Habitação em Caxias do Sul: uma estratégia de intervenção nas áreas de risco

TCC (graduação) - Universidade Federal de Santa Catarina. Centro Tecnológico. ArquiteturaTCC sem resumo

Aplicação do recall no contexto empresarial- ambiental no direito consumerista brasileiro

O desenvolvimento tecnológico possibilita novas ferramentas de proteção que proporcionam benefícios aos consumidores. Entre elas, está o recall, cuja principal meta é a de oferecer bem-estar aos cidadãos no prisma contratual e consumerista, de acordo com o posicionamento recente dos tribunais brasileiros. Esta monografia tem como objetivo geral analisar a necessidade do instituto do recall no Direito Brasileiro, conforme dispõe a Lei 8.078/1990 e suas implicações na responsabilidade objetiva dos fornecedores, sob o ângulo consumerista ambiental. Apresenta pesquisa qualitativa, realizada por meio do método hipotético-dedutivo e de procedimento técnico bibliográfico e jurisprudencial. Expõe breve histórico do aviso de risco brasileiro, conceituação, princípios constitucionais básicos e seus efeitos na responsabilidade objetiva e pós-contratual dos fornecedores. Em seguida, caracteriza a relação do aviso de risco com a sustentabilidade no meio ambiente e nas empresas por meio do órgão ISE (Índice de Sustentabilidade Empresarial) e sintetiza o teor das Portarias 2001, 2012 e 2019, do Ministério da Justiça, quanto ao aviso de risco no País e respectiva portaria conjunta para recall de veículos automotores. Finalmente, examina a perspectiva ambiental da sustentabilidade, o futuro do desenvolvimento sustentável e os objetivos da Agenda ONU 2030. Nesse sentido, conclui que, após minuciosa análise de jurisprudências brasileiras dos últimos cinco anos, ocorre um vínculo entre direito consumerista e contratual previsto na doutrina, todavia na seara ambiental e empresarial essa relação não está expressamente estabelecida, ao menos em julgados colacionados

estudo de caso Projeto Alvorada

A certificação LEED - Leadership in Energy and Environmental Design - está em expansão em países emergentes, como é o caso do Brasil. Em países desenvolvidos, especialmente na América do Norte, esse sistema internacional de certificação e orientação ambiental já possui notoriedade. Sua aplicabilidade e abrangência é passível de discussão e aprimoramento, principalmente em realidades diferentes daquelas onde deu-se sua formulação. Propõe-se uma reflexão sobre a aplicabilidade desta certificação no Brasil, considerando suas especificidades, em Programa único que é o de Habitação de Interesse Social. Para isso, a análise se dá através de um estudo de caso do Projeto Alvorada, desenvolvido pelo Núcleo Orientado à Inovação da Edificação (NORIE) da Universidade Federal do Rio Grande do Sul, utilizando os procedimentos da certificação. A reflexão desenvolvida se dá muito mais na abrangência da ferramenta de certificação do que do resultado em si, evidenciando a disparidade de realidades consideradas para os parâmetros estipulados pela certificação. Alguns parâmetros avaliados se restringem a realidades de países desenvolvidos e aspectos importantes de outras realidades não recebem relativização no procedimento de certificação

Role of rare earth elements and entropy on the anatase-to-rutile phase transformation of TiO2thin films deposited by ion beam sputtering

