Quantum Hall effect on centimeter scale chemical vapor deposited graphene films

We report observations of well developed half integer quantum Hall effect (QHE) on mono layer graphene films of 7 mm \times 7 mm in size. The graphene films are grown by chemical vapor deposition (CVD) on copper, then transferred to SiO_{2} /Si substrates, with typical carrier mobilities \approx 4000 cm^{2} /Vs. The large size graphene with excellent quality and electronic homogeneity demonstrated in this work is promising for graphene-based quantum Hall resistance standards, and can also facilitate a wide range of experiments on quantum Hall physics of graphene and practical applications exploiting the exceptional properties of graphene

UV/Ozone treatment to reduce metal-graphene contact resistance

We report reduced contact resistance of single-layer graphene devices by using ultraviolet ozone (UVO) treatment to modify the metal/graphene contact interface. The devices were fabricated from mechanically transferred, chemical vapor deposition (CVD) grown, single layer graphene. UVO treatment of graphene in the contact regions as defined by photolithography and prior to metal deposition was found to reduce interface contamination originating from incomplete removal of poly(methyl methacrylate) (PMMA) and photoresist. Our control experiment shows that exposure times up to 10 minutes did not introduce significant disorder in the graphene as characterized by Raman spectroscopy. By using the described approach, contact resistance of less than 200 {\Omega} {\mu}m was achieved, while not significantly altering the electrical properties of the graphene channel region of devices.Comment: 17 pages, 5 figure

Graphene as Transparent Electrode for Direct Observation of Hole Photoemission from Silicon to Oxide

The outstanding electrical and optical properties of graphene make it an excellent alternative as a transparent electrode. Here we demonstrate the application of graphene as collector material in internal photoemission (IPE) spectroscopy; enabling the direct observation of both electron and hole injections at a Si/Al2O3 interface and successfully overcoming the long-standing difficulty of detecting holes injected from a semiconductor emitter in IPE measurements. The observed electron and hole barrier heights are 3.5 eV and 4.1 eV, respectively. Thus the bandgap of Al2O3 can be further deduced to be 6.5 eV, in close agreement with the valued obtained by vacuum ultraviolet spectroscopic ellipsometry analysis. The detailed optical modeling of a graphene/Al2O3/Si stack reveals that by using graphene in IPE measurements the carrier injection from the emitter is significantly enhanced and the contribution of carrier injection from the collector electrode is minimal. The method can be readily extended to various IPE test structures for a complete band alignment analysis and interface characterization.Comment: 15 pages, 5 figure

Polarization of Bi2Te3 Thin Film in a Floating-Gate Capacitor Structure

Metal-Oxide-Semiconductor (MOS) capacitors with Bi2Te3 thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi2Te3 thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi2Te3, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal - oxide - semiconductor compatibility, the Bi2Te3 embedded MOS structures are very interesting for memory application. © 2014 AIP Publishing LLC

Broadband optical properties of large-area monolayer CVD molybdenum disulfide

Recently emerging large-area single-layer MoS[subscript 2] grown by chemical vapor deposition has triggered great interest due to its exciting potential for applications in advanced electronic and optoelectronic devices. Unlike gapless graphene, MoS[subscript 2] has an intrinsic band gap in the visible which crosses over from an indirect to a direct gap when reduced to a single atomic layer. In this paper, we report a comprehensive study of fundamental optical properties of MoS[subscript 2] revealed by optical spectroscopy of Raman, photoluminescence, and vacuum ultraviolet spectroscopic ellipsometry. A band gap of 1.42 eV is determined by the absorption threshold of bulk MoS[subscript 2] that shifts to 1.83 eV in monolayer MoS[subscript 2]. We extracted the high precision dielectric function up to 9.0 eV, which leads to the identification of many unique interband transitions at high symmetry points in the MoS[subscript 2] momentum space. The positions of the so-called A and B excitons in single layers are found to shift upwards in energy compared with those of the bulk form and have smaller separation because of the decreased interactions between the layers. A very strong optical critical point predicted to correspond to a quasiparticle gap is observed at 2.86 eV, which is attributed to optical transitions along the parallel bands between the M and Γ points in the reduced Brillouin zone. The absence of the bulk MoS[subscript 2] spin-orbit interaction peak at ~3.0 eV in monolayer MoS[subscript 2] is, as predicted, the consequence of the coalescence of nearby excitons. A higher energy optical transition at 3.98 eV, commonly occurring in bulk semiconductors, is associated with a combination of several critical points. Additionally, extending into the vacuum ultraviolet energy spectrum are a series of newly observed oscillations representing optical transitions from valence bands to higher conduction bands of the monolayer MoS[subscript 2] complex band structure. These optical transitions herein reported enhance our understanding of monolayer MoS[subscript 2] as well as of two-dimensional systems in general and thus provide informative guidelines for MoS[subscript 2] optical device designs and theoretical considerations.China. Ministry of Science and Technology (Grant 2011CB921904)China. Ministry of Education (Grant 113003A)National Natural Science Foundation (China) (Grant 61321001)Municipal Science & Technology Commission. Beijing Natural Science Foundation (grant Z141100003814006)National Science Foundation (U.S.) (STC Center for Integrated Quantum Materials Grant DMR-1231319