128 research outputs found
Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
Three-dimensional (3D) topological insulators (TI) are novel quantum
materials with insulating bulk and topologically protected metallic surfaces
with Dirac-like band structure. The spin-helical Dirac surface states are
expected to host exotic topological quantum effects and find applications in
spintronics and quantum computation. The experimental realization of these
ideas requires fabrication of versatile devices based on bulk-insulating TIs
with tunable surface states. The main challenge facing the current TI materials
exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which
remains unsolved despite extensive efforts involving nanostructuring, chemical
doping and electrical gating. Here we report a novel approach for engineering
the band structure of TIs by molecular beam epitaxy (MBE) growth of
(Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy
(ARPES) and transport measurements show that the topological surface states
exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1),
indicating the robustness of bulk Z2 topology. Most remarkably, the systematic
band engineering leads to ideal TIs with truly insulating bulk and tunable
surface state across the Dirac point that behave like one quarter of graphene.
This work demonstrates a new route to achieving intrinsic quantum transport of
the topological surface states and designing conceptually new TI devices with
well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information
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Gate-tuned normal and superconducting transport at the surface of a topological insulator
Three-dimensional topological insulators are characterized by the presence of
a bandgap in their bulk and gapless Dirac fermions at their surfaces. New
physical phenomena originating from the presence of the Dirac fermions are
predicted to occur, and to be experimentally accessible via transport
measurements in suitably designed electronic devices. Here we study transport
through superconducting junctions fabricated on thin Bi2Se3 single crystals,
equipped with a gate electrode. In the presence of perpendicular magnetic field
B, sweeping the gate voltage enables us to observe the filling of the Dirac
fermion Landau levels, whose character evolves continuously from electron- to
hole-like. When B=0, a supercurrent appears, whose magnitude can be gate tuned,
and is minimum at the charge neutrality point determined from the Landau level
filling. Our results demonstrate how gated nano-electronic devices give control
over normal and superconducting transport of Dirac fermions at an individual
surface of a three-dimensional topological insulator.Comment: 28 pages, 5 figure
Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
The universal conductance fluctuations (UCFs), one of the most important
manifestations of mesoscopic electronic interference, have not yet been
demonstrated for the two-dimensional surface state of topological insulators
(TIs). Even if one delicately suppresses the bulk conductance by improving the
quality of TI crystals, the fluctuation of the bulk conductance still keeps
competitive and difficult to be separated from the desired UCFs of surface
carriers. Here we report on the experimental evidence of the UCFs of the
two-dimensional surface state in the bulk insulating Bi2Te2Se nanoribbons. The
solely-B\perp-dependent UCF is achieved and its temperature dependence is
investigated. The surface transport is further revealed by weak
antilocalizations. Such survived UCFs of the topological surface states result
from the limited dephasing length of the bulk carriers in ternary crystals. The
electron-phonon interaction is addressed as a secondary source of the surface
state dephasing based on the temperature-dependent scaling behavior
Broken symmetry states and divergent resistance in suspended bilayer graphene
Graphene [1] and its bilayer have generated tremendous excitement in the
physics community due to their unique electronic properties [2]. The intrinsic
physics of these materials, however, is partially masked by disorder, which can
arise from various sources such as ripples [3] or charged impurities [4].
Recent improvements in quality have been achieved by suspending graphene flakes
[5,6], yielding samples with very high mobilities and little charge
inhomogeneity. Here we report the fabrication of suspended bilayer graphene
devices with very little disorder. We observe fully developed quantized Hall
states at magnetic fields of 0.2 T, as well as broken symmetry states at
intermediate filling factors , , and . The
devices exhibit extremely high resistance in the state that grows
with magnetic field and scales as magnetic field divided by temperature. This
resistance is predominantly affected by the perpendicular component of the
applied field, indicating that the broken symmetry states arise from many-body
interactions.Comment: 23 pages, including 4 figures and supplementary information; accepted
to Nature Physic
Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons
A topological insulator is a new state of matter, possessing gapless
spin-locking surface states across the bulk band gap which has created new
opportunities from novel electronics to energy conversion. However, the large
concentration of bulk residual carriers has been a major challenge for
revealing the property of the topological surface state via electron transport
measurement. Here we report surface state dominated transport in Sb-doped
Bi2Se3 nanoribbons with very low bulk electron concentrations. In the
nanoribbons with sub-10nm thickness protected by a ZnO layer, we demonstrate
complete control of their top and bottom surfaces near the Dirac point,
achieving the lowest carrier concentration of 2x10^11/cm2 reported in
three-dimensional (3D) topological insulators. The Sb-doped Bi2Se3
nanostructures provide an attractive materials platform to study fundamental
physics in topological insulators, as well as future applications.Comment: 5 pages, 4 figures, 1 tabl
Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
Topological insulators represent a new state of quantum matter attractive to
both fundamental physics and technological applications such as spintronics and
quantum information processing. In a topological insulator, the bulk energy gap
is traversed by spin-momentum locked surface states forming an odd number of
surface bands that possesses unique electronic properties. However, transport
measurements have often been dominated by residual bulk carriers from crystal
defects or environmental doping which mask the topological surface
contribution. Here we demonstrate (BixSb1-x)2Te3 as a tunable topological
insulator system to manipulate bulk conductivity by varying the Bi/Sb
composition ratio. (BixSb1-x)2Te3 ternary compounds are confirmed as
topological insulators for the entire composition range by angle resolved
photoemission spectroscopy (ARPES) measurements and ab initio calculations.
