Total integrated dose testing of solid-state scientific CD4011, CD4013, and CD4060 devices by irradiation with CO-60 gamma rays

The total integrated dose response of three CMOS devices manufactured by Solid State Scientific has been measured using CO-60 gamma rays. Key parameter measurements were made and compared for each device type. The data show that the CD4011, CD4013, and CD4060 produced by this manufacturers should not be used in any environments where radiation levels might exceed 1,000 rad(Si)

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose

Total-dose radiation effects data for semiconductor devices: 1985 supplement, volume 1

Steady-state, total-dose radiation test data are provided, in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 provides total-dose radiation test data on integrated circuits. Volume 1 of this 1985 Supplement contains new total-dose radiation test data generated since the August 1, 1981 release date of the original Volume 1. Publication of Volume 2 of the 1985 Supplement will follow that of Volume 1 by approximately three months

Heavy ion induced Single Event Phenomena (SEP) data for semiconductor devices from engineering testing

The accumulation of JPL data on Single Event Phenomena (SEP), from 1979 to August 1986, is presented in full report format. It is expected that every two years a supplement report will be issued for the follow-on period. This data for 135 devices expands on the abbreviated test data presented as part of Refs. (1) and (3) by including figures of Single Event Upset (SEU) cross sections as a function of beam Linear Energy Transfer (LET) when available. It also includes some of the data complied in the JPL computer in RADATA and the SPACERAD data bank. This volume encompasses bipolar and MOS (CMOS and MHNOS) device data as two broad categories for both upsets (bit-flips) and latchup. It also includes comments on less well known phenomena, such as transient upsets and permanent damage modes

Implementing quantum gates through scattering between a static and a flying qubit

We investigate whether a two-qubit quantum gate can be implemented in a scattering process involving a flying and a static qubit. To this end, we focus on a paradigmatic setup made out of a mobile particle and a quantum impurity, whose respective spin degrees of freedom couple to each other during a one-dimensional scattering process. Once a condition for the occurrence of quantum gates is derived in terms of spin-dependent transmission coefficients, we show that this can be actually fulfilled through the insertion of an additional narrow potential barrier. An interesting observation is that under resonance conditions the above enables a gate only for isotropic Heisenberg (exchange) interactions and fails for an XY interaction. We show the existence of parameter regimes for which gates able to establish a maximum amount of entanglement can be implemented. The gates are found to be robust to variations of the optimal parameters.Comment: 7 pages, 3 figure

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514)

La precarización del Trabajo Social a través del voluntariado social: nuevos modos sociales de regulación en la relación capital-trabajo en el contexto puertorriqueño 2014-15

The precarization of social work through social volunteerism is scarcely studied in Puerto Rico. To explain how affects the volunteering like precarious factor in the profession, we used the theories of the French School of Regulation and the McDonaldization. These theories study the socio-institutional relations since its crystallization. As part of this crystallization it also explain the dynamics of State assuming public policies to shift their responsibilities to the private sphere. Social responsibilities become the subject of explicit international competition. Jessop (1993) calls this: “hollowed out” Shumpeterian workfare state. This type of state crystallized and systematized from public policies and the normalization of economic trends, such as laws governing incorporation. In order to understand this we use the speech analysis technique on Law number 261 of 2004 and the public debate to preapproval of it. In Puerto Rico this law, also known as the Volunteer Act of Puerto Rico, regulates social volunteering. In this process, social volunteering is established as a new working relationship simultaneously creating new bureaucratic institutions and private nonprofit organizations are created. New ways of working are justified through discourses of citizen participation and social responsibility. This has an effect of savings and profits for the capitalist classes, in this case resulting into economic and social losses for social workers.La precarización del trabajo social mediante el voluntariado social es un tema poco estudiado en Puerto Rico. Utilizamos teorías de la Escuela de la Regulación Francesa y la mcdonaldización de Ritzer (2007) para explicar cómo incide el voluntariado en la precarización de la profesión. Estas teorías estudian las relaciones socioinstitucionales desde su cristalización. Además, explican las dinámicas del Estado asumiendo políticas públicas para desplazar sus responsabilidades a la esfera privada. Jessop (1993) le llama a esto: Ahuecamiento shumpeteriano del Estado benefactor. Estas dinámicas se cristalizan y sistematizan a partir de políticas públicas y la normalización de las nuevas tendencias económicas. Observamos este proceso haciendo un análisis crítico del discurso (Van Dijk, 1999) de la Ley 261 del 2004 y del debate público de preaprobación de la misma. Esta Ley regula el voluntariado social en Puerto Rico y es conocida como Ley del Voluntariado de Puerto Rico. Observamos que el voluntariado social se instituye como nueva forma de trabajo y fomenta nuevas relaciones burocráticas entre instituciones y organizaciones privadas del tercer sector. Las nuevas formas de trabajo se justifican a través de discursos de participación ciudadana y responsabilidad social. Esto tiene un efecto de ahorros y ganancias para las clases capitalistas, tornándose en pérdidas económicas y sociales para los y las trabajadores/as sociales en este caso

Effects of Al doping on the structural and electronic properties of Mg(1-x)Al(x)B2

We have studied the structural and electronic properties of Mg(1-x)Al(x)B2 within the Virtual Crystal Approximation (VCA) by means of first-principles total-energy calculations. Results for the lattice parameters, the electronic band structure, and the Fermi surface as a function of Al doping for 0<x<0.6 are presented. The ab initio VCA calculations are in excellent agreement with the experimentally observed change in the lattice parameters of Al doped MgB2. The calculations show that the Fermi surface associated with holes a the boron planes collapses gradually with aluminum doping and vanishes for x=0.56. In addition, an abrupt topological change in the sigma-band Fermi surface was found for x=0.3. The calculated hole density correlates closely with existing experimental data for Tc(x), indicating that the observed loss of superconductivity in Mg(1-x)Al(x)B2 is a result of hole bands filling.Comment: 4 pages (revtex) and 4 figures (postscript