Pressure deformation of tires using differential stiffness for triangular solid-of-revolution elements

The derivation is presented of the differential stiffness for triangular solid of revolution elements. The derivation takes into account the element rigid body rotation only, the rotation being about the circumferential axis. Internal pressurization of a pneumatic tire is used to illustrate the application of this feature

Tensioning of a belt around a drum using membrane element

An application of the membrane element to the problem of the tensioning of a conveyer belt which wraps around a drum is presented. Two cases were investigated: (1) belt tension increase due to drum edge wear; and (2) material trapped between the drum and the belt. In both cases it was found that the increase in belt tension was due to the additional stretching of the belt resulting from the drum radius change rather than from the transverse deflection of the belt

Shifted one-parameter supersymmetric family of quartic asymmetric double-well potentials

Extending our previous work (Rosu, Mancas, Chen, Ann.Phys. 343 (2014) 87-102), we define supersymmetric partner potentials through a particular Riccati solution of the form F(x)=(x-c)^2-1, where c is a real shift parameter, and work out the quartic double-well family of one-parameter isospectral potentials obtained by using the corresponding general Riccati solution. For these parametric double well potentials, we study how the localization properties of the two wells depend on the parameter of the potentials for various values of the shifting parameter. We also consider the supersymmetric parametric family of the first double-well potential in the Razavy chain of double well potentials corresponding to F(x)=(1/2)sinh 2x-2(1+sqrt 2)sinh 2x/[(1+sqrt 2) cosh 2x+1], both unshifted and shifted, to test and compare the localization propertiesComment: 11 pages, 4 figures, published versio

Recrystallization of epitaxial GaN under indentation

We report recrystallization of epitaxial (epi-) GaN(0001) film under indentation.Hardness value is measured close to 10 GPa, using a Berkovich indenter. Pop-in burst in the loading line indicates nucleation of dislocations setting in plastic motion of lattice atoms under stress field for the recrystallization process. Micro-Raman studies are used to identify the recrystallization process. Raman area mapping indicates the crystallized region. Phonon mode corresponding to E2(high) close to 570 cm-1 in the as-grown epi-GaN is redshifted to stress free value close to 567 cm-1 in the indented region. Evolution of A1(TO) and E1(TO) phonon modes are also reported to signify the recrystallization process.Comment: 10 pages, 3 figures