Optimizing an array of antennas for cellular coverage from a high altitude platform

In a wireless communications network served by a high altitude platform (HAP) the cochannel interference is a function of the antenna beamwidth, angular separation and. sidelobe level. At the millimeter wave frequencies proposed for HAPs, an array of aperture type antennas on the platform is a practicable solution for serving the cells. We present a method for predicting cochannel interference based on curve-fit approximations for radiation patterns of elliptic beams which illuminate cell edges with optimum power, and a means of estimating optimum beamwidths for each cell of a regular hexagonal layout. The method is then applied to a 121 cell architecture. Where sidelobes are modeled As a flat floor at 40-dB below peak directivity, a cell cluster size of four yields carrier-to-interference ratios (CIRs), which vary from 15 dB at cell edges to 27 dB at cell centers. On adopting a cluster size of seven, these figures increase, respectively, to 19 and 30 dB. On reducing the sidelobe level, the. improvement in CIR can be quantified. The method also readily allows for regions of overlapping channel coverage to be shown

Measuring cellular migration with image processing

An image-processing algorithm for the analysis of migration of vascular endothelial cells in culture is presented. The algorithm correctly detected the cellular regions on either side of an artificial ‘wound’ made by dragging a sterile pipette tip across the monolayer of cells (scratch wound assay). Frequency filtering and mathematical morphology were used to approximate the boundaries of cellular regions. This allowed the measurement of the distance between the regions, and therefore the migration rates, regardless of the orientation of the wound and even in cases where the cells were sparse and not tightly packed

Quantum transport of two-dimensional Dirac fermions in SrMnBi2

We report two-dimensional quantum transport in SrMnBi$_2$ single crystals. The linear energy dispersion leads to the unusual nonsaturated linear magnetoresistance since all Dirac fermions occupy the lowest Landau level in the quantum limit. The transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field linear-field dependence. With increase in the temperature, the critical field $B^*$ increases and the temperature dependence of $B^*$ satisfies quadratic behavior which is attributed to the Landau level splitting of the linear energy dispersion. The effective magnetoresistant mobility $\mu_{MR}\sim 3400$ cm$^2$/Vs is derived. Angular dependent magnetoresistance and quantum oscillations suggest dominant two-dimensional (2D) Fermi surfaces. Our results illustrate the dominant 2D Dirac fermion states in SrMnBi$_2$ and imply that bulk crystals with Bi square nets can be used to study low dimensional electronic transport commonly found in 2D materials like graphene.Comment: 5 papges, 4 figure

Two dimensional Dirac fermions and quantum magnetoresistance in CaMnBi2_2

We report two dimensional Dirac fermions and quantum magnetoresistance in single crystals of CaMnBi$_2$. The non-zero Berry's phase, small cyclotron resonant mass and first-principle band structure suggest the existence of the Dirac fermions in the Bi square nets. The in-plane transverse magnetoresistance exhibits a crossover at a critical field $B^*$ from semiclassical weak-field $B^2$ dependence to the high-field unsaturated linear magnetoresistance ($\sim 120$ in 9 T at 2 K) due to the quantum limit of the Dirac fermions. The temperature dependence of $B^*$ satisfies quadratic behavior, which is attributed to the splitting of linear energy dispersion in high field. Our results demonstrate the existence of two dimensional Dirac fermions in CaMnBi$_2$ with Bi square nets.Comment: 5 pages, 4 figure

Multiband effects on beta-FeSe single crystals

We present the upper critical fields Hc2(T) and Hall effect in beta-FeSe single crystals. The Hc2(T) increases as the temperature is lowered for field applied parallel and perpendicular to (101), the natural growth facet of the crystal. The Hc2(T) for both field directions and the anisotropy at low temperature increase under pressure. Hole carriers are dominant at high magnetic fields. However, the contribution of electron-type carriers is significant at low fields and low temperature. Our results show that multiband effects dominate Hc2(T) and electronic transport in the normal state

Unusual metamagnetism in CeIrIn5_5

We report a high field investigation (up to 45 T) of the metamagnetic transition in CeIrIn$_5$ with resistivity and de-Haas-van-Alphen (dHvA) effect measurements in the temperature range 0.03-1 K. As the magnetic field is increased the resistivity increases, reaches a maximum at the metamagnetic critical field, and falls precipitously for fields just above the transition, while the amplitude of all measurable dHvA frequencies are significantly attenuated near the metamagnetic critical field. However, the dHvA frequencies and cyclotron masses are not substantially altered by the transition. In the low field state, the resistivity is observed to increase toward low temperatures in a singular fashion, a behavior that is rapidly suppressed above the transition. Instead, in the high field state, the resistivity monotonically increases with temperature with a dependence that is more singular than the iconic Fermi-liquid, temperature-squared, behavior. Both the damping of the dHvA amplitudes and the increased resistivity near the metamagnetic critical field indicate an increased scattering rate for charge carriers consistent with critical fluctuation scattering in proximity to a phase transition. The dHvA amplitudes do not uniformly recover above the critical field, with some hole-like orbits being entirely suppressed at high fields. These changes, taken as a whole, suggest that the metamagnetic transition in CeIrIn$_5$ is associated with the polarization and localization of the heaviest of quasiparticles on the hole-like Fermi surface.Comment: 29 pages, 9 figure

Fermi Surface of Alpha-Uranium at Ambient Pressure

We have performed de Haas-van Alphen measurements of the Fermi surface of alpha-uranium single crystals at ambient pressure within the alpha-3 charge density wave (CDW) state from 0.020 K - 10 K and magnetic fields to 35 T using torque magnetometry. The angular dependence of the resulting frequencies is described. Effective masses were measured and the Dingle temperature was determined to be 0.74 K +/- 0.04 K. The observation of quantum oscillations within the alpha-3 CDW state gives new insight into the effect of the charge density waves on the Fermi surface. In addition we observed no signature of superconductivity in either transport or magnetization down to 0.020 K indicating the possibility of a pressure-induced quantum critical point that separates the superconducting dome from the normal CDW phase.Comment: 11 pages, 4 figures, 3 table