Who are the Devils Wearing Prada in New York City?

Fashion is a perpetual topic in human social life, and the mass has the penchant to emulate what large city residents and celebrities wear. Undeniably, New York City is such a bellwether large city with all kinds of fashion leadership. Consequently, to study what the fashion trends are during this year, it is very helpful to learn the fashion trends of New York City. Discovering fashion trends in New York City could boost many applications such as clothing recommendation and advertising. Does the fashion trend in the New York Fashion Show actually influence the clothing styles on the public? To answer this question, we design a novel system that consists of three major components: (1) constructing a large dataset from the New York Fashion Shows and New York street chic in order to understand the likely clothing fashion trends in New York, (2) utilizing a learning-based approach to discover fashion attributes as the representative characteristics of fashion trends, and (3) comparing the analysis results from the New York Fashion Shows and street-chic images to verify whether the fashion shows have actual influence on the people in New York City. Through the preliminary experiments over a large clothing dataset, we demonstrate the effectiveness of our proposed system, and obtain useful insights on fashion trends and fashion influence

How Much Does Money Matter in a Direct Democracy?

The fine-structure splitting of quantum confined InxGa1-x Nexcitons is investigated using polarization-sensitive photoluminescence spectroscopy. The majority of the studied emission lines exhibits mutually orthogonal fine-structure components split by 100-340 mu eV, as measured from the cleaved edge of the sample. The exciton and the biexciton reveal identical magnitudes but reversed sign of the energy splitting.Original Publication:Supaluck Amloy, Y T Chen, K F Karlsson, K H Chen, H C Hsu, C L Hsiao, L C Chen and Per-Olof Holtz, Polarization-resolved fine-structure splitting of zero-dimensional InxGa1-xN excitons, 2011, PHYSICAL REVIEW B, (83), 20, 201307.http://dx.doi.org/10.1103/PhysRevB.83.201307Copyright: American Physical Societyhttp://www.aps.org

Structural panels

Vinyl pyridines including vinyl stilbazole materials and vinyl styrylpyridine oligomer materials are disclosed. These vinylpyridines form copolymers with bismaleimides which copolymers have good fire retardancy and decreased brittleness. The cure temperatures of the copolymers are substantially below the cure temperatures of the bismaleimides alone. Reinforced composites made from the cured copolymers are disclosed as well

Vinyl stilbazoles

Vinyl pyridines including vinyl stilbazole materials and vinyl styrylpyridine oligomer materials are disclosed. These vinylpyridines form copolymers with bismaleimides which copolymers have good fire retardancy and decreased brittleness. The cure temperatures of the copolymers are substantially below the cure temperatures of the bismaleimides alone. Reinforced composites made from the cured copolymers are disclosed as well

A Novel VLSI Technology to Manufacture High-Density Thermoelectric Cooling Devices

This paper describes a novel integrated circuit technology to manufacture high-density thermoelectric devices on a semiconductor wafer. With no moving parts, a thermoelectric cooler operates quietly, allows cooling below ambient temperature, and may be used for temperature control or heating if the direction of current flow is reversed. By using a monolithic process to increase the number of thermoelectric couples, the proposed solid-state cooling technology can be combined with traditional air cooling, liquid cooling, and phase-change cooling to yield greater heat flux and provide better cooling capability.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Recrystallization of epitaxial GaN under indentation

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.Comment: 10 pages, 3 figures