The role played by oxygen vacancies and rare earth (RE) elements in the anatase-to-rutile (A−R) phase transformation of titanium dioxide (TiO2) is still a matter of controversy. Here, we report the A−R transformation of TiO2 thin solid films as obtained by ion beam sputtering a RE-decorated titanium target in an oxygen-rich atmosphere. The samples correspond to undoped, single-doped (Sm, Tm, and Tb), and codoped (Sm:Tb, Sm:Tm, and Sm:Tb:Tm) TiO2 films. In the as-prepared form, the films are amorphous and contain ∼0.5 at. % of each RE. The structural modifications of the TiO2 films due to the RE elements and the annealing treatments in an oxygen atmosphere are described according to the experimental results provided by Raman scattering, X-ray photoelectron spectroscopy, and optical measurements. The A−R transformation depends on both the annealing temperature and the characteristics of the undoped, single-doped, and codoped TiO2 films. As reported in the literature, the A−R transformation can be inhibited or enhanced by the presence of impurities and is mostly related to energetic contributions. The experimental results were analyzed, considering the essential and stabilizing role of the entropy of mixing in the A−R transformation due to the introduction of more and multiple quantum states originated in vacancies and impurities in the anatase phase.Fil: Scoca, Diego L.S.. Universidade Estadual de Campinas; BrasilFil: Cemin, Felipe. Universidade Estadual de Campinas; BrasilFil: Aldabe, Sara Alfonsina. Universidad de Buenos Aires; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Oficina de Coordinación Administrativa Ciudad Universitaria. Instituto de Química, Física de los Materiales, Medioambiente y Energía. Universidad de Buenos Aires. Facultad de Ciencias Exactas y Naturales. Instituto de Química, Física de los Materiales, Medioambiente y Energía; ArgentinaFil: Figueroa, Carlos A.. Universidade de Caxias Do Sul.; BrasilFil: Zanatta, Antonio R.. Universidade de Sao Paulo; BrasilFil: Alvarez, Fernando. Universidade Estadual de Campinas; Brasi

Physicochemical, structural, mechanical, and tribological characteristics of Si3N4–MoS2 thin films deposited by reactive magnetron sputtering

AbstractSi3N4 coatings show outstanding performance in wear and corrosion resistance of cutting tools at high temperatures, up to 1000°C and above. In addition, the incorporation of minor concentrations of MoS2 in Si3N4 could reduce the friction coefficient and preserve sufficiently high hardness values. In the present work, Si3N4–MoS2 thin films were deposited on C and Si (001) substrates by RF and DC reactive deposition magnetron sputtering from Si and MoS2 targets in a Ar/N2 plasma, with different low MoS2 amounts. The thin films were characterized by nanoindentation at different temperatures from 23°C to 400°C and sliding friction and nanoscratch tests at a constant temperature of 23°C. Several different analytical techniques were also employed to characterize the thin films. In the whole layer both Si3N4 and MoS2 compounds are stoichiometric and the structure is amorphous and homogenous. Although the hardness is roughly constant in the here investigated MoS2 concentration range at constant temperature, the lowest amount of MoS2 (0.2at.%) increases substantially the hardness of Si3N4–MoS2 thin films at 23°C. The hardness of Si3N4–MoS2 thin films decreases with the increase of temperature. The friction coefficient decreases substantially for MoS2 concentrations between 0.2 and 0.3at.% and the annealing process does not modify such behavior. The 24h annealing performed during hardness measurements, up to 400°C, induced thermally-activated processes in the thin films, which modify the critical load, hardness, and reduced elastic modulus of the thin film when measured at 23°C

