Dielectric properties of charge ordered LuFe2O4 revisited: The apparent influence of contacts

We show results of broadband dielectric measurements on the charge ordered, proposed to be mul- tiferroic material LuFe2O4. The temperature and frequency dependence of the complex permittivity as investigated for temperatures above and below the charge-oder transition near T_CO ~ 320 K and for frequencies up to 1 GHz can be well described by a standard equivalent-circuit model considering Maxwell-Wagner-type contacts and hopping induced AC-conductivity. No pronounced contribution of intrinsic dipolar polarization could be found and thus the ferroelectric character of the charge order in LuFe2O4 has to be questioned.Comment: 4 pages, 3 figure

Magneto-resistance in a lithography defined single constrained domain wall spin valve

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge

Selective darkening of degenerate transitions for implementing quantum controlled-NOT gates

We present a theoretical analysis of the selective darkening method for implementing quantum controlled-NOT (CNOT) gates. This method, which we recently proposed and demonstrated, consists of driving two transversely-coupled quantum bits (qubits) with a driving field that is resonant with one of the two qubits. For specific relative amplitudes and phases of the driving field felt by the two qubits, one of the two transitions in the degenerate pair is darkened, or in other words, becomes forbidden by effective selection rules. At these driving conditions, the evolution of the two-qubit state realizes a CNOT gate. The gate speed is found to be limited only by the coupling energy J, which is the fundamental speed limit for any entangling gate. Numerical simulations show that at gate speeds corresponding to 0.48J and 0.07J, the gate fidelity is 99% and 99.99%, respectively, and increases further for lower gate speeds. In addition, the effect of higher-lying energy levels and weak anharmonicity is studied, as well as the scalability of the method to systems of multiple qubits. We conclude that in all these respects this method is competitive with existing schemes for creating entanglement, with the added advantages of being applicable for qubits operating at fixed frequencies (either by design or for exploitation of coherence sweet-spots) and having the simplicity of microwave-only operation.Comment: 25 pages, 5 figure

Low-crosstalk bifurcation detectors for coupled flux qubits

We present experimental results on the crosstalk between two AC-operated dispersive bifurcation detectors, implemented in a circuit for high-fidelity readout of two strongly coupled flux qubits. Both phase-dependent and phase-independent contributions to the crosstalk are analyzed. For proper tuning of the phase the measured crosstalk is 0.1 % and the correlation between the measurement outcomes is less than 0.05 %. These results show that bifurcative readout provides a reliable and generic approach for multi-partite correlation experiments.Comment: Copyright 2010 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters and may be found at http://link.aip.org/link/?apl/96/12350

On the hyperbolicity and causality of the relativistic Euler system under the kinetic equation of state

We show that a pair of conjectures raised in [11] concerning the construction of normal solutions to the relativistic Boltzmann equation are valid. This ensures that the results in [11] hold for any range of positive temperatures and that the relativistic Euler system under the kinetic equation of state is hyperbolic and the speed of sound cannot overcome $c/\sqrt{3}$.Comment: 6 pages. Abridged version; full version to appear in Commun. Pure Appl. Ana

H-theorem for classical matter around a black hole

We propose a classical solution for the kinetic description of matter falling into a black hole, which permits to evaluate both the kinetic entropy and the entropy production rate of classical infalling matter at the event horizon. The formulation is based on a relativistic kinetic description for classical particles in the presence of an event horizon. An H-theorem is established which holds for arbitrary models of black holes and is valid also in the presence of contracting event horizons

Spin-orbit induced mixed-spin ground state in RRNiO3_3 perovskites probed by XAS: new insight into the metal to insulator transition

We report on a Ni L$_{2,3}$ edges x-ray absorption spectroscopy (XAS) study in $R$NiO$_3$ perovskites. These compounds exhibit a metal to insulator ($MI$) transition as temperature decreases. The L$_{3}$ edge presents a clear splitting in the insulating state, associated to a less hybridized ground state. Using charge transfer multiplet calculations, we establish the importance of the crystal field and 3d spin-orbit coupling to create a mixed-spin ground state. We explain the $MI$ transition in $R$NiO$_3$ perovskites in terms of modifications in the Ni$^{3+}$ crystal field splitting that induces a spin transition from an essentially low-spin (LS) to a mixed-spin state.Comment: 4 pages, 4 figures, accepted as PRB - Rapid Comm. Dez. 200

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM

Nitrogen doping of TiO2 photocatalyst forms a second eg state in the Oxygen (1s) NEXAFS pre-edge

Close inspection of the pre-edge in oxygen near-edge x-ray absorption fine structure spectra of single step, gas phase synthesized titanium oxynitride photocatalysts with 20 nm particle size reveals an additional eg resonance in the VB that went unnoticed in previous TiO2 anion doping studies. The relative spectral weight of this Ti(3d)-O(2p) hybridized state with respect to and located between the readily established t2g and eg resonances scales qualitatively with the photocatalytic decomposition power, suggesting that this extra resonance bears co-responsibility for the photocatalytic performance of titanium oxynitrides at visible light wavelengths