A versatile scanning photocurrent mapping system to characterize optoelectronic devices based on 2D materials

The investigation of optoelectronic devices based on two-dimensional materials and their heterostructures is a very active area of investigation with both fundamental and applied aspects involved. We present a description of a home-built scanning photocurrent microscope that we have designed and developed to perform electronic transport and optical measurements of two-dimensional materials based devices. The complete system is rather inexpensive (<10000 EUR) and it can be easily replicated in any laboratory. To illustrate the setup we measure current-voltage characteristics, in dark and under global illumination, of an ultra-thin PN junction formed by the stacking of an n-doped few-layer MoS2 flake onto a p-type MoS2 flake. We then acquire scanning photocurrent maps and by mapping the short circuit current generated in the device under local illumination we find that at zero bias the photocurrent is generated mostly in the region of overlap between the n-type and p-type flakes.Comment: 9 pages, 3 figures, 1 table, supporting informatio

Enhanced Visibility of MoS2, MoSe2, WSe2 and Black Phosphorus: Making Optical Identification of 2D Semiconductors Easier

We explore the use of Si3N4/Si substrates as a substitute of the standard SiO2/Si substrates employed nowadays to fabricate nanodevices based on 2D materials. We systematically study the visibility of several 2D semiconducting materials that are attracting a great deal of interest in nanoelectronics and optoelectronics: MoS2, MoSe2, WSe2 and black phosphorus. We find that the use of Si3N4/Si substrates provides an increase of the optical contrast up to a 50%-100% and also the maximum contrast shifts towards wavelength values optimal for human eye detection, making optical identification of 2D semiconductors easier.Comment: 4 figures + 3 supp.info. figure

Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2

The research field of two dimensional (2D) materials strongly relies on optical microscopy characterization tools to identify atomically thin materials and to determine their number of layers. Moreover, optical microscopy-based techniques opened the door to study the optical properties of these nanomaterials. We presented a comprehensive study of the differential reflectance spectra of 2D semiconducting transition metal dichalcogenides (TMDCs), MoS2, MoSe2, WS2, and WSe2, with thickness ranging from one layer up to six layers. We analyzed the thickness-dependent energy of the different excitonic features, indicating the change in the band structure of the different TMDC materials with the number of layers. Our work provided a route to employ differential reflectance spectroscopy for determining the number of layers of MoS2, MoSe2, WS2, and WSe2.Comment: Main text (3 Figures) and Supp. Info. (23 Figures

Photodiodes based in La0.7Sr0.3MnO3/single layer MoS2 hybrid vertical heterostructures

The fabrication of artificial materials by stacking of individual two-dimensional (2D) materials is amongst one of the most promising research avenues in the field of 2D materials. Moreover, this strategy to fabricate new man-made materials can be further extended by fabricating hybrid stacks between 2D materials and other functional materials with different dimensionality making the potential number of combinations almost infinite. Among all these possible combinations, mixing 2D materials with transition metal oxides can result especially useful because of the large amount of interesting physical phenomena displayed separately by these two material families. We present a hybrid device based on the stacking of a single layer MoS2 onto a lanthanum strontium manganite (La0.7Sr0.3MnO3) thin film, creating an atomically thin device. It shows a rectifying electrical transport with a ratio of 103, and a photovoltaic effect with Voc up to 0.4 V. The photodiode behaviour arises as a consequence of the different doping character of these two materials. This result paves the way towards combining the efforts of these two large materials science communities.Comment: 1 table, 4 figures (+9 supp. info. figures

Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides

Since their discovery single-layer semiconducting transition metal dichalcogenides have attracted much attention thanks to their outstanding optical and mechanical properties. Strain engineering in these two-dimensional materials aims to tune their bandgap energy and to modify their optoelectronic properties by the application of external strain. In this paper we demonstrate that biaxial strain, both tensile and compressive, can be applied and released in a timescale of a few seconds in a reproducible way on transition metal dichalcogenides monolayers deposited on polymeric substrates. We can control the amount of biaxial strain applied by letting the substrate expand or compress. To do this we change the substrate temperature and choose materials with a large thermal expansion coefficient. After the investigation of the substrate-dependent strain transfer, we performed micro-differential spectroscopy of four transition metal dichalcogenides monolayers (MoS2, MoSe2, WS2, WSe2) under the application of biaxial strain and measured their optical properties. For tensile strain we observe a redshift of the bandgap that reaches a value as large as 95 meV/% in the case of single-layer WS2 deposited on polypropylene. The observed bandgap shifts as a function of substrate extension/compression follow the order MoSe2 < MoS2 < WSe2 < WS2. Theoretical calculations of these four materials under biaxial strain predict the same trend for the material-dependent rates of the shift and reproduce well the features observed in the measured reflectance spectra.Comment: 10 pages, 5 figures, 2 tables, supporting informatio

Micro-reflectance and transmittance spectroscopy: a versatile and powerful tool to characterize 2D materials

Optical spectroscopy techniques such as differential reflectance and transmittance have proven to be very powerful techniques to study 2D materials. However, a thorough description of the experimental setups needed to carry out these measurements is lacking in the literature. We describe a versatile optical microscope setup to carry out differential reflectance and transmittance spectroscopy in 2D materials with a lateral resolution of ~1 micron in the visible and near-infrared part of the spectrum. We demonstrate the potential of the presented setup to determine the number of layers of 2D materials and to characterize their fundamental optical properties such as excitonic resonances. We illustrate its performance by studying mechanically exfoliated and chemical vapor-deposited transition metal dichalcogenide samples.Comment: 5 main text figures + 1 table with all the part numbers to replicate the experimental setup + 4 supp. info. figure