Generation of spin-polarized currents via cross-relaxation with dynamically pumped paramagnetic impurities

Key to future spintronics and spin-based information processing technologies is the generation, manipulation, and detection of spin polarization in a solid state platform. Here, we theoretically explore an alternative route to spin injection via the use of dynamically polarized nitrogen-vacancy (NV) centers in diamond. We focus on the geometry where carriers and NV centers are confined to proximate, parallel layers and use a 'trap-and-release' model to calculate the spin cross-relaxation probabilities between the charge carriers and neighboring NV centers. We identify near-unity regimes of carrier polarization depending on the NV spin state, applied magnetic field, and carrier g-factor. In particular, we find that unlike holes, electron spins are distinctively robust against spin-lattice relaxation by other, unpolarized paramagnetic centers. Further, the polarization process is only weakly dependent on the carrier hopping dynamics, which makes this approach potentially applicable over a broad range of temperatures.C.A.M. acknowledges support from the National Science Foundation through Grant No. NSF-1314205. M.W.D. acknowledges support from the Australian Research Council through Grant No. DP120102232

The electron-phonon processes of the nitrogen-vacancy center in diamond

Applications of negatively charged nitrogen-vacancy center in diamond exploit the center's unique optical and spin properties, which at ambient temperature, are predominately governed by electron-phonon interactions. Here, we investigate these interactions at ambient and elevated temperatures by observing the motional narrowing of the center's excited state spin resonances. We determine that the center's Jahn-Teller dynamics are much slower than currently believed and identify the vital role of symmetric phonon modes. Our results have pronounced implications for center's diverse applications (including quantum technology) and for understanding its fundamental properties.Comment: 5 pages, 4 figure

Spin-Dependent Quantum Emission in Hexagonal Boron Nitride at Room Temperature

Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing (ISC) transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters (QEs), but spin-related effects have yet to be observed. Here, we report room-temperature observations of strongly anisotropic photoluminescence (PL) patterns as a function of applied magnetic field for select QEs in h-BN. Field-dependent variations in the steady-state PL and photon emission statistics are consistent with an electronic model featuring a spin-dependent ISC between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN $-$ a versatile two-dimensional material promising efficient photon extraction, atom-scale engineering, and the realization of spin-based quantum technologies using van der Waals heterostructures.Comment: 38 pages, 34 figure

Singlet levels of the NV−^{-} centre in diamond

The characteristic transition of the NV- centre at 637 nm is between ${}^3\mathrm{A}_2$ and ${}^3\mathrm{E}$ triplet states. There are also intermediate ${}^1\mathrm{A}_1$ and ${}^1\mathrm{E}$ singlet states, and the infrared transition at 1042 nm between these singlets is studied here using uniaxial stress. The stress shift and splitting parameters are determined, and the physical interaction giving rise to the parameters is considered within the accepted electronic model of the centre. It is established that this interaction for the infrared transition is due to a modification of electron-electron Coulomb repulsion interaction. This is in contrast to the visible 637 nm transition where shifts and splittings arise from modification to the one-electron Coulomb interaction. It is also established that a dynamic Jahn-Teller interaction is associated with the singlet ${}^1\mathrm{E}$ state, which gives rise to a vibronic level 115 $\mathrm{cm}^{-1}$ above the ${}^1\mathrm{E}$ electronic state. Arguments associated with this level are used to provide experimental confirmation that the ${}^1\mathrm{A}_1$ is the upper singlet level and ${}^1\mathrm{E}$ is the lower singlet level.Comment: 19 pages, 6 figure

Optimisation of diamond quantum processors

Diamond quantum processors consisting of a nitrogen-vacancy (NV) centre and surrounding nuclear spins have been the key to significant advancements in room-temperature quantum computing, quantum sensing and microscopy. The optimisation of these processors is crucial for the development of large-scale diamond quantum computers and the next generation of enhanced quantum sensors and microscopes. Here, we present a full model of multi-qubit diamond quantum processors and develop a semi-analytical method for designing gate pulses. This method optimises gate speed and fidelity in the presence of random control errors and is readily compatible with feedback optimisation routines. We theoretically demonstrate infidelities approaching $\sim 10^{-5}$ for single-qubit gates and established evidence that this can also be achieved for a two-qubit CZ gate. Consequently, our method reduces the effects of control errors below the errors introduced by hyperfine field misalignment and the unavoidable decoherence that is intrinsic to the processors. Having developed this optimal control, we simulated the performance of a diamond quantum processor by computing quantum Fourier transforms. We find that the simulated diamond quantum processor is able to achieve fast operations with low error probability.Comment: Published version. Updated references, additional analysis for the infidelities of CZ gate. Two new appendices on discussing the effects of time-ordering in the quantum evolution and examining the effects of the secular approximation and hyperfine field misalignments on gate fidelities. Adjusted the discussions and claims accordingl

Mechanical rotation via optical pumping of paramagnetic impurities

Hybrid quantum systems exhibiting coupled optical, spin, and mechanical degrees of freedom can serve as a platform for sensing, or as a bus to mediate interactions between qubits with disparate energy scales. These systems are also creating opportunities to test foundational ideas in quantum mechanics, including direct observations of the quantum regime in macroscopic objects. Here, we make use of angular momentum conservation to study the dynamics of a pair of paramagnetic centers featuring different spin numbers in the presence of a properly tuned external magnetic field. We examine the interplay between optical excitation, spin evolution, and mechanical motion, and theoretically show that in the presence of continuous optical illumination, interspin cross relaxation must induce rigid rotation of the host crystal. The system dynamics is robust to scattering of spin-polarized phonons, a result we build on to show this form of angular momentum transfer should be observable using state-of-the-art torsional oscillators or trapped nanoparticles.Fil: Zangara, Pablo René. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Córdoba. Instituto de Física Enrique Gaviola. Universidad Nacional de Córdoba. Instituto de Física Enrique Gaviola; Argentina. City College of New York; Estados UnidosFil: Wood, Alexander. University of Melbourne; AustraliaFil: Doherty, Marcus W.. Australian National University; AustraliaFil: Meriles, Carlos A.. City College of New York; Estados Unido

Optical patterning of trapped charge in nitrogen-doped diamond

The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen upon localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories