2,286 research outputs found

    Domain walls in (Ga,Mn)As diluted magnetic semiconductor

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    We report experimental and theoretical studies of magnetic domain walls in an in-plane magnetized (Ga,Mn)As dilute moment ferromagnetic semiconductor. Our high-resolution electron holography technique provides direct images of domain wall magnetization profiles. The experiments are interpreted based on microscopic calculations of the micromagnetic parameters and Landau-Lifshitz-Gilbert simulations. We find that the competition of uniaxial and biaxial magnetocrystalline anisotropies in the film is directly reflected in orientation dependent wall widths, ranging from approximately 40 nm to 120 nm. The domain walls are of the N\'eel type and evolve from near-90∘90^{\circ} walls at low-temperatures to large angle [11ˉ\bar{1}0]-oriented walls and small angle [110]-oriented walls at higher temperatures.Comment: 5 pages, 4 figure

    DC-transport properties of ferromagnetic (Ga,Mn)As semiconductors

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    We study the dc transport properties of (Ga,Mn)As diluted magnetic semiconductors with Mn concentration varying from 1.5% to 8%. Both diagonal and Hall components of the conductivity tensor are strongly sensitive to the magnetic state of these semiconductors. Transport data obtained at low temperatures are discussed theoretically within a model of band-hole quasiparticles with a finite spectral width due to elastic scattering from Mn and compensating defects. The theoretical results are in good agreement with measured anomalous Hall effect and anisotropic longitudinal magnetoresistance data. This quantitative understanding of dc magneto-transport effects in (Ga,Mn)As is unparalleled in itinerant ferromagnetic systems.Comment: 3 pages, 3 figure

    Intrinsic magnetic refrigeration of a single electron transistor

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    In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments

    Complementary spin-Hall and inverse spin-galvanic effect torques in a ferromagnet/semiconductor bilayer.

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    This is the author accepted manuscript. The final version is available from NPG at http://www.nature.com/ncomms/2015/150331/ncomms7730/abs/ncomms7730.html.Recently discovered relativistic spin torques induced by a lateral current at a ferromagnet/paramagnet interface are a candidate spintronic technology for a new generation of electrically controlled magnetic memory devices. The focus of our work is to experimentally disentangle the perceived two model physical mechanisms of the relativistic spin torques, one driven by the spin-Hall effect and the other one by the inverse spin-galvanic effect. Here, we show a vector analysis of the torques in a prepared epitaxial transition-metal ferromagnet/semiconductor-paramagnet single-crystal structure by means of the all-electrical ferromagnetic resonance technique. By choice of our structure in which the semiconductor paramagnet has a Dresselhaus crystal inversion asymmetry, the system is favourable for separating the torques due to the inverse spin-galvanic effect and spin-Hall effect mechanisms into the field-like and antidamping-like components, respectively. Since they contribute to distinct symmetry torque components, the two microscopic mechanisms do not compete but complement each other in our system.The authors acknowledge support from EU European Research Council (ERC) advanced grant no. 268066, from the Ministry of Education of the Czech Republic grant no. LM2011026, from the Grant Agency of the Czech Republic grant no. 14-37427G and the Academy of Sciences of the Czech Republic Praemium Academiae. A.J.F. acknowledges support from a Hitachi research fellowship. H.K. acknowledges financial support from the Japan Science and Technology Agency (JST)
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