Dynamics of trion formation in GaAs quantum wells

We show a double path mechanism for the formation of charged excitons (trions); they are formed through bi- and trimolecular processes. This directly implies that both negatively and positively charged excitons coexist in a quantum well, even in the absence of excess carriers. The model is substantiated by time-resolved photoluminescence experiments performed on a very high quality InxGa1-xAs quantum well sample, in which the photoluminescence contributions at the energy of the trion and exciton and at the band edge can be clearly separated and traced over a broad range of times and densities. The unresolved discrepancy between the theoretical and experimental radiative decay time of the exciton in a doped semiconductor quantum well is explained by the same model

Thermal carrier emission and nonradiative recombinations in nonpolar(Al,Ga)N/GaN quantum wells grown on bulk GaN.

International audienceWe investigate, via time-resolved photoluminescence, the temperature-dependence of charge carrier recombination mechanisms in nonpolar (Al,Ga)N/GaN single quantum wells (QWs) grown via molecular beam epitaxy on the a-facet of bulk GaN crystals. We study the influence of both QW width and barrier Al content on the dynamics of excitons in the 10-320K range. We first show that the effective lifetime of QW excitons tau increases with temperature, which is evidence that nonradiative mechanisms do not play any significant role in the low-temperature range. The temperature range for increasing tau depends on the QW width and Al content in the (Al,Ga)N barriers. For higher temperatures, we observe a reduction in the QW emission lifetime combined with an increase in the decay time for excitons in the barriers, until both exciton populations get fully thermalized. Based on analysis of the ratio between barrier and QW emission intensities, we demonstrate that the main mechanism limiting the radiative efficiency in our set of samples is related to nonradiative recombination in the (Al,Ga)N barriers of charge carriers that have been thermally emitted from the QWs

Exciton recombination dynamics in a-plane (Al,Ga)N/GaN quantum wells probed by picosecond photo and cathodoluminescence.

International audienceWe present a combined low-temperature time-resolved cathodoluminescence and photoluminescence study of exciton recombination mechanisms in a 3.8 nm thick a-plane (Al,Ga)N/GaN quantum well (QW). We observe the luminescence from QW excitons and from excitons localized on basal stacking faults (BSFs) crossing the QW plane, forming quantum wires (QWRs) at the intersection. We show that the dynamics of QW excitons is dominated by their capture on QWRs, with characteristic decay times ranging from 50 to 350 ps, depending on whether the local density of BSFs is large or small. We therefore relate the multiexponential behavior generally observed by time-resolved photoluminescence in non-polar (Al,Ga)/GaN QW to the spatial dependence of QW exciton dynamics on the local BSF density. QWR exciton decay time is independent of the local density in BSFs and its temperature evolution exhibits a zero-dimensional behavior below 60 K. We propose that QWR exciton localization along the wire axis is induced by well-width fluctuation, reproducing in a one-dimensional system the localization processes usually observed in QWs

Nonlinear relaxation of zero-dimension-trapped microcavity polaritons

We study the emission properties of confined polariton states in shallow zero-dimensional traps under nonresonant excitation. We evidence several relaxation regimes. For slightly negative photon-exciton detuning, we observe a nonlinear increase of the emission intensity, characteristic of carrier-carrier scattering assisted relaxation under strong-coupling regime. This demonstrates the efficient relaxation toward a confined state of the system. For slightly positive detuning, we observe the transition from strong to weak coupling regime and then to single-mode lasing

Microcavity for optical telecommunication device, comprises two bragg reflectors separated by at least one semiconductor layer.

Microcavity comprising two reflectors, at least one semiconductor layer separating said reflectors and a semiconductor quantum well wherein at least one of said reflectors and of said at least one semiconductor layer comprises a structure which is adjusted to localize a polariton in said microcavity

Near infrared twin photon source.

Optical parametric oscillator including a semiconductor microcavity being configured to spatially localize polaritons of at least three quantized polariton energy levels to effect an optical parametric oscillation

Dynamics of dark-soliton formation in a polariton quantum fluid

International audiencePolariton fluids have revealed huge potentialities in order to investigate the properties of bosonic fluids at the quantum scale. Among those properties, the opportunity to create dark as well as bright solitons has been demonstrated recently. In the present experiments, we image the formation dynamics of oblique dark solitons. They nucleate in the wake of an engineered attractive potential that perturbs the polariton quantum fluid. Thanks to time and phase measurements, we assess quantitatively the formation process. The formation velocity is observed to increase with increasing distance between the flow injection point and the obstacle which modulates the density distribution of the polariton fluid. We propose an explanation in terms of the increased resistance to the flow and of the conditions for the convective instability of dark solitons. By using an iterative solution of the generalized Gross-Pitaevskii equation, we are able to reproduce qualitatively our experimental results

Polychromatic selective lasing of confined polaritons

International audienceExciton-polaritons result from the strong coupling between an excitonic and a photonic mode and due to the easy manipulation of their density and spin they have been often proposed for the realization of all-optical devices. We hereby present a new relaxation mechanism for confined polaritons and its application in an innovative device in which the pump beam can be selectively channeled into several polariton lasers at different wavelengths