Structural and optoelectronical characterization of Si-SiO_2/SiO_2 multilayers with applications in all Si tandem solar cells

SiO_2 multilayers with embedded Si nanocrystals (Si-ncs) were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy (TEM) and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values (10^2 kΩ) of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under "dark" or "illumination" conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique

M. Kabe and al. / Simulation and optimization of the nSiC layer in a nSiC/Si photovoltaic cell Simulation and optimization of the nSiC layer's thickness in a nSiC/Si photovoltaic cell

International audienceSimulations of the emitter layer in 3C-SiC heterostructure solar cells were performed by means of SCAPS to model the optimal thickness and predict the influence on cell's behaviour. Then, the cells have been elaborated by chemical vapor deposition and characterized. The opto-electrical measurements showed an improvement of the absorption of photons in the short wavelengths thanks to the thin layer of the emitter, and the non-degradation in bulk of the base cell. On the front side, the using of Ti/Au contacts also leads to an improvement in the absorption of photons thanks to the low series resistance

Cellules Solaires Silicium : Du matériau aux dispositifs

Les performances des cellules solaires sont conditionnées par plusieurs paramètres intrinsèques au matériau età la technologie mise en oeuvre pour leur élaboration.Au cours de cet article, ces différents aspects seront abordés et illustrés sur des cellules commercialisées ou faisant encorel'objet de recherches. La filière photovoltaïque dominante utilise le silicium cristallin comme semiconducteur de prédilection. Matériau qui couvrebien évidemment la production traditionnelle mais qui intéresse aussi les cellules dites de troisième génération faisant appel à des technologies sophistiquées. Nous illustrerons donc trois stratégies exploratoires sur des cellules silicium : l'obtention de rendements de conversion élevés (cellules dites de 3ème génération), la réduction du coût de la cellule (cellule hétérojonction: OTC-Silicium) et l'utilisation de silicium substrat dopé n.  Solar cells efficiency is mainly controlled by semiconductor properties and technology. In this article these points will be presented and highlighted on commercial and laboratory solar cells. Up to now, photovoltaic route is dominated by crystalline silicon which is involved in production and also in the third generation solar cells. Three strategies will be developed on silicon solar cells: the achievement of high efficiency, the cost reduction of solar cells and the use of n-type silicon as substrate

Structural and optoelectronical characterization of Si-SiO2/SiO2 multilayers with applications in all Si tandem solar cells

SiO2 multilayers with embedded Si nanocrystals Si-ncs were investigated as an approach for developing highly efficient all Si tandem solar cells. The nanostructured samples, fabricated by means of a reactive magnetron sputtering, were structurally and optoelectronically characterized using different techniques. High resolution transmission electron microscopy TEM and energy filtered images in TEM show a high density of Si-nc with uniform sizes below 4 nm, while electrical characterization indicates high resistance values 100 kOhm of these samples. In order to develop a better understanding of the optoelectronical behavior, photocurrent I-V curves were measured, obtaining variations under “dark” or “illumination” conditions. Recombination lifetimes in the order of tenths of nanoseconds were estimated by applying the transverse pump/probe technique

CARACTERISATIONS DES MATERIAUX ET DES DISPOSITIFS POUR LE PHOTOVOLTAIQUE

Doctora

CARACTERISATIONS DES MATERIAUX ET DES DISPOSITIFS POUR LE PHOTOVOLTAIQUE

Doctora