Exact Analytical Formula for the Excess Noise Factor for Mixed Carrier Injection Avalanche Photodiodes

The well-known analytical formula for the excess noise factor associated with avalanche photodiodes (APDs), developed by R. J. McIntyre in 1966, assumes the injection of either an electron or a hole at the edge of the APD\u27s avalanche region. This formula is based on the statistics of the probabilities of carriers gaining and losing energy subject to high electric fields. However, this analytical formula, is not applicable in cases when photons are absorbed inside the avalanche region (even though the physics of the high field transport remains the same), and its use may severely underestimate or overestimate the actual excess noise factor depending on the absorption profile and the hole-to-electron ionization coefficient ratio, k. Here, an easy-to-use exact analytical formula is derived for the excess noise factor of APDs while taking into account a mixed-carrier initiated avalanche multiplication process, which is triggered by a parent electron-hole pair at an arbitrarily specified location within the multiplication region. The derivation relies on analytically solving a special case of a previously reported recursive integral equations [Hayat et al., IEEE Trans. Electron Devices, vol. 39, no. 3, pp. 546-552, Mar. 1992.], and the result matches the formula reported by McIntyre in 1999 using a different and limited technique. In addition, an expression for the excess noise factor is presented in the case when the location of the parent electron-hole pair within the multiplication region obeys an arbitrary exponential distribution. The results show that in contrast to the case of edge parent-electron injection, when mixed injection is allowed even a small level of hole ionization (e.g., small k ~ 0.0001) causes the excess noise factor to increase dramatically, depending on the absorption profile as it ranges from narrow to flat within the multiplication region. The theoretical results are validated against experimental results for Si APDs

Sensitivity of High-Speed Lightwave System Receivers Using InAlAs Avalanche Photodiodes

Calculations based on a rigorous analytical model are carried out to compare the sensitivity of optical receivers that use InP and In0.52Al0.48As avalanche photodiodes (APDs). The model includes the effects of intersymbol interference, tunneling current, avalanche noise and its correlation with the stochastic avalanche duration, dead space, and transimpedance amplifier noise. For a 10-Gb/s system with a bit-error rate of 10-12, the optimum receiver sensitivity predicted for In0.52Al0.48As and InP APDs is -28.6 and -28.1 dBm, respectively, corresponding to a reduction of 11% in optical signal power for receivers using In0.52Al0.48As APDs. Thus, considering overall receiver sensitivity, the improvement offered by In0.52Al0.48As APDs over InP is modest

Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients

The experimentally determined impact ionization coefficients, , include intrinsically the presence of a dead-space, where carriers cannot impact ionize as they do not have sufficient energy. These, therefore, cannot be used by nonlocal ionization models, which require the enabled ionization coefficients, which describe the ionization probability after the dead-space. A relatively simple relationship is shown to exist between α\u27(β\u27) and , which requires only the knowledge of the carrier threshold energies. This allows conventionally limited to the local model framework, to be used to give a very good prediction of the avalanche multiplication and excess noise for a wide range of device widths down to 0.05 μm, where the dead-space effect is significant. Parameterized values of and the carrier threshold energies are listed for a range of commonly used III-V semiconductors lattice matched to GaAs and InP substrates, as well as Si and SiC

Optimization of InP APDs for High-Speed Lightwave Systems

Calculations based on a rigorous analytical model are carried out to optimize the width of the indium phosphide avalanche region in high-speed direct-detection avalanche photodiode-based optical receivers. The model includes the effects of intersymbol interference (ISI), tunneling current, avalanche noise, and its correlation with the stochastic avalanche duration, as well as dead space. A minimum receiver sensitivity of -28 dBm is predicted at an optimal width of 0.18 mum and an optimal gain of approximately 13, for a 10 Gb/s communication system, assuming a Johnson noise level of 629 noise electrons per bit. The interplay among the factors controlling the optimum sensitivity is confirmed. Results show that for a given transmission speed, as the device width decreases below an optimum value, increased tunneling current outweighs avalanche noise reduction due to dead space, resulting in an increase in receiver sensitivity. As the device width increases above its optimum value, the receiver sensitivity increases as device bandwidth decreases, causing ISI to dominate avalanche noise and tunneling current shot noise

Photon-photon correlations and entanglement in doped photonic crystals

We consider a photonic crystal (PC) doped with four-level atoms whose intermediate transition is coupled near-resonantly with a photonic band-gap edge. We show that two photons, each coupled to a different atomic transition in such atoms, can manifest strong phase or amplitude correlations: One photon can induce a large phase shift on the other photon or trigger its absorption and thus operate as an ultrasensitive nonlinear photon-switch. These features allow the creation of entangled two-photon states and have unique advantages over previously considered media: (i) no control lasers are needed; (ii) the system parameters can be chosen to cause full two-photon entanglement via absorption; (iii) a number of PCs can be combined in a network.Comment: Modified, expanded text; added reference

