Terahertz surfoluminescence

The cleaving of a solid to form two new surfaces may result in the emission of light. Conventional mechanoluminescence involves the transfer of charge between the two surfaces. We now demonstrate that the ultra-fast separation of charge within a newly-formed surface will lead to the emission of electromagnetic radiation. In contrast to the visible light previously observed and modeled, the intra-surface radiation contains terahertz frequencies. This newmechanism – named here surfoluminescence – introduces a new class of terahertz-frequency emitters. It also may in part explain the recent observation of terahertz emission from peeling adhesive tape

The importance of scattering, surface potential, and vanguard counter-potential in terahertz emission from gallium arsenide

It is well established that under excitation by short (\u3c1 ps), above-band-gap optical pulses, semiconductor surfaces may emit terahertz-frequency electromagnetic radiation via photocarrier diffusion (the dominant mechanism in InAs) or photocarrier drift (dominant in GaAs). Our three-dimensional ensemble Monte Carlo simulations allow multiple physical parameters to vary over wide ranges and provide unique direct insight into the factors controlling terahertz emission. We find for GaAs (in contrast to InAs), scattering and the surface potential are key factors. We further delineate in GaAs (as in InAs) the role of a vanguard counter-potential. The effects of varying dielectric constant, band-gap, and effective mass are similar in both emitter type

Element-Specific Depth Profile of Magnetism and Stoichiometry at the La0.67Sr0.33MnO3/BiFeO3 Interface

Depth-sensitive magnetic, structural and chemical characterization is important in the understanding and optimization of novel physical phenomena emerging at interfaces of transition metal oxide heterostructures. In a simultaneous approach we have used polarized neutron and resonant X-ray reflectometry to determine the magnetic profile across atomically sharp interfaces of ferromagnetic La0.67Sr0.33MnO3 / multiferroic BiFeO3 bi-layers with sub-nanometer resolution. In particular, the X-ray resonant magnetic reflectivity measurements at the Fe and Mn resonance edges allowed us to determine the element specific depth profile of the ferromagnetic moments in both the La0.67Sr0.33MnO3 and BiFeO3 layers. Our measurements indicate a magnetically diluted interface layer within the La0.67Sr0.33MnO3 layer, in contrast to previous observations on inversely deposited layers. Additional resonant X-ray reflection measurements indicate a region of an altered Mn- and O-content at the interface, with a thickness matching that of the magnetic diluted layer, as origin of the reduction of the magnetic moment.Comment: 13 pages, 4 figures, supplemental material include

Ionic and electronic properties of the topological insulator Bi2_2Te2_2Se investigated using β\beta-detected nuclear magnetic relaxation and resonance of 8^8Li

We report measurements on the high temperature ionic and low temperature electronic properties of the 3D topological insulator Bi$_2$Te$_2$Se using ion-implanted $^8$Li $\beta$-detected nuclear magnetic relaxation and resonance. With implantation energies in the range 5-28 keV, the probes penetrate beyond the expected range of the topological surface state, but are still within 250 nm of the surface. At temperatures above ~150 K, spin-lattice relaxation measurements reveal isolated $^8$Li$^{+}$ diffusion with an activation energy $E_{A} = 0.185(8)$ eV and attempt frequency $\tau_{0}^{-1} = 8(3) \times 10^{11}$ s$^{-1}$ for atomic site-to-site hopping. At lower temperature, we find a linear Korringa-like relaxation mechanism with a field dependent slope and intercept, which is accompanied by an anomalous field dependence to the resonance shift. We suggest that these may be related to a strong contribution from orbital currents or the magnetic freezeout of charge carriers in this heavily compensated semiconductor, but that conventional theories are unable to account for the extent of the field dependence. Conventional NMR of the stable host nuclei may help elucidate their origin.Comment: 17 pages, 12 figures, submitted to Phys. Rev.

B-NMR of 8Li+ in rutile TiO2

We report preliminary low-energy B-NMR measurements of 8Li+ implanted in single crystal rutile TiO2 at an applied field of 6.55 T and 300 K. We observe a broad 12 kHz wide quadrupole split resonance with unresolved features and a sharp component at the Larmor frequency. The line broadening may be caused by overlapping multi-quantum transitions or motion of 8Li+ on the scale of its lifetime (1.21 s). We also find spin-lattice relaxation that is relatively fast compared to other wide band gap insulators. The origin of this fast relaxation is also likely quadrupolar and may be due to anisotropic 8Li+ diffusion

Spin depolarization of muonium in mesoporous silica

We report muon spin rotation/relaxation measurements of muonium in mesoporous silica (SBA-15) with a high specific surface area of 600 m2/g. Up to 70 percent of the incoming muons form muonium and escape efficiently into the open pores at all temperatures between 3 and 300K. We present evidence that the interaction with the silica surfaces involves both spin exchange and a transition to a diamagnetic state, possibly due to dangling bonds on the surface. At very low temperatures, below 20K, the interaction between muonium and the silica surfaces is suppressed due to a He film coating the surfaces. These results indicate that it should be possible to use muonium to probe the surfaces of uncapped nanoparticles supported in silica