Dielectric functions and optical constants modeling for CuIn 3Se5 and CuIn5Se8

The complex dielectric functions, ε (ω) = ε1 (ω) +i ε2 (ω), of CuIn3Se5 and CuIn5Se8 crystals with different Cu contents have been determined in the 0.8-4.7 eV photon energy range by using spectroscopic ellipsometry. The spectral dependence of the real, ε1 (ω), and imaginary, ε2 (ω), parts of ε (ω), as well as the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity, has been modeled by using a modification of Adachi's model. The results are in excellent agreement with the experimental data over the entire range of photon energies. The model parameters, including the energies corresponding to the lowest direct gap, E0, and to higher critical points, have been determined by using the simulated annealing algorithm. © 2008 American Institute of Physics.Peer Reviewe

Non-uniform carrier density in Cd3_3As2_2 evidenced by optical spectroscopy

We report the detailed optical properties of Cd$_3$As$_2$ crystals in a wide parameter space: temperature, magnetic field, carrier concentration and crystal orientation. We investigate high-quality crystals synthesized by three different techniques. In all the studied samples, independently of how they were prepared and how they were treated before the optical experiments, our data indicate conspicuous fluctuations in the carrier density (up to 30%). These charge puddles have a characteristic scale of 100 $\mu$m, they become more pronounced at low temperatures, and possibly, they become enhanced by the presence of crystal twinning. The Drude response is characterized by very small scattering rates ($\sim 1$ meV) for as-grown samples. Mechanical treatment, such as cutting or polishing, influences the optical properties of single crystals, by increasing the Drude scattering rate and also modifying the high frequency optical response. Magneto-reflectivity and Kerr rotation are consistent with electron-like charge carriers and a spatially non-uniform carrier density.Comment: Accepted in Physical Review

Preparation and optical characterization of Cu2ZnGeSe4 thin films

Cu2ZnGeSe4 (CZGSe) films have been fabricated by ion beam sputtering onto glass substrates at a substrate temperature of 300 and 420 K. CZGSe films were characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy and by the method of normal incidence transmittance and reflectance. XRD studies reveal an improved crystallinity of the polycrystalline CZGSe films with tetragonal structure when the substrate temperature was increased. The refraction index and extinction coefficient were extracted from the optical measurements. Spectral dependence of the absorption coefficient and the energy band gaps values of CZGSe films were also determinedFinancial supports from IRSES PVICOKEST 269167, MICINN projects (KEST-PV; ENE2010- 21541-C03-01/-02/-03) and FRCFB 13.820.05.11/BF projects are acknowledged. RC also acknowledges financial support from Spanish MINECO within the program Ramón y Cajal (RYC-2011-08521

Optical constants of Cu2ZnGeS4 bulk crystals

The dielectric functions of Cu2 ZnGeS4 bulk crystals grown by the Bridgman method were measured over the energy range 1.4 to 4.7 eV at room temperature using variable angle spectroscopic ellipsometry. The observed structures in the dielectric functions were adjusted using the Adachi's model and attributed to interband transitions E0, E1A, and E1B at :(000), N (A):2π /a (0.5 0.5 0.5), and T (Z):2π /a (0 0 0.5) points of the first Brillouin zone, respectively. The model parameters (threshold energy, strength, and broadening) have been determined using the simulated annealing algorithm. The decrease in the first gap, E0, has been attributed to a higher Ge-S hybridization. The spectral dependence of the complex refractive index, the absorption coefficient, and the normal-incidence reflectivity were also derived. © 2010 American Institute of Physics.Peer Reviewe

Spectroscopic ellipsometry study of Cu2ZnSnS4 bulk poly-crystals

The linear optical properties of Cu2ZnSnS4 bulk poly-crystals have been investigated using spectroscopic ellipsometry in the range of 1.2-4.6 eV at room temperature. The characteristic features identified in the optical spectra are explained by using the Adachi analytical model for the interband transitions at the corresponding critical points in the Brillouin zone. The experimental data have been modeled over the entire spectral range taking into account the lowest E0 transition near the fundamental absorption edge and E1A and E1B higher energy interband transitions. In addition, the spectral dependences of the refractive index, extinction coefficient, absorption coefficient, and normal-incidence reflectivity values have been accurately determined and are provided since they are essential data for the design of Cu2ZnSnS4 based optoelectronic devicesThe research leading to the presented results was partially supported by the European Project INFINITE-CELL (Ref. H2020-MSCA-RISE-2017-777968, 2017–2021, www.infinitecell.eu) and the Spanish MINECO Projects “WINCOST” (ENE2016-80788-C5-2-R) and PHOTOMANA (TEC2015- 69916-C2-1-R). The authors from the Institute of Applied Physics appreciate the financial support from STCU 6224 and from the Institutional Project No. CSSDT 15.817.02.04

