Atom chips on direct bonded copper substrates

We present the use of direct bonded copper (DBC) for the straightforward fabrication of high power atom chips. Atom chips using DBC have several benefits: excellent copper/substrate adhesion, high purity, thick (> 100 microns) copper layers, high substrate thermal conductivity, high aspect ratio wires, the potential for rapid (< 8 hr) fabrication, and three dimensional atom chip structures. Two mask options for DBC atom chip fabrication are presented, as well as two methods for etching wire patterns into the copper layer. The wire aspect ratio that optimizes the magnetic field gradient as a function of power dissipation is determined to be 0.84:1 (height:width). The optimal wire thickness as a function of magnetic trapping height is also determined. A test chip, able to support 100 A of current for 2 s without failing, is used to determine the thermal impedance of the DBC. An assembly using two DBC atom chips to provide magnetic confinement is also shown.Comment: 8 pages, 5 figure

High throughput scribing for the manufacture of LED components

This paper is about high throughput scribing for the manufacture of LED components. It was presented at the Photonics West conference in 2004

Fabrication of high aspect ratio microfluidic devices using direct FS ablation

We present a single stage direct fs ablation results which show that it is possible to make high quality and high aspect ratio devices in a single stage process using a CAD optimised approach

Laser Direct Write micro-fabrication of large area electronics on flexible substrates

Symposium CC on Laser and Plasma Processing for Advanced Applications in Material Science held during the Annual Spring Meeting of the European-Materials-Research-Society (E-MRS), Lille, FRANCE, MAY 11-15, 2015International audienceTo date, Laser Direct Write (LDW) techniques, such as Laser Induced Forward Transfer (LIFT), selective laser ablation and selective laser sintering of metal nanoparticle (NP) ink layers are receiving growing attention for the printing of uniform and well-defined conductive patterns with resolution down to 10 mu m. For flexible substrates in particular, selective laser sintering of such NP patterns has been widely applied, as a low temperature and high resolution process compatible with large area electronics. In this work, LDW of silver NP inks has been carried out on polyethylene-terephthalate (PET), polyethylenenaphthalate (PEN) and polyimide (PI) substrates to achieve low electrical resistivity electrodes. In more detail, high speed short pulsed (picosecond and nanosecond) lasers with repetition rates up to 1 MHz were used to print (LIFT) metal NP inks. We thus achieved uniform and continuous patterns with a minimum feature size of 1 mu m and a total footprint larger than 1 cm(2). Next, the printed patterns were laser sintered with ns pulses at 532 nm over a wide laser fluence window, resulting in an electrical resistivity of 10 mu Omega cm. We carried out spatial beam shaping experiments to achieve a top-hat laser intensity profile and employed selective laser ablation of thin films (thickness on the order of 100 nm) to produce silver micro-electrodes with a resolution on the order of 10 pin and a low line edge roughness. Laser sintering was combined with laser ablation to constitute a fully autonomous micro-patterning technique of metallic micro-features, with a 10 pin resolution and geometrical characteristics tuned for interdigitated electrodes for sensor applications. (C) 2015 Elsevier B.V. All rights reserved