PATOLOGIA DO QUADRIL DAS CRIANÇAS: UMA REVISÃO INTEGRATIVA

Many of the pathologies that affect the hip in adults have their origins in childhood, making the early diagnosis of these conditions through specific pediatric orthopedic evaluation extremely important. Research shows that late diagnoses are associated with a considerable increase in the number of sequelae. This article consists of an integrative review, which aims to analyze and discuss the main hip pathologies in children, in order to expand the knowledge of students and professionals in the area about the subject in question. The work consists of an integrative literature review, in which a basic, qualitative, exploratory and bibliographic research was carried out in the databases. Hip pathology in children is a field of medical study and treatment that encompasses a variety of conditions and problems that affect the hip joint in younger individuals. These conditions can range from congenital problems to disorders acquired over time. It is critical to understand that healthy hip development is crucial for children's mobility and quality of life, and any issues in this area must be addressed with care and attention. In summary, hip pathologies in children encompass a variety of conditions, from developmental dysplasia of the hip to proximal epiphysis of the femur. Early diagnosis and adequate treatment are essential to avoid complications and long-term sequelae.Muitas das patologias que afetam o quadril de adultos têm suas origens na infância, tornando o diagnóstico precoce dessas condições por meio de avaliação ortopédica pediátrica específica de extrema importância. Pesquisas demonstram que diagnósticos tardios estão associados a um aumento considerável no número de sequelas. O presente artigo consiste em uma revisão integrativa, no qual tem como objetivo analisar e discutir acerca das principais patologias de quadril das crianças, no intuito de ampliar os conhecimentos de estudantes e profissionais da área acerca do tema em questão. O trabalho consiste em uma revisão de literatura do tipo integrativa, na qual foi realizada uma pesquisa dos tipos básica, qualitativa, exploratória e bibliográfica, nas bases de dados. A patologia do quadril em crianças é um campo de estudo e tratamento médico que abrange uma variedade de condições e problemas que afetam a articulação do quadril em indivíduos mais jovens. Essas condições podem variar desde problemas congênitos até distúrbios adquiridos ao longo do tempo. É fundamental entender que o desenvolvimento saudável do quadril é crucial para a mobilidade e a qualidade de vida das crianças e qualquer problema nessa área deve ser abordado com cuidado e atenção. Em suma, as patologias do quadril em crianças abrangem uma variedade de condições, desde a displasia do desenvolvimento do quadril até a epifisiólise proximal do fêmur. O diagnóstico precoce e o tratamento adequado são fundamentais para evitar complicações e sequelas a longo prazo

Tailoring Structural and Energy-related Properties of Thin Films Using HiPIMS

La pulvérisation cathodique magnétron pulsée à haute puissance (HiPIMS) est un procédé de dépôt de couches minces dans lequel le flux de dépôt est principalement composé d’ions du matériau pulvérisé. Ce type de décharge permet de contrôler l’énergie et la direction des espèces qui seront déposées, ce qui est favorable à la modification de la structure et des propriétés finales des couches. Malgré tous les travaux de recherches menés pour caractériser et comprendre les conditions de décharge HiPIMS, la nécessité de développer des couches minces utiles à la société reste toujours d’actualité. La finalité de ce travail est l’obtention de couches minces HiPIMS plus performantes que celles obtenues aujourd'hui en utilisant des techniques de dépôt classiques. Pour cela il est indispensable d'identifier et d'optimiser les paramètres de dépôt permettant de modifier à la fois la microstructure des couches, la contrainte résiduelle et les propriétés liées à l'énergie telles que la résistivité électrique et la bande interdite. Trois matériaux sont au cœur de ce travail : le cuivre, le dioxyde de titane et le nitrure de titane. Les études expérimentales ont montré que les paramètres les plus importants pour obtenir les propriétés souhaitées étaient la quantité et l’énergie cinétique des espèces ionisées irradiant la couche au cours de sa croissance. Par ailleurs, les paramètres de croissance optimale entre couches métalliques et couches composées diffèrent considérablement.High power impulse magnetron sputtering (HiPIMS) is a thin film deposition technique where the deposition flux is predominantly composed of ionized sputtered material. This enables control of energy and direction of the film-forming species and is thereby beneficial for tailoring the film structure and final properties. Although researchers world-wide have spent significant time and efforts characterizing and understanding the plasma process conditions in HiPIMS, research in new and improved HiPIMS-based thin film materials that find applications in areas of importance for society is still required. The goal of this work has been to identify and optimize the deposition parameters that allow tailoring the film microstructure, intrinsic stress and energy-related properties, such as electrical resistivity and optical band gap, to ultimately achieve superior HiPIMS coatings compared to what is achieved today using conventional deposition techniques. Three material systems constitute the core of the work: copper, titanium dioxide, and titanium nitride. From the work carried out it is concluded that the most important parameters affecting the film structure and properties are the amount as well as the kinetic energy of the ionized sputtered species irradiating the film during growth. These parameters differ substantially for optimum growth conditions of metallic and compound films

Élaboration de couches minces par HiPIMS : propriétés structurales et aspects énergétiques

