SEARCH FOR GRAVITATIONALLY REDSHIFTED 2.2 MEV LINE FROM 4U 1820-30

We have analyzed 1.7 Ms of the INTEGRAL data of the Low Mass X-Ray Binary (LMXB) 4U 1820-30 and searched for the redshifted 2.2 MeV neutron capture gamma-ray line. This source is unique in that it is thought to be accreting pure Helium and might be a powerful 2.2 MeV line source. If detected, this line would strongly constrain the neutron star equation of state, motivating this search. The line is expected to be redshifted to 1.30-1.72 MeV so we scanned the 1-2 MeV region. Although we failed to detect the redshifted 2.2 MeV line, mainly due to the intense background noise to which INTEGRAL is exposed, we placed upper limits on the source’s flux for different line widths. We plan to do analysis on the rest of the data (over 8 Ms) in the future

Growth of high crystalline quality semi-insulating GaN layers for high electron mobility transistor applications

Cataloged from PDF version of article.Semi-insulating character ( sheet resistivity of 3.26 x 10(11) ohm/sq ) of thick GaN layers was developed for AlGaN/GaN high electron mobility transistor ( HEMT ) applications on an AlN buffer layer. Electrical and structural properties were characterized by a dark current-voltage transmission line model, x-ray diffraction, and atomic force microscope measurements. The experimental results showed that compared to semi-insulating GaN grown on low temperature GaN nucleation, the crystal quality as well as surface morphology were remarkably improved. It was ascribed to the utilization of a high quality insulating AlN buffer layer and the GaN initial coalescence growth mode. Moreover, the significant increase of electron mobility in a HEMT structure suggests that this is a very promising method to obtain high performance AlGaN/GaN HEMT structures on sapphire substrates. (c) 2006 American Institute of Physics

Collaboration Versus Cheating

We outline how we detected programming plagiarism in an introductory online course for a master's of science in computer science program, how we achieved a statistically significant reduction in programming plagiarism by combining a clear explanation of university and class policy on academic honesty reinforced with a short but formal assessment, and how we evaluated plagiarism rates before SIGand after implementing our policy and assessment.Comment: 7 pages, 1 figure, 5 tables, SIGCSE 201

Chemical abundances of the metal-poor horizontal-branch stars CS 22186-005 and CS 30344-033

We report on a chemical-abundance analysis of two very metal-poor horizontal-branch stars in the Milky Way halo: CS 22186-005 ([Fe/H]=-2.70) and CS 30344-033 ([Fe/H]=-2.90). The analysis is based on high-resolution spectra obtained at ESO, with the spectrographs HARPS at the 3.6 m telescope, and UVES at the VLT. We adopted one-dimensional, plane-parallel model atmospheres assuming local thermodynamic equilibrium. We derived elemental abundances for 13 elements for CS 22186-005 and 14 elements for CS 30344-033. This study is the first abundance analysis of CS 30344-033. CS 22186-005 has been analyzed previously, but we report here the first measurement of nickel (Ni; Z = 28) for this star, based on twenty-two NiI lines ([Ni/Fe]=-0.21$\pm$0.02); the measurement is significantly below the mean found for most metal-poor stars. Differences of up to 0.5 dex in [Ni/Fe] ratios were determined by different authors for the same type of stars in the literature, which means that it is not yet possible to conclude that there is a real intrinsic scatter in the [Ni/Fe] ratios. For the other elements for which we obtained estimates, the abundance patterns in these two stars match the Galactic trends defined by giant and turnoff stars well. This confirms the value of horizontal-branch stars as tracers of the chemical properties of stellar populations in the Galaxy. Our radial velocities measurements for CS 22186-005 differ from previously published measurements by more than the expected statistical errors. More measurements of the radial velocity of this star are encouraged to confirm or refute its radial velocity variability

Co doping induced structural and optical properties of sol-gel prepared ZnO thin films

Cataloged from PDF version of article.The preparation conditions for Co doping process into the ZnO structure were studied by the ultrasonic spray pyrolysis technique. Structural and optical properties of the Co:ZnO thin films as a function of Co concentrations were examined. It was observed that hexagonal wurtzite structure of ZnO is dominant up to the critical value, and after the value, the cubic structural phase of the cobalt oxide appears in the X-ray diffraction patterns. Every band-edge of Co:ZnO films shifts to the lower energies and all are confirmed with the PL measurements. Co substitution in ZnO lattice has been proved by the optical transmittance measurement which is observed as the loss of transmission appearing in specific region due to Co2+ characteristic transitions. © 2014 Elsevier B.V. All rights reserved

Consumer protection in Turkey: law, informality and the role of the media. Monash University, Workplace and Corporate Law Research Group, Working Paper No. 21

This report is part of a University of Oxford John Fell funded collaborative project: Informality and the Media in Consumer Protection in Emerging Economies. This pilot project seeks to shed light upon consumer complaint behaviour through social media in emerging economies

Metal–semiconductor–metal photodetector on as-deposited TiO2 thin films on sapphire substrate

Cataloged from PDF version of article.TiO2 thin films are prepared on c-plane sapphire substrates by the RF magnetron sputtering method. The performance of the Pt contact metal–semiconductor–metal (MSM) photodetector fabricated on as-deposited films is studied. The dark current density and the responsivity obtained were 1.57 × 10−9 A/cm2 at 5 V bias and 1.73 A/W at 50 V bias, respectively. Breakdown is not observed up to 50 V bias. Rise and fall times for the photocurrent were 7 and 3 s, respectively. Our results show that high quality MSM photodetectors can be fabricated without high temperature and complicated fabrication steps

Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p 3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO2/Si substrate

Cataloged from PDF version of article.ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO2 on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100V bias, corresponding to 100 pA/cm(2) current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation. (C) 2014 AIP Publishing LLC