Hopping magneto-transport via nonzero orbital momentum states and organic magnetoresistance

In hopping magnetoresistance of doped insulators, an applied magnetic field shrinks the electron (hole) s-wave function of a donor or an acceptor and this reduces the overlap between hopping sites resulting in the positive magnetoresistance quadratic in a weak magnetic field, B. We extend the theory of hopping magnetoresistance to states with nonzero orbital momenta. Different from s-states, a weak magnetic field expands the electron (hole) wave functions with positive magnetic quantum numbers, m > 0, and shrinks the states with negative m in a wide region outside the point defect. This together with a magnetic-field dependence of injection/ionization rates results in a negative weak-field magnetoresistance, which is linear in B when the orbital degeneracy is lifted. The theory provides a possible explanation of a large low-field magnetoresistance in disordered pi-conjugated organic materials (OMAR).Comment: 4 pages, 3 figure

Ground state properties of ferromagnetic metal/conjugated polymer interfaces

We theoretically investigate the ground state properties of ferromagnetic metal/conjugated polymer interfaces. The work is partially motivated by recent experiments in which injection of spin polarized electrons from ferromagnetic contacts into thin films of conjugated polymers was reported. We use a one-dimensional nondegenerate Su-Schrieffer-Heeger (SSH) Hamiltonian to describe the conjugated polymer and one-dimensional tight-binding models to describe the ferromagnetic metal. We consider both a model for a conventional ferromagnetic metal, in which there are no explicit structural degrees of freedom, and a model for a half-metallic ferromagnetic colossal magnetoresistance (CMR) oxide which has explicit structural degrees of freedom. The Fermi energy of the magnetic metallic contact is adjusted to control the degree of electron transfer into the polymer. We investigate electron charge and spin transfer from the ferromagnetic metal to the organic polymer, and structural relaxation near the interface. Bipolarons are the lowest energy charge state in the bulk polymer for the nondegenerate SSH model Hamiltonian. As a result electrons (or holes) transferred into the bulk of the polymer form spinless bipolarons. However, there can be spin density in the polymer localized near the interface.Comment: 7 figure

Erratum: “Seed layer technique for high quality epitaxial manganite films” [AIP Advances 6, 085109 (2016)]

No abstract available

Surface nanostructures in manganite films

Ultrathin manganite films are widely used as active electrodes in organic spintronic devices. In this study, a scanning tunnelling microscopy (STM) investigation with atomic resolution revealed previously unknown surface features consisting of small non-stoichiometric islands. Based upon this evidence, a new mechanism for the growth of these complex materials is proposed. It is suggested that the non-stoichiometric islands result from nucleation centres that are below the critical threshold size required for stoichiometric crystalline growth. These islands represent a kinetic intermediate of single-layer growth regardless of the film thickness, and should be considered and possibly controlled in manganite thin-film applications

Manganite/Alq3 interfaces investigated by impedance spectroscopy technique

With the general objective of studying interfaces between ferromagnetic materials and organic semiconductors, we report ac impedance investigations on La0.7Sr0.3MnO3 (LSMO)/tris(8-hydroxyquinoline)aluminium (Alq3)/Al and Indium Tin Oxide (ITO)/Alq3/Al heterostructures, in the frequency range between 20 Hz and 1 MHz. The comparison of the equivalent circuits deduced to fit the experimental ac responses allows isolating a specific RC contribution which can be attributed to the LSMO/Alq3 interface region. Using the information obtained from our ac measurements, we propose a model which fits the temperature dependence of the magnetoresistance in spin valves combining LSMO electrodes and Alq3 layers

Unravelling the role of the interface for spin injection into organic semiconductors

Whereas spintronics brings the spin degree of freedom to electronic devices, molecular/organic electronics adds the opportunity to play with the chemical versatility. Here we show how, as a contender to commonly used inorganic materials, organic/molecular based spintronics devices can exhibit very large magnetoresistance and lead to tailored spin polarizations. We report on giant tunnel magnetoresistance of up to 300% in a (La,Sr)MnO3/Alq3/Co nanometer size magnetic tunnel junction. Moreover, we propose a spin dependent transport model giving a new understanding of spin injection into organic materials/molecules. Our findings bring a new insight on how one could tune spin injection by molecular engineering and paves the way to chemical tailoring of the properties of spintronics devices.Comment: Original version. Revised version to appear in Nature Physics

Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices

[EN] Cation-exchange membranes made exclusively from ceramic materials have been synthesized by means of the impregnation of microporous ceramic supports with zirconium phosphate. Changes in the pore size distribution and total pore volume of the supports were provoked by the addition of starch as pore former in the fabrication procedure. This allowed the production of supports with increased effective electrical conductivities and with larger pores available for the zirconium phosphate deposition. An improved functionality for the exchange of cations was given to the ceramic membranes by means of their impregnation with the active particles of zirconium phosphate. The ion-exchange properties of the membranes were increased with further impregnation cycles and the resulting current–voltage curves showed a similar shape to that typical of commercial polymeric ion-exchange membranes. The production of ionexchange membranes with increased chemical and radiation stability will broaden their applicability for the treatment of specific industrial waste waters, which are very aggressive for the current commercial ion-exchange membranes.The authors acknowledge the technical help from Federico Bona at CNR-ISMN in Bologna and the extensive use of the scanning probe microscopes at "Centro Interfacolta Misure" of the University of Parma. Financial support from the FP7 Projects NMP-2010-SMALL-4-263104 (HINTS), NMP3-SL-2010-246073 (GRENADA), and NMP3-LA-2010-246102 (IFOX) is acknowledged.Graziosi, P.; Riminucci, A.; Prezioso, M.; Newby, C.; Brunel, D.; Bergenti, I.; Pullini, D.... (2014). Pentacene thin films on ferromagnetic oxide: Growth mechanism and spintronic devices. Applied Physics Letters. 105(2):1-5. https://doi.org/10.1063/1.4890328S15105