5 research outputs found

    AFM imaging of natural optical structures

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    The research in this field is focused to the investigation of biological structures with superior optical features. The study presents atomic force microscopy of biological optical structures on butterfly wings. The bright blue and dark black color scales exhibit the different topography. These scales were compared to the visually the same color scales of other two species of butterflies. The histograms of heights distribution are presented and show similar results for the scales of one color for different species

    AFM study of structure influence on butterfly wings coloration

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    This study describes the structural coloration of the butterfly Vanessa Atalanta wings and shows how the atomic force microscopy (AFM) can be applied to the study of wings morphology and wings surface behavior under the temperature. The role of the wings morphology in colors was investigated. Different colors of wings have different topology and can be identified by them. AFM in semi-contact mode was used to study the wings surface. The wing surface area, which is close to the butterfly body, has shiny brown color and the peak of surface roughness is about 600 nm. The changing of morphology at different temperatures is shown

    Substrate Preparation for Manufacturing of Aluminum Nitride Layers

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    Aluminum nitrides layers prepared on sapphire substrates are examined. The substrate surface was treated by dry plasma etching. The morphology of aluminum nitride thin films was studied by atomic force microscopy. Lateral force atomic force microscopy was used to study the morphology heterogeneity. The dependence of films morphology on the formation conditions has been defined. The objective of the study contributes to the improvement of technological process of dry etching and film deposition

    Theoretical and experimental investigation of SiC thin films surface

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    This study describes morphology and structure of SiC thin films which are grown up by sublimation epitaxy in vacuum on the 6H-SiC substrates with thickness from tens of nanometers up to units of micrometers. Fashioned films are quite uniform in surface and volume. The crystal properties of the wafers and epitaxial layers are studied by electron diffraction investigation, X-ray techniques, and scanning probe microscopy. X-ray rocking curves show that structural perfection of SiC films is comparable with the structural perfection of monocrystalline 6H-SiC substrates. Calculated lattice parameters of epilayer by X-ray diffractometry also match with known values for 6H-SiC. Electron-diffraction measurement gives the confirmation of the crystallinity of the obtained layers and it is also proved by scanning probe microscopy. This technology allows making of defect treatment of the wafer in dependence on epitaxial conditions. Fundamental analysis in this field allows optimize conditions of thin films formation with prescribed properties and hence the using of them in the technology for elements of electronic engineering and by this reason the surface of monocrystalline SiC was analyzed
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