Nanochannel arrays etched into hexagonal boron nitride meso-membranes by a focused ion beam

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Contribution of the Rhône River to organic carbon inputs to the northwestern Mediterranean Sea

cited By 99International audienceParticulate and dissolved organic carbon were determined in coastal waters of the Gulf of Lions, during several cruises from 1986. The input by the Rhône River and its seasonal variability are studied and new data are given concerning the contribution to the Mediterranean Sea. Fluorescence measurements show the limited influence on the open sea of surface particulate matter, but suggest a bottom transport during which diagenetic evolution can occur. The remobilization of dissolved organic matter is also stressed. © 1990

Croissance de cristaux de SiC à partir d'un alliage liquide Al-Si saturé en carbone

Growth of cubic β-SiC crystals from a C-saturated Al-Si melt under atmospheric pressure has been investigated at temperatures ranging from 700 to 1200°C and for silicon contents in the melt varying from 12.5 to 40 at%. Under favourable conditions (1100°C, 30 at%Si), crystals with (111) faces up to 100µm wide have been produced. Thermo-kinetic considerations based on an optimum deviation to the Al4C3-SiC-L monovariant equilibrium in the Al-C-Si ternary system are proposed for modelling the experimental results

Ge Mediated Surface Preparation for Twin Free 3C-SiC Nucleation and Growth on Low Off-Axis 4H-SiC Substrate

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3C-SiC Heteroepitaxial Growth by Vapor-Liquid-Solid Mechanism on Patterned 4H-SiC Substrate Using Si-Ge Melt

International audienceIn this work, we report on the use of patterned 4H-SiC(0001) substrates for the heteroepitaxial growth of 3C-SiC by vapor-liquid-solid (VLS) mechanism using Ge(50)Si(50) melt. Mesas structures of various size and shape were obtained by standard photolithography and dry etching processes. On the temperature range investigated 1300-1450 degrees C, 3C-SiC deposit was obtained on top and outside the mesas. Some lateral enlargement of these mesas was observed, but it was systematically homoepitaxial. The lateral growth rate was found rather low compared to other techniques like chemical vapor deposition, with a maximum value of similar to 12 mu m/h. In addition, elimination of twin boundaries (TBs) inside the 3C-SiC deposit on top of the mesas was observed in the temperature range of 1400-1450 degrees C and for specific mesa shape or orientation of the sidewalls. The best case for eliminating these TBs was found to be with initially circular mesas, which spontaneously form well orientated hexagonal facets and then lead to TB-free deposit on top after VLS growth

Investigation of 3C-SiC growth on Si(111) by vapor-liquid-solid transport using a SiGe liquid phase

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Epitaxial growth of 3C-SiC onto silicon substrate by VLS transport using CVD-grown 3C-SiC seeding layer

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