure-polymerized rhombohedral C-60. Both the splitting of the F-1u modes and the structure of newly activated Lines are in agreement with fully ordered structures of molecular symmetry D-2h and D-3d, respectively