Additionally, we observe a clear ambipolar gating effect similar to that
observed in graphene using nanoplates of (BixSb1-x)2Te3 in
field-effect-transistor (FET) devices. The manipulation of carrier type and
concentration in topological insulator nanostructures demonstrated in this
study paves the way for implementation of topological insulators in
nanoelectronics and spintronics.Comment: 7 pages, 4 figure
Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
Pulsed magnetic fields of up to 55T are used to investigate the transport
properties of the topological insulator Bi_2Se_3 in the extreme quantum limit.
For samples with a bulk carrier density of n = 2.9\times10^16cm^-3, the lowest
Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For
fields well beyond this limit, Shubnikov-de Haas oscillations arising from
quantization of the 2D surface state are observed, with the \nu =1 Landau level
attained by a field of 35T. These measurements reveal the presence of
additional oscillations which occur at fields corresponding to simple rational
fractions of the integer Landau indices.Comment: 5 pages, 4 figure
Spin and valley quantum Hall ferromagnetism in graphene
In a graphene Landau level (LL), strong Coulomb interactions and the fourfold
spin/valley degeneracy lead to an approximate SU(4) isospin symmetry. At
partial filling, exchange interactions can spontaneously break this symmetry,
manifesting as additional integer quantum Hall plateaus outside the normal
sequence. Here we report the observation of a large number of these quantum
Hall isospin ferromagnetic (QHIFM) states, which we classify according to their
real spin structure using temperature-dependent tilted field magnetotransport.
The large measured activation gaps confirm the Coulomb origin of the broken
symmetry states, but the order is strongly dependent on LL index. In the high
energy LLs, the Zeeman effect is the dominant aligning field, leading to real
spin ferromagnets with Skyrmionic excitations at half filling, whereas in the
`relativistic' zero energy LL, lattice scale anisotropies drive the system to a
spin unpolarized state, likely a charge- or spin-density wave.Comment: Supplementary information available at http://pico.phys.columbia.ed
Magnetic Catalysis and Quantum Hall Ferromagnetism in Weakly Coupled Graphene
We study the realization in a model of graphene of the phenomenon whereby the
tendency of gauge-field mediated interactions to break chiral symmetry
spontaneously is greatly enhanced in an external magnetic field. We prove that,
in the weak coupling limit, and where the electron-electron interaction
satisfies certain mild conditions, the ground state of charge neutral graphene
in an external magnetic field is a quantum Hall ferromagnet which spontaneously
breaks the emergent U(4) symmetry to U(2)XU(2).
We argue that, due to a residual CP symmetry, the quantum Hall ferromagnet
order parameter is given exactly by the leading order in perturbation theory.
On the other hand, the chiral condensate which is the order parameter for
chiral symmetry breaking generically obtains contributions at all orders. We
compute the leading correction to the chiral condensate. We argue that the
ensuing fermion spectrum resembles that of massive fermions with a vanishing
U(4)-valued chemical potential. We discuss the realization of parity and charge
conjugation symmetries and argue that, in the context of our model, the charge
neutral quantum Hall state in graphene is a bulk insulator, with vanishing
longitudinal conductivity due to a charge gap and Hall conductivity vanishing
due to a residual discrete particle-hole symmetry.Comment: 35 page
Observation of the Fractional Quantum Hall Effect in Graphene
When electrons are confined in two dimensions and subjected to strong
magnetic fields, the Coulomb interactions between them become dominant and can
lead to novel states of matter such as fractional quantum Hall liquids. In
these liquids electrons linked to magnetic flux quanta form complex composite
quasipartices, which are manifested in the quantization of the Hall
conductivity as rational fractions of the conductance quantum. The recent
experimental discovery of an anomalous integer quantum Hall effect in graphene
has opened up a new avenue in the study of correlated 2D electronic systems, in
which the interacting electron wavefunctions are those of massless chiral
fermions. However, due to the prevailing disorder, graphene has thus far
exhibited only weak signatures of correlated electron phenomena, despite
concerted experimental efforts and intense theoretical interest. Here, we
report the observation of the fractional quantum Hall effect in ultraclean
suspended graphene, supporting the existence of strongly correlated electron
states in the presence of a magnetic field. In addition, at low carrier density
graphene becomes an insulator with an energy gap tunable by magnetic field.
These newly discovered quantum states offer the opportunity to study a new
state of matter of strongly correlated Dirac fermions in the presence of large
magnetic fields
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