Anomalous Behavior near T_c and Synchronization of Andreev Reflection in Two-Dimensional Arrays of SNS Junctions

We have investigated low-temperature transport properties of two-dimensional arrays of superconductor--normal-metal--superconductor (SNS) junctions. It has been found that in two-dimensional arrays of SNS junctions (i) a change in the energy spectrum within an interval of the order of the Thouless energy is observed even when the thermal broadening far exceeds the Thouless energy for a single SNS junction; (ii) the manifestation of the subharmonic energy gap structure (SGS) with high harmonic numbers is possible even if the energy relaxation length is smaller than that required for the realization of a multiple Andreev reflection in a single SNS junction. These results point to the synchronization of a great number of SNS junctions. A mechanism of the SGS origin in two-dimensional arrays of SNS junctions, involving the processes of conventional and crossed Andreev reflection, is proposed.Comment: 5 pages, 5 figure

Proximity effects and Andreev reflection in mesoscopic SNS junction with perfect NS interfaces

Low temperature transport measurements on superconducting film - normal metal wire - superconducting film (SNS) junctions fabricated on the basis of 6 nm thick superconducting polycrystalline PtSi films are reported. The structures with the normal metal wires of two different lengths L=1.5 $\mu$m and L=6$\mu$m and the same widths W=0.3$\mu$m are studied. Zero bias resistance dip related to pair current proximity effect is observed for all junctions whereas the subharmonic energy gap structure originating from phase coherent multiple Andreev reflections have occurs only in the SNS junctions with short wires.Comment: ReVTex, 4 pages, 4 eps figures include

A song and dance: branded entertainment and mobile promotion

This article considers the rise of branded entertainment within the contemporary marketing and media environment. Specifically, it examines how mobile phone marketing in the UK has sought to engage consumers and perform the social use of mobile technology through multimedia ad campaigns with an inscribed entertainment value. Focusing on brand campaigns for 3G mobile services that borrow explicitly from reality television (T-Mobile) and Hollywood film (Orange), the article explores the concept of branded entertainment in relation to the ‘popular imagination’ of mobile communication in the late 2000s. In doing so, it examines the particular relation of flash mobs to the production of brand community

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor

SiGe growth on patterned Si(001) substrates: Surface evolution and evidence of modified island coarsening

The morphological evolution of both pits and SiGe islands on patterned Si(001) substrates is investigated. With increasing Si buffer layer thickness the patterned holes transform into multifaceted pits before evolving into inverted truncated pyramids. SiGe island formation and evolution are studied by systematically varying the Ge coverage and pit spacing and quantitative data on the influence of the pattern periodicity on the SiGe island volume are presented. The presence of pits allows the fabrication of uniform island arrays with any of their equilibrium shapes.Microelectronics & Computer EngineeringElectrical Engineering, Mathematics and Computer Scienc