Universal charts for optical difference frequency generation in the terahertz domain

We present a universal and rigorous approach to study difference frequency generation in the terahertz domain, keeping the number of degrees of freedom to a minimum, through the definition of a suitable figure of merit. The proposed method relies on suitably normalized charts, that enable to predict the optical-to-terahertz conversion efficiency of any system based on wave propagation in quadratic nonlinear materials. The predictions of our approach are found to be in good agreement with the best experimental results reported to date, enabling also to estimate the d22 nonlinear coefficient of high quality GaSe.Comment: 3 pages in 2 columns format, 3 figures. GaSe analysis has been corrected. Fig. 3 has been replace

The role of nonlinear optical absorption in narrow-band difference frequency terahertz-wave generation

We present a general analysis of the influence of nonlinear optical absorption on terahertz generation via optical difference frequency generation, when reaching for the quantum conversion efficiency limit. By casting the equations governing the process in a suitably normalized form, including either two-photon- or three-photon-absorption terms, we have been able to plot universal charts for phase matched optical-to-terahertz conversion for different values of the nonlinear absorption coefficients. We apply our analysis to some experiments reported to date, in order to understand to what extent multiphoton absorption could have played a role and also to predict the maximum achievable conversion efficiency at higher peak pump intensities.Comment: 16 pages, 2 figures. Some correction and some explanation adde

Exploiting the optical quadratic nonlinearity of zincblende semiconductors for guided-wave terahertz generation: a material comparison

We present a detailed analysis and comparison of dielectric waveguides made of CdTe, GaP, GaAs and InP for modal phase matched optical difference frequency generation (DFG) in the terahertz domain. From the form of the DFG equations, we derived the definition of a very general figure of merit (FOM). In turn, this FOM enabled us to compare different configurations, by taking into account linear and nonlinear susceptibility dispersion, terahertz absorption, and a rigorous evaluation of the waveguide modes properties. The most efficient waveguides found with this procedure are predicted to approach the quantum efficiency limit with input optical power in the order of kWs.Comment: 8 pages in two columns format, 6 figures, 2 Table

High-aspect-ratio dielectric pillar with nanocavity backed by metal substrate in the infrared range

We investigated absorption and field enhancements of shallow nanocavities on top of high-aspect-ratio dielectric pillars in the infrared range. The structure includes a high-aspect-ratio nanopillar array of high refractive index, with nano-cavities on top of the pillars, and a metal plane at the bottom. The enhancement factor of electric field intensity reaches 3180 in the nanocavities and peak absorption reaches 99% . We also investigated the finite-size effect of the presented structure to simulate real experiments. Due to its narrow absorption bandwidth 3.5 nm, it can work as a refractive index sensor with sensitivity 297.5 nm/RIU and figure of merit 85. This paves the way to directly control light field at the nanoscales in the infrared light range. The investigated nanostructure will find applications in multifunctional photonics devices such as chips for culturing cells, refractive index sensors, biosensors of single molecule detection and nonlinear sensors

Second order nonlinear optics in AlGaAs metasurfaces

Recently, nonlinear optics at the nanoscale level has emerged as a promising branch of nanophotonics. In this work, we focus our attention on Aluminum Gallium Arsenide (AlGaAs) nanoantennas and metasurfaces for efficient and controlled second harmonic photon emission. After a brief introduction concerning the main studies in this field, we present the latest results achieved in AlGaAs platforms both in the lossless and absorption regimes

Employing Microwave Graphene Field Effect Transistors for Infrared Radiation Detection

In this work, we investigate the possibility of employing graphene field effect transistors, specifically designed for microwave applications, as infrared detectors for telecom applications. Our devices have been fabricated on a sapphire substrate employing CVDgrown transferred graphene. The roles of both the gate dielectric and the DC bias conditions have been evaluated in order to maximize the infrared generated signal through an experimental investigation of the signal-to-noise ratio dependence on the transistor operating point

Giant photoinduced reflectivity modulation of nonlocal resonances in silicon metasurfaces

Metasurfaces offer a unique playground to tailor the electromagnetic field at subwavelength scale to control polarization, wavefront, and nonlinear processes. Tunability of the optical response of these structures is challenging due to the nanoscale size of their constitutive elements. A long-sought solution to achieve tunability at the nanoscale is all-optical modulation by exploiting the ultrafast nonlinear response of materials. However, the nonlinear response of materials is inherently very weak, and, therefore, requires optical excitations with large values of fluence. We show that by properly tuning the equilibrium optical response of a nonlocal metasurface, it is possible to achieve sizable variation of the photoinduced out-of-equilibrium optical response on the picosecond timescale employing fluences smaller than 250 μJ / cm2, which is 1 order of magnitude lower than previous studies with comparable reflectivity variations in silicon platforms. Our results pave the way to fast devices with large modulation amplitude.<br/

Scalable and effective multi-level entangled photon states: a promising tool to boost quantum technologies

Multi-level (qudit) entangled photon states are a key resource for both fundamental physics and advanced applied science, as they can significantly boost the capabilities of novel technologies such as quantum communications, cryptography, sensing, metrology, and computing. The benefits of using photons for advanced applications draw on their unique properties: photons can propagate over long distances while preserving state coherence, and they possess multiple degrees of freedom (such as time and frequency) that allow scalable access to higher dimensional state encoding, all while maintaining low platform footprint and complexity. In the context of out-of-lab use, photon generation and processing through integrated devices and off-the-shelf components are in high demand. Similarly, multi-level entanglement detection must be experimentally practical, i.e., ideally requiring feasible single-qudit projections and high noise tolerance. Here, we focus on multi-level optical Bell and cluster states as a critical resource for quantum technologies, as well as on universal witness operators for their feasible detection and entanglement characterization. Time- and frequency-entangled states are the main platform considered in this context. We review a promising approach for the scalable, cost-effective generation and processing of these states by using integrated quantum frequency combs and fiber-based devices, respectively. We finally report an experimentally practical entanglement identification and characterization technique based on witness operators that is valid for any complex photon state and provides a good compromise between experimental feasibility and noise robustness. The results reported here can pave the way toward boosting the implementation of quantum technologies in integrated and widely accessible photonic platform

On-chip generation of high-dimensional entangled quantum states and their coherent control

Optical quantum states based on entangled photons are essential for solving questions in fundamental physics and are at the heart of quantum information science1. Specifically, the realization of high-dimensional states (D-level quantum systems, that is, qudits, with D > 2) and their control are necessary for fundamental investigations of quantum mechanics2, for increasing the sensitivity of quantum imaging schemes3, for improving the robustness and key rate of quantum communication protocols4, for enabling a richer variety of quantum simulations5, and for achieving more efficient and error-tolerant quantum computation6. Integrated photonics has recently become a leading platform for the compact, cost-efficient, and stable generation and processing of non-classical optical states7. However, so far, integrated entangled quantum sources have been limited to qubits (D = 2)8, 9, 10, 11. Here we demonstrate on-chip generation of entangled qudit states, where the photons are created in a coherent superposition of multiple high-purity frequency modes. In particular, we confirm the realization of a quantum system with at least one hundred dimensions, formed by two entangled qudits with D = 10. Furthermore, using state-of-the-art, yet off-the-shelf telecommunications components, we introduce a coherent manipulation platform with which to control frequency-entangled states, capable of performing deterministic high-dimensional gate operations. We validate this platform by measuring Bell inequality violations and performing quantum state tomography. Our work enables the generation and processing of high-dimensional quantum states in a single spatial mode