Theory of coherent acoustic phonons in InGaN/GaN multi-quantum wells

A microscopic theory for the generation and propagation of coherent LA phonons in pseudomorphically strained wurzite (0001) InGaN/GaN multi-quantum well (MQW) p-i-n diodes is presented. The generation of coherent LA phonons is driven by photoexcitation of electron-hole pairs by an ultrafast Gaussian pump laser and is treated theoretically using the density matrix formalism. We use realistic wurzite bandstructures taking valence-band mixing and strain-induced piezo- electric fields into account. In addition, the many-body Coulomb ineraction is treated in the screened time-dependent Hartree-Fock approximation. We find that under typical experimental conditions, our microscopic theory can be simplified and mapped onto a loaded string problem which can be easily solved.Comment: 20 pages, 17 figure

Implementation of a Deutsch-like quantum algorithm utilizing entanglement at the two-qubit level, on an NMR quantum information processor

We describe the experimental implementation of a recently proposed quantum algorithm involving quantum entanglement at the level of two qubits using NMR. The algorithm solves a generalisation of the Deutsch problem and distinguishes between even and odd functions using fewer function calls than is possible classically. The manipulation of entangled states of the two qubits is essential here, unlike the Deutsch-Jozsa algorithm and the Grover's search algorithm for two bits.Comment: 4 pages, two eps figure

Grover search with pairs of trapped ions

The desired interference required for quantum computing may be modified by the wave function oscillations for the implementation of quantum algorithms[Phys.Rev.Lett.84(2000)1615]. To diminish such detrimental effect, we propose a scheme with trapped ion-pairs being qubits and apply the scheme to the Grover search. It can be found that our scheme can not only carry out a full Grover search, but also meet the requirement for the scalable hot-ion quantum computing. Moreover, the ion-pair qubits in our scheme are more robust against the decoherence and the dissipation caused by the environment than single-particle qubits proposed before.Comment: RevTe

Spin-orbit coupling and crystal-field splitting in the electronic and optical properties of nitride quantum dots with a wurtzite crystal structure

We present an $sp^3$ tight-binding model for the calculation of the electronic and optical properties of wurtzite semiconductor quantum dots (QDs). The tight-binding model takes into account strain, piezoelectricity, spin-orbit coupling and crystal-field splitting. Excitonic absorption spectra are calculated using the configuration interaction scheme. We study the electronic and optical properties of InN/GaN QDs and their dependence on structural properties, crystal-field splitting, and spin-orbit coupling.Comment: 9 pages, 6 figure

Toward scalable quantum computation with cavity QED systems

We propose a scheme for quantum computing using high-Q cavities in which the qubits are represented by single cavity modes restricted in the space spanned by the two lowest Fock states. We show that single qubit operations and universal multiple qubit gates can be implemented using atoms sequentially crossing the cavities.Comment: 14 pages, 8 figure

Maximizing the entanglement of two mixed qubits

Two-qubit states occupy a large and relatively unexplored Hilbert space. Such states can be succinctly characterized by their degree of entanglement and purity. In this letter we investigate entangled mixed states and present a class of states that have the maximum amount of entanglement for a given linear entropy.Comment: 4 pages, 3 figure

A convenient band-gap interpolation technique and an improved band line-up model for InGaAlAs on InP

The band-gap energy and the band line-up of InGaAlAs quaternary compound material on InP are essential information for the theoretical study of physical properties and the design of optoelectronics devices operating in the long-wavelength communication window. The band-gap interpolation of In1-x-y Ga (x) Al (y) As on InP is known to be a challenging task due to the observed discrepancy of experimental results arising from the bowing effect. Besides, the band line-up results of In1-x-y Ga (x) Al (y) As on InP based on previously reported models have limited success by far. In this work, we propose an interpolation solution using the single-variable surface bowing estimation interpolation method for the fitting of experimentally measured In1-x-y Ga (x) Al (y) As band-gap data with various degree of bowing using the same set of input parameters. The suggested solution provides an easier and more physically interpretable way to determine not only lattice matched, but also strained band-gap energy of In1-x-y Ga (x) Al (y) As on InP based on the experimental results. Interpolated results from this convenient method show a more favourable match to multiple independent experiment data sets measured under different temperature conditions as compared to those obtained from the commonly used weighted-sum approach. On top of that, extended framework of the model-solid theory for the band line-up of In1-x-y Ga (x) Al (y) As/InP heterostructure is proposed. Our model-solid theory band line-up result using the proposed extended framework has shown an improved accuracy over those without the extension. In contrast to some previously reported works, it is worth noting that the band line-up result based on our proposed extended model-solid theory has also shown to be more accurate than those given by Harrison's mode