Optimisation and realisation of a portable NMR apparatus and Micro Antenna for NMR

International audienceThis paper is focused on two designs and realizations. The first one concerns a prototype of a portable NMR (nuclear magnetic resonance) apparatus. The second one concerns NMR micro antenna realization. For the first part, our goal is the NMR magnetic field homogeneity and the signal-to-noise ratio (SNR) improvement. Since de the volume of the sample to analyse is around 1 cm 3 , the design is optimized to obtain a good SNR. Particularly, the magnet is chosen to obtain a high magnetic field with limited inhomogeneities. The receiver antenna is designed and optimized to have high feeling factor and then more sensitivity. A mixer and a low-pass filter are used in order to limit the bandwidth and reduce the thermal noise. The FID is digitized and addressed to a FPGA which averages successive acquisitions in order to increase the SNR. The final acquisition is processed for determining the FID spectrum. In the second part, a new concept of micro coil is presented in order to measure the small volumes and small concentrations samples by NMR spectroscopy at 4.7 T (200 MHz proton frequency resonance). This micro sensor would offer the possibility of new investigation techniques based on micro coils' implantation used for in vivo study of local cerebral metabolites of animals models

Pulsed chemical vapor deposition of conformal GeSe for application as an OTS selector

The ovonic threshold switch (OTS) selector based on the voltage snapback of amorphous chalcogenides has received tremendous attention as it provides several desirable characteristics such as bidirectional switching, a controllable threshold voltage, high drive currents, and low leakage currents. GeSe is a well-known OTS selector that fulfills all the requirements imposed by future high-density storage class memories. Here, we report on pulsed chemical vapor deposition (CVD) of amorphous GeSe by using GeCl2 center dot C4H8O2 as a Ge source and two different Se sources namely bis-trimethylsilylselenide ((CH3)(3)Si)(2)Se (TMS)(2)Se and bis-triethylsilylselenide ((C2H5)(3)Si)(2)Se (TES)(2)Se. We utilized total reflection X-ray fluorescence (TXRF) to study the kinetics of precursor adsorption on the Si substrate. GeCl2 center dot C4H8O2 precursor adsorption on a 300 mm Si substrate showed under-dosing due to limited precursor supply. On the other hand, the Se precursor adsorption is limited by low reaction efficiency as we learned from a better within-wafer uniformity. Se precursors need Cl sites (from Ge precursor) for precursor ligand exchange reactions. Adsorption of (TMS)(2)Se is found to be much faster than (TES)(2)Se on a precoated GeClx layer. Atomic layer deposition (ALD) tests with GeCl2 center dot C4H8O2 and (TMS)(2)Se revealed that the growth per cycle (GPC) decreases with the introduction of purge steps in the ALD cycle, whereas a higher GPC is obtained in pulsed-CVD mode without purges. Based on this basic understanding of the process, we developed a pulsed CVD growth recipe (GPC = 0.3 angstrom per cycle) of GeSe using GeCl2 center dot C4H8O2 and (TMS)(2)Se at a reactor temperature of 70 degrees C. The 20 nm GeSe layer is amorphous and stoichiometric with traces of chlorine and carbon impurities. The film has a roughness of similar to 0.3 nm and it starts to crystallize at a temperature of similar to 370 degrees C. GeSe grown on 3D test structures showed excellent film conformality