285 research outputs found
VANET Connectivity Analysis
Vehicular Ad Hoc Networks (VANETs) are a peculiar subclass of mobile ad hoc
networks that raise a number of technical challenges, notably from the point of
view of their mobility models. In this paper, we provide a thorough analysis of
the connectivity of such networks by leveraging on well-known results of
percolation theory. By means of simulations, we study the influence of a number
of parameters, including vehicle density, proportion of equipped vehicles, and
radio communication range. We also study the influence of traffic lights and
roadside units. Our results provide insights on the behavior of connectivity.
We believe this paper to be a valuable framework to assess the feasibility and
performance of future applications relying on vehicular connectivity in urban
scenarios
A Linear Programming Approach to Routing Control in Networks of Constrained Nonlinear Positive Systems with Concave Flow Rates
We consider control design for positive compartmental systems in which each compartment's outflow rate is described by a concave function of the amount of material in the compartment.We address the problem of determining the routing of material between compartments to satisfy time-varying state constraints while ensuring that material reaches its intended destination over a finite time horizon. We give sufficient conditions for the existence of a time-varying state-dependent routing strategy which ensures that the closed-loop system satisfies basic network properties of positivity, conservation and interconnection while ensuring that capacity constraints are satisfied, when possible, or adjusted if a solution cannot be found. These conditions are formulated as a linear programming problem. Instances of this linear programming problem can be solved iteratively to generate a solution to the finite horizon routing problem. Results are given for the application of this control design method to an example problem. Key words: linear programming; control of networks; positive systems; controller constraints and structure
Analysis of complex contagions in random multiplex networks
We study the diffusion of influence in random multiplex networks where links
can be of different types, and for a given content (e.g., rumor, product,
political view), each link type is associated with a content dependent
parameter in that measures the relative bias type- links
have in spreading this content. In this setting, we propose a linear threshold
model of contagion where nodes switch state if their "perceived" proportion of
active neighbors exceeds a threshold \tau. Namely, a node connected to
active neighbors and inactive neighbors via type- links will turn
active if exceeds its threshold \tau. Under this
model, we obtain the condition, probability and expected size of global
spreading events. Our results extend the existing work on complex contagions in
several directions by i) providing solutions for coupled random networks whose
vertices are neither identical nor disjoint, (ii) highlighting the effect of
content on the dynamics of complex contagions, and (iii) showing that
content-dependent propagation over a multiplex network leads to a subtle
relation between the giant vulnerable component of the graph and the global
cascade condition that is not seen in the existing models in the literature.Comment: Revised 06/08/12. 11 Pages, 3 figure
Vacuum ultraviolet excitation luminescence spectroscopy of few-layered MoS 2
We report on vacuum ultraviolet (VUV) excited photoluminescence (PL) spectra emitted from a chemical vapor deposited MoSâ few-layered film. The excitation spectrum was recorded by monitoring intensities of PL spectra at ~1.9âeV. A strong wide excitation band peaking at 7âeV was found in the excitation. The PL excitation band is most intensive at liquid helium temperature and completely quenched at 100âK. Through first-principles calculations of photoabsorption in MoSâ, the excitation was explicated and attributed to transitions of electrons from p- and d- type states in the valence band to the d- and p-type states in the conduction band. The obtained photon-in/photon-out results clarify the excitation and emission behavior of the low dimensional MoSâ when interacting with the VUV light sources
Lifetimes of doubly K -shell ionized states
The present work provides a reliable interpretation of the Khαâ/Khαâ intensity ratios and an explanation of the lifetime values for K-shell hollow atoms based on an advanced theoretical analysis (using extensive multiconfiguration DiracâFock calculations with the inclusion of the transverse Breit interaction and quantum electrodynamics corrections). It was found that, as a result of closing the Khαâ de-excitation channel in the pure LS coupling scheme, the Khαâ/Khαâ intensity ratio changes with the atomic number from small values (for the LS coupling limit at low Z) to about 1.5â 1.6 (for the jâj coupling limit at high Z). However, closing the Khαâ de-excitation channel (due to the domination of the pure LS coupling for the low-Z atoms) does not enlarge the lifetimes of hollow atoms
High energy resolution off-resonant spectroscopy for X-ray absorption spectra free of self-absorption effects
X-ray emission spectra recorded in the off-resonant regime carry information on the density of unoccupied states. It is known that by employing the Kramers-Heisenberg formalism, the high energy resolution off-resonant spectroscopy (HEROS) is equivalent to the x-ray absorption spectroscopy (XAS) technique and provides the same electronic state information. Moreover, in the present Letter we demonstrate that the shape of HEROS spectra is not modified by self-absorption effects. Therefore, in contrast to the fluorescence-based XAS techniques, the recorded shape of the spectra is independent of the sample concentration or thickness. The HEROS may thus be used as an experimental technique when precise information about specific absorption features and their strengths is crucial for chemical speciation or theoretical evaluation
Characterization of ultra-shallow aluminum implants in silicon by grazing incidence and grazing emission X-ray fluorescence spectroscopy
In this work two synchrotron radiation-based depth-sensitive X-ray fluorescence techniques, grazing incidence X-ray fluorescence (GIXRF) and grazing emission X-ray fluorescence (GEXRF), are compared and their potential for non-destructive depth-profiling applications is investigated. The depth-profiling capabilities of the two methods are illustrated for five aluminum-implanted silicon wafers all having the same implantation dose of 1016 atoms per cm2 but with different implantation energies ranging from 1 keV up to 50 keV. The work was motivated by the ongoing downscaling effort of the microelectronics industry and the resulting need for more sensitive methods for the impurity and dopant depth-profile control. The principles of GIXRF and GEXRF, both based on the refraction of X-rays at the sample surface to enhance the surface-to-bulk ratio of the detected fluorescence signal, are explained. The complementary experimental setups employed at the Physikalisch-Technische Bundesanstalt (PTB) for GIXRF and the University of Fribourg for GEXRF are presented in detail. In particular, for each technique it is shown how the dopant depth profile can be derived from the angular intensity dependence of the Al Kα fluorescence line. The results are compared to theoretical predictions and, for two samples, crosschecked with values obtained from secondary ion mass spectroscopy (SIMS) measurements. A good agreement between the different approaches is found proving that the GIXRF and GEXRF methods can be efficiently employed to extract the dopant depth distribution of ion-implanted samples with good accuracy and over a wide range of implantation energies
Physical mechanisms and scaling laws of K-shell double photoionization
We report on the photon energy dependence of the K-shell double photoionization (DPI) of Mg, Al, and Si. The DPI cross sections were derived from high-resolution measurements of x-ray spectra following the radiative decay of the K-shell double vacancy states. Our data evince the relative importance of the final-state electron-electron interaction to the DPI. By comparing the double-to-single K-shell photoionization cross-section ratios for neutral atoms with convergent close-coupling calculations for He-like ions, the effect of outer shell electrons on the K-shell DPI process is assessed. Universal scaling of the DPI cross sections with the effective nuclear charge for neutral atoms is revealed
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