Hopping magnetotransport of the band-gap tuningCu2Zn(SnxGe1-x)Se4 crystals

Resistivity, (T, x), of Cu2Zn(SnxGe1-x)Se4 (CZTGeSe) single crystals with x = 0 1 exhibits an activated character within the whole investigated temperature range between T ~ 10 320 K, attaining a minimum at x = 0.5. Magnetoresistance (MR) of CZTGeSe with x = 0.3, 0.5 and 0.7 is positive (pMR) in all magnetic fields of B up to 20 T at any T between ~ 40 320 K, whereas MR of samples with x = 0 and 1 contains a negative contribution (nMR). The dependence of (T) at B = 0 gives evidence for a nearest-neighbor hopping (NNH) conductivity in high-temperature intervals within T ~ 200 320 K depending on x, followed by the Mott variable-range hopping (VRH) charge transfer with lowering temperature. The MR law of ln (B) B2 is observed in both hopping conduction regimes above, provided that the nMR contribution is absent or saturated. Analysis of the (T) and MR data has yielded the values of the NNH activation energy and the VRH characteristic temperature, as well as those of the acceptor band width, the acceptor concentration, the localization radii of holes and the density of the localized states (DOS) at the Fermi level. All the parameters above exhibit a systematic non-monotonous dependence on x. Their extremums, corresponding to the minimum of a lattice disorder along with the maximum of DOS and of the defect concentration, as well as a highest proximity to the metal-insulator transition, suggest an optimum for electronic properties composition of CZTGeSe near x ~ 0.6 0.7

Mechanisms of charge transfer and electronic properties of Cu2ZnGeS4 from investigations of the high field magnetotransport

Recent development of the thin film solar cells, based on quaternary compounds, has been focused on the Ge contain compounds and their solid solutions. However, for effective utilization of Cu2ZnGeS4, deeper investigations of its transport properties are required. In the present manuscript, we investigate resistivity, amp; 961; T , magnetoresistance and Hall effect in p type Cu2ZnGeS4 single crystals in pulsed magnetic fields up to 20 T. The dependence of amp; 961; T in zero magnetic field is described by the Mott type of the variable range hopping VRH charge transfer mechanism within a broad temperature interval of 100 200 K. Magnetoresistance contains the positive and negative components, which are interpreted by the common reasons of doped semiconductors. On the other hand, a joint analysis of the resistivity and magnetoresistance data has yielded series of important electronic parameters and permitted specification of the Cu2ZnGeS4 conductivity mechanisms outside the temperature intervals of the Mott VRH conduction. The Hall coefficient is negative, exhibiting an exponential dependence on temperature, which is quite close to that of amp; 961; T . This is typical of the Hall effect in the domain of the VRH charge transfer

Magneto-optical signature of massless Kane electrons in Cd3As2

We report on optical reflectivity experiments performed on Cd3As2 over a broad range of photon energies and magnetic fields. The observed response clearly indicates the presence of 3D massless charge carriers. The specific cyclotron resonance absorption in the quantum limit implies that we are probing massless Kane electrons rather than symmetry-protected 3D Dirac particles. The latter may appear at a smaller energy scale and are not directly observed in our infrared experiments.Comment: 5 pages, 4 figures + supplementary materials (17 pages), to be published in Phys. Rev. Let

Energy scale of Dirac electrons in Cd3As2

Cadmium arsenide (Cd3As2) has recently became conspicuous in solid-state physics due to several reports proposing that it hosts a pair of symmetry-protected 3D Dirac cones. Despite vast investigations, a solid experimental insight into the band structure of this material is still missing. Here we fill one of the existing gaps in our understanding of Cd3As2, and based on our Landau-level spectroscopy study, we provide an estimate for the energy scale of 3D Dirac electrons in this system. We find that the appearance of such charge carriers is limited-contrary to a widespread belief in the solid-state community-to a relatively small energy scale (below 40 meV)