High power impulse magnetron sputtering (HiPIMS) is a thin film deposition technique where the deposition flux is predominantly composed of ionized sputtered material. This enables control of energy and direction of the film-forming species and is thereby beneficial for tailoring the film structure and final properties. Although researchers world-wide have spent significant time and efforts characterizing and understanding the plasma process conditions in HiPIMS, research in new and improved HiPIMS-based thin film materials that find applications in areas of importance for society is still required. The goal of this work has been to identify and optimize the deposition parameters that allow tailoring the film microstructure, intrinsic stress and energy-related properties, such as electrical resistivity and optical band gap, to ultimately achieve superior HiPIMS coatings compared to what is achieved today using conventional deposition techniques. Three material systems constitute the core of the work: copper, titanium dioxide, and titanium nitride. From the work carried out it is concluded that the most important parameters affecting the film structure and properties are the amount as well as the kinetic energy of the ionized sputtered species irradiating the film during growth. These parameters differ substantially for optimum growth conditions of metallic and compound films.La pulvérisation cathodique magnétron pulsée à haute puissance (HiPIMS) est un procédé de dépôt de couches minces dans lequel le flux de dépôt est principalement composé d’ions du matériau pulvérisé. Ce type de décharge permet de contrôler l’énergie et la direction des espèces qui seront déposées, ce qui est favorable à la modification de la structure et des propriétés finales des couches. Malgré tous les travaux de recherches menés pour caractériser et comprendre les conditions de décharge HiPIMS, la nécessité de développer des couches minces utiles à la société reste toujours d’actualité. La finalité de ce travail est l’obtention de couches minces HiPIMS plus performantes que celles obtenues aujourd'hui en utilisant des techniques de dépôt classiques. Pour cela il est indispensable d'identifier et d'optimiser les paramètres de dépôt permettant de modifier à la fois la microstructure des couches, la contrainte résiduelle et les propriétés liées à l'énergie telles que la résistivité électrique et la bande interdite. Trois matériaux sont au cœur de ce travail : le cuivre, le dioxyde de titane et le nitrure de titane. Les études expérimentales ont montré que les paramètres les plus importants pour obtenir les propriétés souhaitées étaient la quantité et l’énergie cinétique des espèces ionisées irradiant la couche au cours de sa croissance. Par ailleurs, les paramètres de croissance optimale entre couches métalliques et couches composées diffèrent considérablement

Tuning high power impulse magnetron sputtering discharge and substrate bias conditions to reduce the intrinsic stress of TiN thin films

International audienc

Benefits of energetic ion bombardment for tailoring stress and microstructural evolution during growth of Cu thin films

International audienceWe have studied the development of intrinsic stress and microstructure of copper (Cu) films deposited under energetic ion bombardment. Stress evolution during growth of ∼150 nm thick Cu films on Si(001) substrates has been investigated by in situ measurements in a high power impulse magnetron sputtering (HiPIMS) process for different substrate bias voltages (from 0 to −160 V) and benchmarked with conventional direct current magnetron sputtering (DCMS). The microstructure and crystal orientation of the studied films have been examined by various ex situ methods. For HiPIMS, we found that the substrate bias voltage (energy of Cu ions) strongly affects the film continuity during the early growth stages and the compressive stress developed during the post-coalescence stage. Contrarily to common expectations, the stress magnitude can be significantly reduced despite the energy increase of the bombarding particles when using HiPIMS. These results are discussed based on a recent kinetic model taking into account the grain size-dependent defect incorporation due to energetic particle bombardment. Reversible stress relaxations are observed upon growth interrupts, with characteristic time constants of tens of seconds, which suggests that the stress and microstructure development are mainly mediated by surface diffusion processes. In addition, polycrystalline films (111)-textured are obtained for negative bias voltages from 0 to −100 V, while for even higher negative bias voltages (up to −160 V), epitaxial growth of Cu(001) is achieved. For the DCMS samples, there is no significant change in film continuity and crystal orientation when varying the bias voltage