Characterization of Fe-N nanocrystals and nitrogen–containing inclusions in (Ga,Fe)N thin films using transmission electron microscopy

Nanometric inclusions filled with nitrogen, located adjacent to FenN (n¼3 or 4) nanocrystals within (Ga,Fe)N layers, are identified and characterized using scanning transmission electron microscopy (STEM) and electron energy-loss spectroscopy (EELS). High-resolution STEM images reveal a truncation of the Fe-N nanocrystals at their boundaries with the nitrogen-containing inclusions. A controlled electron beam hole drilling experiment is used to release nitrogen gas from an inclusion in situ in the electron microscope. The density of nitrogen in an individual inclusion is measured to be 1.460.3 g/cm3. These observations provide an explanation for the location of surplus nitrogen in the (Ga,Fe)N layers, which is liberated by the nucleation of FenN (n>1) nanocrystals during growth

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Van Aken, B.B.. No especifíca;Fil: Soppe, W.J.. No especifíca;Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemani

Electron energy-loss spectroscopy of boron-doped layers in amorphous thin film silicon solar cells

Electron energy-loss spectroscopy (EELS) is used to study p-doped layers in n-i-p amorphous thin film Si solar cells grown on steel foil substrates. For a solar cell in which an intrinsic amorphous hydrogenated Si (a-Si-H) layer is sandwiched between 10-nm-thick n-doped and p-doped a-Si:H layers, we assess whether core-loss EELS can be used to quantify the B concentration. We compare the shape of the measured B K edge with real space ab initio multiple scattering calculations and show that it is possible to separate the weak B K edge peak from the much stronger Si L edge fine structure by using log-normal fitting functions. The measured B concentration is compared with values obtained from secondary ion mass spectrometry, as well as with EELS results obtained from test samples that contain ∼200-nm-thick a-Si:H layers co-doped with B and C. We also assess whether changes in volume plasmon energy can be related to the B concentration and/or to the density of the material and whether variations of the volume plasmon line-width can be correlated with differences in the scattering of valence electrons in differently doped a-Si:H layers.Fil: Duchamp, M.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Boothroyd, C.B.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; AlemaniaFil: Moreno, Mario Sergio Jesus. Comisión Nacional de Energía Atómica. Centro Atómico Bariloche; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Van Aken, B.B.. No especifíca;Fil: Soppe, W.J.. No especifíca;Fil: Dunin-Borkowski, R.E.. Helmholtz Gemeinschaft. Forschungszentrum Jülich; Alemani

MoRe/YBCO Josephson junctions and π-loops

We have developed Josephson junctions between the d-wave superconductor YBa2Cu3O7-x (YBCO) and the s-wave Mo0.6Re0.4 (MoRe) alloy superconductor (ds-JJs). Such ds Josephson junctions are of interest for superconducting electronics making use of incorporated π-phase shifts. The I(V)-characteristics of the ds-JJs demonstrate a twice larger critical current along the [100] axis of the YBCO film compared to similarly-oriented ds-JJs made with a Nb top electrode. The characteristic voltage I c R n of the YBCO-Au-MoRe ds-JJs is 750 μV at 4.2 K. The ds-JJs that are oriented along the [100] or [010] axes of the YBCO film exhibit a 200 times higher critical current than similar ds-JJs oriented along the [110] axis of the same YBCO film. A critical current density J c = 20 kA cm-2 at 4.2 K was achieved. Different layouts of π-loops based on the novel ds-JJs were arranged in various mutual coupling configurations. Spontaneous persistent currents in the π-loops were investigated using scanning SQUID microscopy. Magnetic states of the π-loops were manipulated by currents in integrated bias lines. Higher flux states up to ±2.5Φ0 were induced and stabilized in the π-loops. Crossover temperatures between thermally activated and quantum tunneling switching processes in the ds-JJs were estimated. The demonstrated ability to stabilise and manipulate states of π-loops paves the way towards new computing concepts such as quantum annealing computing.</p

Lorentz near-field electron ptychography

Over the past few years, electron ptychography has drawn considerable attention for its ability to recover high contrast and ultra-high resolution images without the need for high quality electron optics. In this Letter, we focus on electron ptychography's other potential benefits: quantitatively mapping phase variations resulting from magnetic and electric fields over extended fields of view. To this end, we propose an implementation of near-field ptychography that employs an amplitude mask located in the electron microscope's condenser aperture plane. We demonstrate the capabilities of our method by imaging a magnetic Permalloy sample and compare our results with those of off-axis electron holography

Efficient large field of view electron phase imaging using near-field electron ptychography with a diffuser

Most implementations of ptychography on the electron microscope operate in scanning transmission (STEM) mode, where a small focussed probe beam is rapidly scanned across the sample. In this paper we introduce a different approach based on near-field ptychography, where the focussed beam is replaced by a wide-field, structured illumination, realised through a purpose-designed etched Silicon Nitride window. We show that fields of view as large as 100 μm2 can be imaged using the new approach, and that quantitative electron phase images can be reconstructed from as few as nine near-field diffraction pattern measurements

Automated discrete electron tomography – Towards routine high-fidelity reconstruction of nanomaterials

Electron tomography is an essential imaging technique for the investigation of morphology and 3D structure of nanomaterials. This method, however, suffers from well-known missing wedge artifacts due to a restricted tilt range, which limits the objectiveness, repeatability and efficiency of quantitative structural analysis. Discrete tomography represents one of the promising reconstruction techniques for materials science, potentially capable of delivering higher fidelity reconstructions by exploiting the prior knowledge of the limited number of material compositions in a specimen. However, the application of discrete tomography to practical datasets remains a difficult task due to the underlying challenging mathematical problem. In practice, it is often hard to obtain consistent reconstructions from experimental datasets. In addition, numerous parameters need to be tuned manually, which can lead to bias and non-repeatability. In this paper, we present the application of a new iterative reconstruction technique, named TVR-DART, for discrete electron tomography. The technique is capable of consistently delivering reconstructions with significantly reduced missing wedge artifacts for a variety of challenging data and imaging conditions, and can automatically estimate its key parameters. We describe the principles of the technique and apply it to datasets from three different types of samples acquired under diverse imaging modes. By further reducing the available tilt range and number of projections, we show that the proposed technique can still produce consistent reconstructions with minimized missing wedge artifacts. This new development promises to provide the electron microscopy community with an easy-to-use and robust tool for high-fidelity 3D characterization of nanomaterials