Electron-ion recombination of Si IV forming Si III: Storage-ring measurement and multiconfiguration Dirac-Fock calculations

The electron-ion recombination rate coefficient for Si IV forming Si III was measured at the heavy-ion storage-ring TSR. The experimental electron-ion collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic recombination (DR) resonances associated with 3s to nl core excitations, 2s 2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations, and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity) core excitations. The experimental DR results are compared with theoretical calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l' (n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR rate coefficients for Si IV forming Si III are derived and compared with previously available results.Comment: 13 pages, 9 figures, 3 tables. Accepted for publication in Physical Review

Reverse-domain superconductivity in superconductor-ferromagnet hybrids: effect of a vortex-free channel on the symmetry of I-V characteristics

We demonstrate experimentally that the presence of a single domain wall in an underlying ferromagnetic BaFe_{12}O_{19} substrate can induce a considerable asymmetry in the current (I) - voltage (V) characteristics of a superconducting Al bridge. The observed diode-like effect, i.e. polarity-dependent critical current, is associated with the formation of a vortex-free channel inside the superconducting area which increases the total current flowing through the superconducting bridge without dissipation. The vortex-free region appears only for a certain sign of the injected current and for a limited range of the external magnetic field

Buchbesprechungen / Book Reviews

Lüdecke, C., Fritzsche, D., Dullo, C., Thiede, J., Salewski, C. (2016): Book Reviews. Zoological Journal of the Linnean Society 176: 224-225, DOI: 10.2312/polarforschung.86.1.72, URL: http://dx.doi.org/10.2312/polarforschung.86.1.7

Crossover between different regimes of inhomogeneous superconductivity in planar superconductor-ferromagnet hybrids

We studied experimentally the effect of a stripe-like domain structure in a ferromagnetic BaFe_{12}O_{19} substrate on the magnetoresistance of a superconducting Pb microbridge. The system was designed in such a way that the bridge is oriented perpendicular to the domain walls. It is demonstrated that depending on the ratio between the amplitude of the nonuniform magnetic field B_0, induced by the ferromagnet, and the upper critical field H_{c2} of the superconducting material, the regions of the reverse-domain superconductivity in the H-T plane can be isolated or can overlap (H is the external magnetic field, T is temperature). The latter case corresponds to the condition B_0/H_{c2}<1 and results in the formation of superconductivity above the magnetic domains of both polarities. We discovered the regime of edge-assisted reverse-domain superconductivity, corresponding to localized superconductivity near the edges of the bridge above the compensated magnetic domains. Direct verification of the formation of inhomogeneous superconducting states and external-field-controlled switching between normal state and inhomogeneous superconductivity were obtained by low-temperature scanning laser microscopy.Comment: 11 pages, 12 figure

Classical analogy for the deflection of flux avalanches by a metallic layer

Sudden avalanches of magnetic flux bursting into a superconducting sample undergo deflections of their trajectories when encountering a conductive layer deposited on top of the superconductor. Remarkably, in some cases flux is totally excluded from the area covered by the conductive layer. We present a simple classical model that accounts for this behaviour and considers a magnetic monopole approaching a semi-infinite conductive plane. This model suggests that magnetic braking is an important mechanism responsible for avalanche deflection.Comment: 14 pages, 5 figure

Hairpins in the conformations of a confined polymer

If a semiflexible polymer confined to a narrow channel bends around by 180 degrees, the polymer is said to exhibit a hairpin. The equilibrium extension statistics of the confined polymer are well understood when hairpins are vanishingly rare or when they are plentiful. Here we analyze the extension statistics in the intermediate situation via experiments with DNA coated by the protein RecA, which enhances the stiffness of the DNA molecule by approximately one order of magnitude. We find that the extension distribution is highly non-Gaussian, in good agreement with Monte Carlo simulations of confined discrete wormlike chains. We develop a simple model that qualitatively explains the form of the extension distribution. The model shows that the tail of the distribution at short extensions is determined by conformations with one hairpin.Comment: Revised version. 22 pages, 7 figures, 2 tables, supplementary materia

The local adsorption structure of benzene on Si(001)-(2 × 1): a photoelectron diffraction investigation

Scanned-energy mode C 1s photoelectron diffraction has been used to investigate the local adsorption geometry of benzene on Si(001) at saturation coverage and room temperature. The results show that two different local bonding geometries coexist, namely the 'standard butterfly' (SB) and 'tilted bridge' (TB) forms, with a composition of 58 ± 29% of the SB species. Detailed structural parameter values are presented for both species including Si–C bond lengths. On the basis of published measurements of the rate of conversion of the SB to the TB form on this surface, we estimate that the timescale of our experiment is sufficient for achieving equilibrium, and in this case our results indicate that the difference in the Gibbs free energy of adsorption, ΔG(TB)−ΔG(SB), is in the range −0.023 to +0.049 eV. We suggest, however, that the relative concentration of the two species may also be influenced by a combination of steric effects influencing the kinetics, and a sensitivity of the adsorption energies of the adsorbed SB and TB forms to the nature of the surrounding benzene molecules

Element-Specific Depth Profile of Magnetism and Stoichiometry at the La0.67Sr0.33MnO3/BiFeO3 Interface

Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transition metal oxide heterostructures. In a simultaneous approach we have used polarized neutron and resonant X-ray reflectometry to determine the magnetic profile across atomically sharp interfaces of ferromagnetic La0.67Sr0.33MnO3 / multiferroic BiFeO3 bi-layers with sub-nanometer resolution. In particular, the X-ray resonant magnetic reflectivity measurements at the Fe and Mn resonance edges allowed us to determine the element specific depth profile of the ferromagnetic moments in both the La0.67Sr0.33MnO3 and BiFeO3 layers. Our measurements indicate a magnetically diluted interface layer within the La0.67Sr0.33MnO3 layer, in contrast to previous observations on inversely deposited layers. Additional resonant X-ray reflection measurements indicate a region of an altered Mn- and O-content at the interface, with a thickness matching that of the magnetic diluted layer, as origin of the reduction of the magnetic moment.Comment: 13 pages, 4 figures, supplemental material include

Measuring Charge Transport in an Amorphous Semiconductor Using Charge Sensing

We measure charge transport in hydrogenated amorphous silicon (a-Si:H) using a nanometer scale silicon MOSFET as a charge sensor. This charge detection technique makes possible the measurement of extremely large resistances. At high temperatures, where the a-Si:H resistance is not too large, the charge detection measurement agrees with a direct measurement of current. The device geometry allows us to probe both the field effect and dispersive transport in the a-Si:H using charge sensing and to extract the density of states near the Fermi energy.Comment: 4 pages, 4 figure