The Sjögren’s syndrome – an interdisciplinary problem viewed by a dentist

Sjögren’s syndrome is common and chronic disease. So far there is no effective therapy. In 90% of cases, it affects women, usually in the peri-menopausal period. Many systems and organs may be involved in the course of the disease, thus it is interesting for many medical specialists. There are primary and secondary Sjögren’s syndromes, both characterized mainly by xerostomia and keratoconjunctivitis. The paper reviews basic symptoms in the oral cavity involving the oral mucosa, lips, tongue, gingiva, teeth and periodontium. Treatment and prevention in a dental clinic are also described. Lifestyle and pharmacotherapy to avoid symptom aggravation are additionally considered

Préparation de phosphomolybdates (tungstates) par réaction à l’état solide et par précipitation : réactivité dans la conversion du propane-2-ol

La méthode de préparation des hétéropolyanions est un facteur déterminant pour leurs propriétés catalytiques. La possibilité d'élaborer des catalyseurs par différentes voies pourrait permettre une meilleure compréhension de l'origine de leur activité. Une nouvelle voie de synthèse, par réaction à l'état solide, d'hétéropolysels 12- molybdo(tungsto)phosphates alcalins (césium, rubidium et potassium) à structure de Keggin a été mise au point. Les hétéropolysels sont obtenus anhydres et présentent la particularité d'avoir de très faibles surfaces spécifiques (< 3 m2.g-1) et une absence de porosité. Des hétéropolysels poreux, structuralement analogues aux précédents, ont été préparés en solution aqueuse. Ces différents échantillons ont été testés dans la réaction de conversion du propan-2-ol dans le but de déterminer leurs caractères acido-basique et rédox. Les résultats catalytiques obtenus dépendent nettement de la méthode de synthèse

514 Homozygotie pour le variant rs2076530 de BTNL2 et sarcoïdose familiale : Étude génétique des 5 membres d’une même famille

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Albert Cohen et Julien Green, ces romanciers &quot;français&quot; venus d&#039;ailleurs

Romanciers de l\u27inquiétude existentielle, Albert Cohen et Julien Green ont une identité duelle, voire cosmopolite. Tiraillés entre terre d\u27origine et terre d\u27accueil, ces écrivains venus d\u27ailleurs partagent des expériences intérieures similaires et un même sentiment d\u27étrangeté dans le monde. Ce trouble identitaire, placé au coeur de la fiction, a porté avec acuité le questionnement sur la langue littéraire, et plus largement sur l’identité du roman au XXe siècle

The French horse industry in 2030: scenarios to inform decision-making

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High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

International audienceThe application of AlN films in optoelectronics, sensors and high temperature coatings is strongly dependent on the nano-micro-structure of the film, impurity level and defect density. AlN epitaxial thin (0.5-10 mu m) and thick polycrystalline (>10 mu m) films were grown on different foreign substrates (sapphire, silicon carbide, graphite) and single AlN crystals by Chemical Vapor Deposition (CVD), also called Hydride Vapor Phase Epitaxy (HVPE), at high temperature (1200-1750 degrees C). In the first part of this paper, polycrystalline growth of thick films (>10 mu m) prepared at high growth rate (>100 mu m.h(-1)) was performed on graphite substrates to study the preferential orientation of the films. AlN/W multilayers were deposited on silicon carbide composites to increase their performance at high temperature in aggressive conditions. Such multilayer materials can be used for the cladding of nuclear fuel. The second part of this paper concerns the characterization of epitaxial films, including their crystalline state, surface morphology, and inherent and thermally induced stress which inevitably leads to high defect densities and even cracking. The full-width at half-maximum (FWHM) of X-ray rocking curves of the grown AlN layers exhibited very large values (several thousand arcsec), and they became steeply deteriorated with increasing growth rate. To improve the crystalline quality of AlN layer, well-known growth techniques, such as multi-step growth using buffer layers, were used at temperatures above 1200 degrees C in order to lower the disorientation to 300 arcsec. The applications of such "templates" for deep UV light emitting diodes (UV LED) and surface acoustic wave sensors (SAW) are discussed

High temperature chemical vapor deposition of aluminum nitride, growth and evaluation

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High Temperature Chemical Vapor Deposition of thick (5 to 20 mm) Aluminum nitride layers

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CFD modeling of the high-temperature HVPE growth of aluminum nitride layers on c-plane sapphire: from theoretical chemistry to process evaluation

International audienceThis study presents numerical modeling based on a relatively limited number of gas-phase and surface reactions to simulate the growth rate of aluminum nitride layers on AlN templates and c-plane sapphire in a broad range of deposition parameters. Modeling results have been used to design particular experiments in order to understand the influence of the process parameters on the crystal quality of AlN layers grown in a high-temperature hydride vapor-phase epitaxy process fed with NH3, AlCl3, and H-2. Modeling results allow to access to very interesting local quantities such as the surface site ratio and local supersaturation. The developed universal model starting from local parameters might be easily transferred to other reactor geometry and process conditions. Among the investigated parameters (growth rate, temperature, local supersaturation, gas-phase N/Al ratio, and local surface site N/Al ratio), only the growth rate/supersaturation or growth rate/temperature relationships exhibit a clear process window to use in order to succeed in growing epitaxial AlN layers on c-plane sapphire or AlN templates. Gas-phase N/Al ratio and local surface site N/Al ratio seem to play only a secondary role in AlN epitaxial growt