Low-Noise Speed-Optimized Large Area CMOS Avalanche Photodetector for Visible Light Communication

Mean-gain and excess-noise measurements are presented for a 350 × 350 μm 2 P+/N-well/P-sub and a 270 × 270 μm 2 N-well/P-sub avalanche photodetectors fabricated using 0.13-μm CMOS technology. The active area of the P+/N-well/P-sub device was divided into multiple subsections to decrease transit time and increase speed. For the P+/N-well structure, remarkably low excess-noise factors of 4.1 and 4 were measured at a mean gain of 16 corresponding to a k value of approximately 0.1, using a 542 (633) nm laser. For a variant N-well/P-sub structure, excess-noise factors of 6.5 and 6.2 were measured at a mean-gain of 16 corresponding to a k value of approximately 0.3. The proposed CMOS APDs with high gain, low noise, low avalanche breakdown voltage (below approximately 12 V) and low dark-currents (approximately nA) would be attractive for low-cost optical receivers in visible-light communication systems

Predictive approaches to heterogeneous treatment effects: a scoping review

Background: Recent evidence suggests that there is often substantial variation in the benefits and harms across a trial population. We aimed to identify regression modeling approaches that assess heterogeneity of treatment effect within a randomized clinical trial. Methods: We performed a literature review using a broad search strategy, complemented by suggestions of a technical expert panel. Results: The approaches are classified into 3 categories: 1) Risk-based methods (11 papers) use only prognostic factors to define patient subgroups, relying on the mathematical dependency of the absolute risk difference on baseline risk; 2) Treatment effect modeling methods (9 papers) use both prognostic factors and treatment effect modifiers to explore characteristics that interact with the effects of therapy on a relative scale. These methods couple data-driven subgroup identification with approaches to prevent overfitting, such as penalization or use of separate data sets for subgroup identification and effect estimation. 3) Optimal treatment regime methods (12 papers) focus primarily on treatment effect modifiers to classify the trial population into those who benefit from treatment and those who do not. Finally, we also identified papers which describe model evaluation methods (4 papers). Conclusions: Three classes of approaches were identified to assess heterogeneity of treatment effect. Methodological research, including both simulations and empirical evaluations, is required to compare the available methods in different settings and to derive well-informed guidance for their application in RCT analysis

Search for Higgs Bosons in e+e- Collisions at 183 GeV

The data collected by the OPAL experiment at sqrts=183 GeV were used to search for Higgs bosons which are predicted by the Standard Model and various extensions, such as general models with two Higgs field doublets and the Minimal Supersymmetric Standard Model (MSSM). The data correspond to an integrated luminosity of approximately 54pb-1. None of the searches for neutral and charged Higgs bosons have revealed an excess of events beyond the expected background. This negative outcome, in combination with similar results from searches at lower energies, leads to new limits for the Higgs boson masses and other model parameters. In particular, the 95% confidence level lower limit for the mass of the Standard Model Higgs boson is 88.3 GeV. Charged Higgs bosons can be excluded for masses up to 59.5 GeV. In the MSSM, mh > 70.5 GeV and mA > 72.0 GeV are obtained for tan{beta}>1, no and maximal scalar top mixing and soft SUSY-breaking masses of 1 TeV. The range 0.8 < tanb < 1.9 is excluded for minimal scalar top mixing and m{top} < 175 GeV. More general scans of the MSSM parameter space are also considered.Comment: 49 pages. LaTeX, including 33 eps figures, submitted to European Physical Journal

A Measurement of the Product Branching Ratio f(b->Lambda_b).BR(Lambda_b->Lambda X) in Z0 Decays

The product branching ratio, f(b->Lambda_b).BR(Lambda_b->Lambda X), where Lambda_b denotes any weakly-decaying b-baryon, has been measured using the OPAL detector at LEP. Lambda_b are selected by the presence of energetic Lambda particles in bottom events tagged by the presence of displaced secondary vertices. A fit to the momenta of the Lambda particles separates signal from B meson and fragmentation backgrounds. The measured product branching ratio is f(b->Lambda_b).BR(Lambda_b->Lambda X) = (2.67+-0.38(stat)+0.67-0.60(sys))% Combined with a previous OPAL measurement, one obtains f(b->Lambda_b).BR(Lambda_b->Lambda X) = (3.50+-0.32(stat)+-0.35(sys))%.Comment: 16 pages, LaTeX, 3 eps figs included, submitted to the European Physical Journal

Selection of antigenically advanced variants of seasonal influenza viruses

Influenza viruses mutate frequently, necessitating constant updates of vaccine viruses. To establish experimental approaches that may complement the current vaccine strain selection process, we selected antigenic variants from human H1N1 and H3N2 influenza virus libraries possessing random mutations in the globular head of the haemagglutinin protein (which includes the antigenic sites) by incubating them with human and/or ferret convalescent se