494 research outputs found

    Antiferromagnetic Critical Fluctuations in BaFe2_2As2_2

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    Magnetic correlations near the magneto-structural phase transition in the bilayer iron pnictide parent compound, BaFe2_2As2_2, are measured. In close proximity to the antiferromagnetic phase transition in BaFe2_2As2_2, a crossover to three dimensional critical behavior is anticipated and has been preliminarily observed. Here we report complementary measurements of two-dimensional magnetic fluctuations over a broad temperature range about TN_N. The potential role of two-dimensional critical fluctuations in the magnetic phase behavior of BaFe2_2As2_2 and their evolution near the anticipated crossover to three dimensional critical behavior and long-range order are discussed.Comment: 6 pages, 4 figures; Accepted for publication in Physical Review

    Heat capacity study of BaFe2_{2}As2_{2}: effects of annealing

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    Heat-capacity, X-ray diffraction, and resistivity measurements on a high-quality BaFe2_{2}As2_{2} sample show an evolution of the magneto-structural transition with successive annealing periods. After a 30-day anneal the resistivity in the (ab) plane decreases by more than an order of magnitude, to 12 μΩ\mu\Omegacm, with a residual resistance ratio \sim36; the heat-capacity anomaly at the transition sharpens, to an overall width of less than K, and shifts from 135.4 to 140.2 K. The heat-capacity anomaly in both the as-grown sample and after the 30-day anneal shows a hysteresis of \sim0.15 K, and is unchanged in a magnetic field μ0\mu_{0}H = 14 T. The X-ray and heat-capacity data combined suggest that there is a first order jump in the structural order parameter. The entropy of the transition is reported

    Structural and Antiferromagnetic Properties of Ba(Fe1−x−yCoxRhy)2As2 compounds

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    We present a systematic investigation of the electrical, structural, and antiferromagnetic properties for the series of Ba(Fe1 −x−yCoxRhy)2As2 compounds with fixed x ≈ 0.027 and 0 ≤ y ≤ 0.035. We compare our results for the Co-Rh doped Ba(Fe1−x−yCoxRhy)2As2 compounds with the Co doped Ba(Fe1−xCox)2As2 compounds. We demonstrate that the electrical, structural, antiferromagnetic, and superconducting properties of the Co-Rh doped compounds are similar to the properties of the Co doped compounds. We find that the overall behaviors of Ba(Fe1−x−yCoxRhy)2As2 and Ba(Fe1−xCox)2As2 compounds are very similar when the total number of extra electrons per Fe/TM (TM=transition metal) site is considered, which is consistent with the rigid band model. Despite the similarity, we find that the details of the transitions, for example, the temperature difference between the structural and antiferromagnetic transition temperatures and the incommensurability of the antiferromangetic peaks, are different between Ba(Fe1−x−yCoxRhy)2As2 and Ba(Fe1−xCox)2As2 compounds

    Conformity of spin fluctuations in alkali-metal iron selenide superconductors inferred from the observation of a magnetic resonant mode in K(x)Fe(2-y)Se(2)

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    Spin excitations stemming from the metallic phase of the ferrochalcogenide superconductor K(0.77)Fe(1.85)Se(2) (T_c=32 K) were mapped out in the ab plane by means of the time-of-flight neutron spectroscopy. We observed a magnetic resonant mode at Q_res=(1/2 1/4), whose energy and in-plane shape are almost identical to those in the related compound Rb(0.8)Fe(1.6)Se(2). This lets us infer that there is a unique underlying electronic structure of the bulk superconducting phase K(x)Fe(2)Se(2), which is universal for all alkali-metal iron selenide superconductors and stands in contrast to the doping-tunable phase diagrams of the related iron pnictides. Furthermore, the spectral weight of the resonance on the absolute scale, normalized to the volume fraction of the superconducting phase, is several times larger than in optimally doped BaFe(2-x)Co(x)As(2). We also found no evidence for any additional low-energy branches of spin excitations away from Q_res. Our results provide new input for theoretical models of the spin dynamics in iron based superconductors

    Spin dynamics near a putative antiferromagnetic quantum critical point in Cu substituted BaFe2_2As2_2 and its relation to high-temperature superconductivity

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    We present the results of elastic and inelastic neutron scattering measurements on non-superconducting Ba(Fe0.957{_{0.957}}Cu0.043{_{0.043}})2{_2}As2{_2}, a composition close to a quantum critical point between AFM ordered and paramagnetic phases. By comparing these results with the spin fluctuations in the low Cu composition as well as the parent compound BaFe2_2As2_2 and superconducting Ba(Fe1x_{1-x}Nix_x)2_2As2_2 compounds, we demonstrate that paramagnon-like spin fluctuations are evident in the antiferromagnetically ordered state of Ba(Fe0.957_{0.957}Cu0.043_{0.043})2_2As2_2, which is distinct from the AFM-like spin fluctuations in the superconducting compounds. Our observations suggest that Cu substitution decouples the interaction between quasiparticles and the spin fluctuations. We also show that the spin-spin correlation length, ξ(T){\xi(T)}, increases rapidly as the temperature is lowered and find ω/T{\omega/T} scaling behavior, the hallmark of quantum criticality, at an antiferromagnetic quantum critical point.Comment: 10 pages, 7 figure

    Autism as a disorder of neural information processing: directions for research and targets for therapy

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    The broad variation in phenotypes and severities within autism spectrum disorders suggests the involvement of multiple predisposing factors, interacting in complex ways with normal developmental courses and gradients. Identification of these factors, and the common developmental path into which theyfeed, is hampered bythe large degrees of convergence from causal factors to altered brain development, and divergence from abnormal brain development into altered cognition and behaviour. Genetic, neurochemical, neuroimaging and behavioural findings on autism, as well as studies of normal development and of genetic syndromes that share symptoms with autism, offer hypotheses as to the nature of causal factors and their possible effects on the structure and dynamics of neural systems. Such alterations in neural properties may in turn perturb activity-dependent development, giving rise to a complex behavioural syndrome many steps removed from the root causes. Animal models based on genetic, neurochemical, neurophysiological, and behavioural manipulations offer the possibility of exploring these developmental processes in detail, as do human studies addressing endophenotypes beyond the diagnosis itself

    Growth and morphology of 0.80eV photoemitting indium nitride nanowires

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    InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has the smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices

    P300 and uncertainty reduction in a concept identification task.

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    The relationship between the amplitude of P300, the mean amplitude of the Slow Wave, and uncertainty reduction after (dis)confirmation of hypotheses was studied in a Concept-Identification task. The subjects had to categorize stimuli according to a conceptual rule (joint denial or exclusion) and to rate the confidence that their classification was correct. Three types of feedback were distinguished: confirming (subject's categorization was correct), disconfirming (subject's categorization was incorrect), and non-informative feedback. The EEG was averaged separately according to the three types of feedback and the two confidence ratings (low, high). The data showed the predicted interaction between type of feedback and confidence level. A larger P300 amplitude turned up after confirming feedback when the subject was less confident, than when he was more confident. The reverse was found after disconfirming feedback. The P300 amplitude after non-informative feedback was not influenced by confidence. The mean amplitude of the Slow Wave showed approximately the same interaction pattern. The results were interpreted in terms of changes in the probability of hypotheses which subjects use to categorize stimuli in a Concept-Identification task
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