Second order resonant Raman scattering in single layer tungsten disulfide (WS2_{2})

Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.Comment: 6 pages, 4 figure

Temperature dependence of the coherence in polariton condensates

We present a time-resolved experimental study of the temperature effect on the coherence of traveling polariton condensates. The simultaneous detection of their emission both in real and reciprocal space allows us to fully monitor the condensates' dynamics. We obtain fringes in reciprocal space as a result of the interference between polariton wave packets (WPs) traveling with the same speed. The periodicity of these fringes is inversely proportional to the spatial distance between the interfering WPs. In a similar fashion, we obtain interference fringes in real space when WPs traveling in opposite directions meet. The visibility of both real- and reciprocal-space interference fringes rapidly decreases with increasing temperature and vanishes. A theoretical description of the phase transition, considering the coexistence of condensed and noncondensed particles, for an out-of-equilibrium condensate such as ours is still missing, yet a comparison with theories developed for atomic condensates allows us to infer a critical temperature for the BEC-like transition when the visibility goes to zeroE.R. acknowledges financial support from a Spanish FPI scholarship No. BES-2015-074708. This work was partially supported by the Spanish MINECO grants No. MAT2014-53119-C2-1-R and No. MAT2017-83722-R. P.G.S. acknowledges support from ITMO Fellowship Program and megaGrant No. 14.Y26.31.0015 of the Ministry of Education and Science of Russian Federatio

Extending ballistic graphene FET lumped element models to diffusive devices

In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the "Top-of-the-barrier" approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained