Educational Operations Four Days a Week

Four day work weeks have been employed by industry, state agencies, and recently by higher education. The generally perceived benefit of the four day work week is reduced energy costs. These costs savings include more efficient building operations and less energy consumption driving to a facility. The generally perceived negative impact of four day operations, particularly of state agencies, is a decreased level of service. How much energy would be saved and could the level of service be maintained in a higher educational environment by switching from five to four day weeks? This study occurs at a regional university within an Industrial and Engineering Technology department that has exclusive use of a building. The department contains seven degree programs ranging from TAC-ABET programs to non-accredited technical degree programs. During the study period all classes and laboratories were scheduled Monday through Thursday. Staff only worked Monday through Thursday. Faculty but not students could gain access to the building on Fridays. The objective of this paper is to study the costs, benefits, and educational impacts of changing the five day academic and building availability week to four days a week. The paper will present the costs savings and the results of a survey of stakeholders collected during one academic quarter. The results of the energy costs are presented in tabular form and the results of the survey are presented in graphical form. The data and conclusions are expected to help decision makers make informed decisions when contemplating an alternative work schedule for higher education

Cockpit Ocular Recording System (CORS)

The overall goal was the development of a Cockpit Ocular Recording System (CORS). Four tasks were used: (1) the development of the system; (2) the experimentation and improvement of the system; (3) demonstrations of the working system; and (4) system documentation. Overall, the prototype represents a workable and flexibly designed CORS system. For the most part, the hardware use for the prototype system is off-the-shelf. All of the following software was developed specifically: (1) setup software that the user specifies the cockpit configuration and identifies possible areas in which the pilot will look; (2) sensing software which integrates the 60 Hz data from the oculometer and heat orientation sensing unit; (3) processing software which applies a spatiotemporal filter to the lookpoint data to determine fixation/dwell positions; (4) data recording output routines; and (5) playback software which allows the user to retrieve and analyze the data. Several experiments were performed to verify the system accuracy and quantify system deficiencies. These tests resulted in recommendations for any future system that might be constructed

Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition.

We report on the use of InGaAsP strain-compensated superlattices (SC-SLs) as a technique to reduce the defect density of Indium Phosphide (InP) grown on silicon (InP-on-Si) by Metal Organic Chemical Vapor Deposition (MOCVD). Initially, a 2 μm thick gallium arsenide (GaAs) layer was grown with very high uniformity on exact oriented (001) 300 mm Si wafers; which had been patterned in 90 nm V-grooved trenches separated by silicon dioxide (SiO₂) stripes and oriented along the [110] direction. Undercut at the Si/SiO₂ interface was used to reduce the propagation of defects into the III-V layers. Following wafer dicing; 2.6 μm of indium phosphide (InP) was grown on such GaAs-on-Si templates. InGaAsP SC-SLs and thermal annealing were used to achieve a high-quality and smooth InP pseudo-substrate with a reduced defect density. Both the GaAs-on-Si and the subsequently grown InP layers were characterized using a variety of techniques including X-ray diffraction (XRD); atomic force microscopy (AFM); transmission electron microscopy (TEM); and electron channeling contrast imaging (ECCI); which indicate high-quality of the epitaxial films. The threading dislocation density and RMS surface roughness of the final InP layer were 5 × 10⁸/cm² and 1.2 nm; respectively and 7.8 × 10⁷/cm² and 10.8 nm for the GaAs-on-Si layer

Dedication

This issue of the Nebraska Law Review is dedicated to the Honorable Earl Warren, Chief Justice of the United States, upon his retirement

Contributors to the December Issue/Notes

Notes by Robert A. Oberfell, charles M. Boynton, Theodore M. Ryan, William J. O\u27Connell, David S. Landis, Francis J. Paulson, Robert A. Oberfell, and Hal E. Hunter, Jr

A study of the effect of lenses and prisms on vertical ductions at 16 inches

A study of the effect of lenses and prisms on vertical ductions at 16 inche