The impact of random doping effects on CMOS SRAM cell

The SRAM has a very constrained cell area and is consequently sensitive to the intrinsic parameter fluctuations ubiquitous in decananometer scale MOSFETs. Using a statistical circuit simulation methodology, which can fully collate intrinsic parameter fluctuation information into compact model sets, the impact of random device doping on 6-T SRAM static noise margins, and read and write characteristics are investigated in detail for well-scaled 35 nm physical gate length devices. We conclude that intrinsic parameter fluctuations will become a major limitation to further conventional MOSFET SRAM scaling

Intrinsic Spin Hall Effect in the Two Dimensional Hole Gas

We show that two types of spin-orbit coupling in the 2 dimensional hole gas (2DHG), with and without inversion symmetry breaking, contribute to the intrinsic spin Hall effect\cite{murakami2003,sinova2003}. Furthermore, the vertex correction due to impurity scattering vanishes in both cases, in sharp contrast to the case of usual Rashba coupling in the electron band. Recently, the spin Hall effect in a hole doped $GaAs$ semiconductor has been observed experimentally by Wunderlich \emph{et al}\cite{wunderlich2004}. From the fact that the life time broadening is smaller than the spin splitting, and the fact impurity vertex corrections vanish in this system, we argue that the observed spin Hall effect should be in the intrinsic regime.Comment: Minor typos fixed, one reference adde

Two-body hadronic charmed meson decays

We study in this work the two-body hadronic charmed meson decays, including both the PP and VP modes. The latest experimental data are first analyzed in the diagrammatic approach. The magnitudes and strong phases of the flavor amplitudes are extracted from the Cabibbo-favored (CF) decay modes using $\chi^2$ minimization. The best-fitted values are then used to predict the branching fractions of the singly-Cabibbo-suppressed (SCS) and doubly-Cabibbo-suppressed decay modes in the flavor SU(3) symmetry limit. We observe significant SU(3) breaking effects in some of SCS channels. In the case of VP modes, we point out that the $A_P$ and $A_V$ amplitudes cannot be completely determined based on currently available data. We conjecture that the quoted experimental results for both $D_s^+\to\bar K^0K^{*+}$ and $D_s^+\to \rho^+\eta'$ are overestimated. We compare the sizes of color-allowed and color-suppressed tree amplitudes extracted from the diagrammatical approach with the effective parameters $a_1$ and $a_2$ defined in the factorization approach. The ratio $|a_2/a_1|$ is more or less universal among the $D \to {\bar K} \pi$, ${\bar K}^* \pi$ and ${\bar K} \rho$ modes. This feature allows us to discriminate between different solutions of topological amplitudes. For the long-standing puzzle about the ratio $\Gamma(D^0\to K^+K^-)/\Gamma(D^0\to\pi^+\pi^-)$, we argue that, in addition to the SU(3) breaking effect in the spectator amplitudes, the long-distance resonant contribution through the nearby resonance $f_0(1710)$ can naturally explain why $D^0$ decays more copiously to $K^+ K^-$ than $\pi^+ \pi^-$ through the $W$-exchange topology.Comment: 32 pages, 5 figures. An alternative method for error bar extraction is used; last columns of Tables~I to VI, and all entries in Tables~VII, VIII and X are modified. To appear in PRD

Matter-wave localization in a random potential

By numerical and variational solution of the Gross-Pitaevskii equation, we studied the localization of a noninteracting and weakly-interacting Bose-Einstein condensate (BEC) in a disordered cold atom lattice and a speckle potential. In the case of a single BEC fragment, the variational analysis produced good results. For a weakly disordered potential, the localized BECs are found to have an exponential tail as in weak Anderson localization. We also investigated the expansion of a noninteracting BEC in these potential. We find that the BEC will be locked in an appropriate localized state after an initial expansion and will execute breathing oscillation around a mean shape when a BEC at equilibrium in a harmonic trap is suddenly released into a disorder potential

UTB SOI SRAM cell stability under the influence of intrinsic parameter fluctuation

Intrinsic parameter fluctuations steadily increases with CMOS technology scaling. Around the 90nm technology node, such fluctuations will eliminate much of the available noise margin in SRAM based on conventional MOSFETs. Ultra thin body (UTB) SOI MOSFETs are expected to replace conventional MOSFETs for integrated memory applications due to superior electrostatic integrity and better resistant to some of the sources of intrinsic parameter fluctuations. To fully realise the performance benefits of UTB SOI based SRAM cells a statistical circuit simulation methodology which can fully capture intrinsic parameter fluctuation information into the compact model is developed. The impact on 6T SRAM static noise margin characteristics of discrete random dopants in the source/drain regions and body-thickness variations has been investigated for well scaled devices with physical channel length in the range of 10nm to 5nm. A comparison with the behaviour of a 6T SRAM based on a conventional 35nm MOSFET is also presented

Impact of random dopant induced fluctuations on sub-15nm UTB SOI 6T SRAM cells

The CMOS scaling increases the impact of intrinsic parameter fluctuation on the yield and functionality of SRAM. A statistical circuit simulation framework which can fully capture intrinsic parameter fluctuation information into the compact model has been developed. The impact of discrete random dopants in the source and drain regions on 6T SRAM cells has been investigated for well scaled ultra thin body (UTB) SOI MOSFETs with physical channel length in the range of 10nm to 5nm

Influence of chirping the Raman lasers in an atom gravimeter: phase shifts due to the Raman light shift and to the finite speed of light

We present here an analysis of the influence of the frequency dependence of the Raman laser light shifts on the phase of a Raman-type atom gravimeter. Frequency chirps are applied to the Raman lasers in order to compensate gravity and ensure the resonance of the Raman pulses during the interferometer. We show that the change in the Raman light shift when this chirp is applied only to one of the two Raman lasers is enough to bias the gravity measurement by a fraction of $\mu$Gal ($1~\mu$Gal~=~$10^{-8}$~m/s$^2$). We also show that this effect is not compensated when averaging over the two directions of the Raman wavevector $k$. This thus constitutes a limit to the rejection efficiency of the $k$-reversal technique. Our analysis allows us to separate this effect from the effect of the finite speed of light, which we find in perfect agreement with expected values. This study highlights the benefit of chirping symmetrically the two Raman lasers